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    SOT-89 COMMON ANODE DIODE Search Results

    SOT-89 COMMON ANODE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SOT-89 COMMON ANODE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A


    Original     		PDF BAW56T OT-523F SC-89) SC-89 50BSC 01-Aug-2013

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141WAT1G LM1MA142WAT1G SC-70/SOT-323 OT-323/SC-70 3000/Tape LM1MA141KWA3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed


    Original     		PDF LDAP222T1 SC-89 LDAP222T1 SC-89

    476A diode

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low


    Original     		PDF LDAN222T1 SC-89 476A diode

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G • Pb−Free Package is Available. 3 MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current Peak Forward Surge Current VR IF 70 200 500 Vdc


    Original     		PDF LBAV70LT1G

    TVS Transient Voltage Suppressors

    Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
    Text: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280


    Original     		PDF OT-23 SC-74 SMS05T1 TVS Transient Voltage Suppressors TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S

    diode T3 Marking

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.


    Original     		PDF LM1MA141WKT1G LM1MA142WKT1G SC-70 70/SOTâ LM1MA141WKT1G diode T3 Marking

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode • Pb−Free Package is Available. LBAW56LT1G 1 CATHODE 3 ANODE 2 CATHODE 3 ORDERING INFORMATION Device PACKAGE Shipping 1 LBAW56LT1G SOT-23 3000 Tape & Reel 2 LBAW56LT3G SOT-23 10000 Tape & Reel


    Original     		PDF LBAW56LT1G LBAW56LT1G OT-23 LBAW56LT3G 236AB)

    automatic heat detector project report

    Abstract: transistor equivalent 0107 NA BC237 MIL-STD-750 method 1037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital


    Original     		PDF MBD701 MMBD701LT1 DIODE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 automatic heat detector project report transistor equivalent 0107 NA BC237 MIL-STD-750 method 1037

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MTUFS300600ST6 300A, 600V, Non-Isolated Power Rectifier Module AVAILABILITY: • SOT-227, 4 Lead, Metric screw terminals  Industrial Temp  Mil‐Temp FEATURES:  Non‐Isolated Package  Ultra‐Fast, Rectifier <75ns


    Original     		PDF MTUFS300600ST6 PCRU8060WÂ MTUFS300600ST6Â MTUFS300600ST6

    DECT transmitter siemens

    Abstract: BAR63 BAR63-04 DECT siemens SIEMENS MICROWAVE RADIO 8 GHz 6 GHz SMD PIN diode
    Text: Knut Brenndörfer ● Jörg Lützner Antenna switches with PIN diodes for digital mobile communications In handhelds for digital mobile and cordless telephone systems, such as GSM and DECT, PIN diodes are starting to replace conventional duplex filters in the transmit/receive switch. For this


    Original     		PDF

    Characteristic curve BC107

    Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage


    Original     		PDF BC307 BC307B BC307C BC308C 226AA) BC307, Junc218A MSC1621T1 MSC2404 Characteristic curve BC107 TRANSISTOR 308B BC237 BC108 characteristic

    MPF910 equivalent

    Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C


    Original     		PDF MPF910 MPF910 MFE910 226AE) Max218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPF910 equivalent .model for MPF910 BC237 TRANSISTOR mpf910

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a

    power tmos

    Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
    Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		PDF Aug-2003 power tmos 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    RB110C

    Abstract: diode 1436 DAN202KRVA c1251
    Text: RO H M CORP 07E D | T f i S ñ ' m O D D E S T % ' 4 | tk Variable Capacitance Diodes EVariable Capacitance Diodes Electrical Characteristics Ta=25°C fi I Î I =25ÙC) Vr m VR Tj Tstg (V) (V) t°C) i°C) 1SV205 35 30 120 —3 0-12 0 1SV207 35 30 120 -3 0 -1 2 0


    OCR Scan     		PDF 1SV205 1SV207 RB110C RB4000 DAN212K IN4148 OT-25 DAN404KRVA DAP404KRVA diode 1436 DAN202KRVA c1251

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


    OCR Scan     		PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150

    SOT186A package

    Abstract: Tj-102
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance


    OCR Scan     		PDF PBYR1545CTF, PBYR1545CTX PBYR1545CTF OT186 OT186A SOT186A package Tj-102