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    SOT-89 A Y 8 Search Results

    SOT-89 A Y 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-89 A Y 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2883

    Abstract: 2SC2883-O 2SC2883-Y 2SC2883Y marking GY sot89
    Text: 2SC2883 1.5 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOT-89 Low Voltage. 4 CLASSIFICATION OF hFE 1 2 3 A Product-Rank 2SC2883-O 2SC2883-Y Range


    Original     		PDF 2SC2883 OT-89 2SC2883-O 2SC2883-Y 500mA 14-Jan-2010 2SC2883 2SC2883-O 2SC2883-Y 2SC2883Y marking GY sot89

    KTD1624

    Abstract: mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c
    Text: SEMICONDUCTOR KTD1624 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark Y KTD1624 * Grade A A,B,C Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KTD1624 OT-89 KTD1624 mark A sot-89 MARK Y B Y device marking SOT89 transistor marking transistor marking c

    mark A sot-89

    Abstract: KTC4372 MARK A SOT89 transistor marking
    Text: SEMICONDUCTOR KTC4372 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark A KTC4372 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KTC4372 OT-89 mark A sot-89 KTC4372 MARK A SOT89 transistor marking

    sot89 footprint

    Abstract: GB11 MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1 Advanced RFIC RF transistor SOT-89
    Text: MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi


    Original     		PDF MWS11-GB11-xx OT-89 19dBm OT-89 MWS11GB11-S1 MWS11GB11-G1 MSW11GB11-S89T) MWS11-GB11 sot89 footprint GB11 MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1 Advanced RFIC RF transistor SOT-89

    GB11

    Abstract: MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1
    Text: C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm 5V . The same RFIC will be available later in an advanced Microsemi


    Original     		PDF MWS11-GB11-xx OT-89 19dBm GB11 MSW11GB11-S89T MWS11GB11-G1 MWS11GB11-S1

    device marking code sot23-5

    Abstract: SOT23-5 regulator code 02 LAL sot23-5 LDO Micropower Regulators SOT-89 marking AT sot23-5 sot89 MARKING 3C LAm sot23-5 AYW SOT23 MC78LC33NTRG marking TA sot23-5
    Text: MC78LC00 Series Micropower Voltage Regulator 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5% Industrial Temperature Range of −40°C to 85°C


    Original     		PDF MC78LC00 OT-89, OT-23, OT-89 MC78LC00/D device marking code sot23-5 SOT23-5 regulator code 02 LAL sot23-5 LDO Micropower Regulators SOT-89 marking AT sot23-5 sot89 MARKING 3C LAm sot23-5 AYW SOT23 MC78LC33NTRG marking TA sot23-5

    LM337 sot23-5

    Abstract: NCP584 "network interface cards" NCP585
    Text: CHAPTER 1 Selector Guide http://onsemi.com 8 ON Semiconductor Selector Guide − Analog Integrated Circuits Power Management Linear Voltage Regulators General Purpose Linear Voltage Regulators Fixed Output Voltage Positive Vout 80 mA MC78LCxx 200 mA MC33565


    Original     		PDF MC78LCxx MC78LxxA NCV78LxxA MC33160 MC34160 MC78Mxx/A MC78xx/A NCV78xx MC78Txx/A LM323/A LM337 sot23-5 NCP584 "network interface cards" NCP585

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed


    Original     		PDF LDAP222T1 SC-89 LDAP222T1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage


    Original     		PDF L2SA1774 SC-89

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 z Pb-Free Package is Available. SC-89 !Absolute maximum ratings Ta=25°C Symbol Limits Collector-base voltage VCBO 60 V Collector-emitter voltage


    Original     		PDF L2SC4617 SC-89

    0L sot-89

    Abstract: MC78FC00 MC78FC30HT1 MC78FC50HT1 MC78FCXX MJD32C MC78FC40HT1G 0L 51 sot-89 0k marking sot-89
    Text: MC78FC00 SERIES Micropower Voltage Regulator The MC78FC00 series voltage regulators are specifically designed for use as a power source for video instruments, handheld communication equipment, and battery powered equipment. The MC78FC00 series voltage regulator ICs feature a high accuracy


    Original     		PDF MC78FC00 OT-89 MC78FC00/D 0L sot-89 MC78FC30HT1 MC78FC50HT1 MC78FCXX MJD32C MC78FC40HT1G 0L 51 sot-89 0k marking sot-89

    onsemi DEVICE BK

    Abstract: 10R1 BCX56 BCX56-10R1 sot-89 body marking C 2 L Y
    Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.


    Original     		PDF BCX56-10R1 OT-89 inch/1000 r14525 BCX56 10R1/D onsemi DEVICE BK 10R1 BCX56-10R1 sot-89 body marking C 2 L Y

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value


    Original     		PDF LMBT3906TT1 3000/Tape SC-89

    556 0206

    Abstract: I8355 TO-251 Outline
    Text: Package Information Packaging Diagrams and Parameters for reference only DIP/SKDIP outline dimension (Unit: mil) 300 mil (DIP) Pin Parameter A B C D E F G H I α 8 355~375 240~260 125~135 125~145 16~20 50~70 95~105 295~315 335~375 0°~15° 14/16 745~775


    Original     		PDF

    NTA4153N

    Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
    Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available


    Original     		PDF NTA4153N, NTE4153N SC-75 SC-89 NTA4153N/D NTA4153N NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G

    marking 3EM sot-23

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information LMBTH10LT1G Device Marking Shipping LMBTH10LT1G 3EM 3000/Tape&Reel LMBTH10LT3G 3EM 10000/Tape&Reel 3 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage


    Original     		PDF LMBTH10LT1G 3000/Tape LMBTH10LT3G 10000/Tape marking 3EM sot-23

    top marking c2 sot23-5

    Abstract: Marking C2 SOT23-5 part marking Ht1 q2 marking sot23-5 v32 sot23-5 MC78LC50HT1G marking aaaa sot23-3 Marking 305 SOT23-5 top marking c1 sot23-5 MC78LC50HT1
    Text: MC78LC00 Series Micropower Voltage Regulator Features THIN SOT23−5 NTR SUFFIX CASE 483 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5%


    Original     		PDF MC78LC00 OT23-5 OT-89, OT23-5 top marking c2 sot23-5 Marking C2 SOT23-5 part marking Ht1 q2 marking sot23-5 v32 sot23-5 MC78LC50HT1G marking aaaa sot23-3 Marking 305 SOT23-5 top marking c1 sot23-5 MC78LC50HT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z Pb-Free Package is Available. 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage


    Original     		PDF LMBTH10WT1G SC-70/SOTâ

    S0T89

    Abstract: 05T1 ic MARKING FZ D70G LC584 tfr 586
    Text: SURFACE-MOUNT D71G.05T1 PHP POWER TRANSISTORS -150 VOLTS -50 mAMP, 500 mWATTS Designed for high voltage switching applications. Features: • High voltage: VCEO = - 150V • High transition frequency: fy = 120MHz C A S E ST Y LE SOT-89 • Pd =1 ~ 2W Mounted on ceramic substrate


    OCR Scan     		PDF 120MHz OT-89 250mm2 S0T89 05T1 ic MARKING FZ D70G LC584 tfr 586

    BST60

    Abstract: BST50
    Text: • BST50 BST51 BST52 bbSBTBl 0025b37 T55 H A P X N AMER PHILIPS/DISCRETE b7E D y v N-P-N SILICON PLANAR DARLINGTON TRANSISTORS Silicon n-p-n planar Darlington transistors fo r industrial switching applications, e.g. p rin t hammer, solenoid, relay and lamp driving. Encapsulated in a m icrom iniature SOT-89 envelope.


    OCR Scan     		PDF BST50 BST51 BST52 0025b37 OT-89 BST60, BST60 BST50

    78L05 sot-89

    Abstract: sot-89 78L05 78L05 78l05 sot ELM78L05 ELM78L05CG SOT89 78L05 78L05 SOT89 78L05 L SOT-89
    Text: ELM78L05CG um m ELM78L05 ¿ nan te ® ffi;,fi{ S ^ 0 K ^ -V ^ '> ^ h y ^ > 100mA f t » tfc , H S ?U ^U -^& © T ^ttW S P nnn*0>& < T ;3*.tT „ B E & ® A ffi* ffi;,1 i :100mA • :5V : SOT-89 • AV3> t ^ j t j —y Ilg A^ffiS bB^ Vin fflHSS * ( ^ - ^ s a )*


    OCR Scan     		PDF ELM78L05CG ELM78L05 100mA OT-89 ELM78L05CG-S ELM78L0 ELM78L05CG OT-89 ELM78L05CG) 78L05 sot-89 sot-89 78L05 78L05 78l05 sot ELM78L05 SOT89 78L05 78L05 SOT89 78L05 L SOT-89

    TO-243AB

    Abstract: Schottky Diode SOT-89 E10QS06 E10QS05
    Text: SCHOTTKY BARRIER DIODE E10QS05 E10QS06 1.1A/50— 60V FEA TUR ES ° S i m i l a r to T O - 2 4 3 A B SOT-89 Cas e ° Surface Mount Device “ L o w F o r w a r d V o l t a g e Dro p ° L o w P o w e r Loss, High Efficiency « H i g h Su r g e C a p a b i l i t y


    OCR Scan     		PDF E10QS05 E10QS06 O-243AB OT-89) E10QS05 E10QS06) E10QS0S 15X15mm) bbl5123 TO-243AB Schottky Diode SOT-89 E10QS06

    diode sot-89 marking code

    Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
    Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for


    OCR Scan     		PDF Q62702-A679 Q62702-A680 Q62702-A681 Q62702-A682 Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 pac10 BAW79A diode sot-89 marking code sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF