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    SOT-363 MARKING CODE 0A Search Results

    SOT-363 MARKING CODE 0A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-363 MARKING CODE 0A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT 363 marking 67

    Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1 OT-363 MUN5111DW1T1/D SOT 363 marking 67 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5111DW1T1G

    SOT 363 marking 67

    Abstract: MARKING 67 SOT-363 sot-363 MARKING MUN5136DW1T1
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 OT-363 SOT 363 marking 67 MARKING 67 SOT-363 sot-363 MARKING MUN5136DW1T1

    MUN5111DW1T1

    Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5111DW1T1 OT-363 MUN5111DW1T1/D MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1

    SMUN5113DW1T1G

    Abstract: SMUN5111DW1T1G SOT 363 marking 67 MUN5114DW1T1G
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G OT-363 SC-88 419Bble MUN5111DW1T1/D SMUN5113DW1T1G SOT 363 marking 67 MUN5114DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G OT-363 MUN5111DW1T1/D

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G OT-363 SC-88 419Bble MUN5111DW1T1/D

    SMUN5113DW1T1G

    Abstract: No abstract text available
    Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G SMUN5111DW1T1G MUN5111DW1T1/D SMUN5113DW1T1G

    MUN5111DW1T1G

    Abstract: MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G
    Text: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1G OT-363 MUN5111DW1T1/D MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 DTA114ED/D

    Untitled

    Abstract: No abstract text available
    Text: MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 DTA114ED/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zApplications For switching, for muting. PNP zFeatures 1 A collector current is large.


    Original     		PDF 500mA 250mA 200mA L2SA2030M3T5G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Pb-Free package is available L2SC4083PWT1G 3 COLLECTOR z 3 1 BASE 1 2 EMITTER 2 SC-70/SOT-323 Absolute maximum ratings Ta=25 oC Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage


    Original     		PDF L2SC4083PWT1G SC-70/SOT-323 L2SC4083PWT1G

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor *32V, *0.5A L2SA1036K*LT1G L2SA1036KPLT1G FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. L2SA1036KQLT1G L2SA1036KRLT1G The G.Suffix Denotes a Pb-Free Lead Finish


    Original     		PDF L2SA1036K L2SA1036KPLT1G 500mA L2SA1036KQLT1G L2SA1036KRLT1G L2SA1036KPLT1G L2SA1036KQLT1G OT-23 L2SA1036KRLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1G z Features 1.High transition frequency. Typ.fT=1.5GHz 2.Small rbb`Cc and high gain.(Typ.6ps) 3 3.Small NF. 4. Pb-Free Package is Available. 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


    Original     		PDF L2SC3837LT1G L2SC3837LT1G

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    LRB520S-40T1

    Abstract: LRB520S-40T3G sod523 dimension LESHAN RADIO COMPANY marking code 4 SC-79 SOT-8 marking SC
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-40T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.


    Original     		PDF LRB520S-40T1 SC-79/SOD523) OD523/SC-79 LRB520S-40T1G 3000/Tape LRB520S-40T3G 10000/Tape 330mm 360mm LRB520S-40T1 LRB520S-40T3G sod523 dimension LESHAN RADIO COMPANY marking code 4 SC-79 SOT-8 marking SC

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    lm5z5v6

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators 100 mW SOD–523 Surface Mount 1 ORDERING INFORMATION Device LM5Z2V4T1 SERIES Package Shipping LM5ZxxxT1 SOD-523 3000/Tape&Reel LM5ZxxxT3 SOD-523 10000/Tape&Reel This series of Zener diodes is packaged in a SOD–523 surface mount package that


    Original     		PDF OD-523 3000/Tape 10000/Tape lm5z5v6

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available


    Original     		PDF LRB411DLT1G OT-23)

    CQ 523

    Abstract: MARKING CODE cq sot-89
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping


    Original     		PDF L2SC2411KXLT1G L2SA1036K 236AB) L2SC2411KPLT1G 3000/Tape L2SC2411KPLT3G 10000/Tape L2SC2411KQLT1G L2SC2411KQLT3G CQ 523 MARKING CODE cq sot-89