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    SOT-363 MARKING 20 Search Results

    SOT-363 MARKING 20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-363 MARKING 20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


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    2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT PDF

    MARKING KE2

    Abstract: No abstract text available
    Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2


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    MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, DS31039 MARKING KE2 PDF

    MMBZ5221BS

    Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
    Text: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A A1 KXX Mechanical Data • · · · · C1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2


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    MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, MMBZ5257BS MMBZ5258BS DS31039 MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 TRANSISTOR NPN+PNP SOT-363 FEATURE Epitaxial planar die construction One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27


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    OT-363 MMDT2227 OT-363 -500mA -150mA, -15mA -500mA, PDF

    BAS16TW

    Abstract: MMBD4148TW marking KA2 sot 363
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAS16TW/MMBD4148TW SOT-363 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: BAS16TW KA2• MMBD4148TW KA2


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    OT-363 BAS16TW/MMBD4148TW OT-363 BAS16TW MMBD4148TW 150mA MMBD4148TW marking KA2 sot 363 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR545J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2202 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR545J Package Code OHO SOT-363


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    SUR545J SRA2202 OT-363 OT-363 KST-6020-000 -10mA -10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR540J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1204 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR540J Package Code H8H SOT-363


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    SUR540J SRC1204 OT-363 OT-363 KST-6016-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR539J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1203 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR539J Package Code HOH SOT-363


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    SUR539J SRC1203 OT-363 OT-363 KST-6015-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR544J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2205 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR544J Package Code IHI SOT-363


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    SUR544J SRA2205 OT-363 OT-363 KST-6019-000 -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR489J Semiconductor Epitaxial Planar type NPN Silicon Transistor Descriptions • Digital transistor Features • Two SRC1204 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR489J Package Code 9X SOT-363


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    SUR489J SRC1204 OT-363 OT-363 KST-6007-001 PDF

    SD103ATW

    Abstract: diode reverse voltage protection
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SD103ATW SOT-363 SCHOTTKY DIODE FEATURES Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z Fast switching z Low leakage current z MARKING: KLL


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    OT-363 SD103ATW OT-363 t10ms 100mA 200mA SD103ATW diode reverse voltage protection PDF

    Silicon NPN Epitaxial Planar Type

    Abstract: SRC1202 SUR490J kst60 51R-2
    Text: SUR490J Semiconductor Epitaxial Planar type NPN Silicon Transistor Descriptions • Digital transistor Features • Two SRC1202 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR490J Package Code OO SOT-363


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    SUR490J SRC1202 OT-363 OT-363 KST-6008-001 Silicon NPN Epitaxial Planar Type SUR490J kst60 51R-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR538J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1205 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR538J Package Code HIH SOT-363


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    SUR538J SRC1205 OT-363 OT-363 KST-6014-000 -10mA PDF

    SRC1207

    Abstract: SUR543J kst60
    Text: SUR543J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR543J Package Code HSH SOT-363


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    SUR543J SRC1207 OT-363 OT-363 KST-6036-000 SUR543J kst60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR547J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2204 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR547J Package Code XHX SOT-363


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    SUR547J SRA2204 OT-363 OT-363 KST-6022-000 -10mA -10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR546J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2203 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR546J Package Code 8H8 SOT-363


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    SUR546J SRA2203 OT-363 OT-363 KST-6021-000 -10mA -10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-363 BC847S OT-363 100mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMG5N dual digital transistors PNP+PNP SOT-363 FEATURES z Two DTA114Y chips in a package Marking: G5 1 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol


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    OT-363 OT-363 DTA114Y 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz 200Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR550J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2207chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR550J Package Code XIX SOT-363 Outline Dimensions


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    SUR550J SRA2207chips OT-363 OT-363 KST-6025-000 -10mA -10mA, PDF

    SRC1207

    Abstract: SUR519J kst60
    Text: SUR519J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. Marking SUR519J Package Code S SOT-363 Outline Dimensions


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    SUR519J SRC1207 OT-363 OT-363 KST-6012-001 SUR519J kst60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUR519J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. SUR519J Marking S Package Code SOT-363 Outline Dimensions


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    SUR519J SRC1207 OT-363 OT-363 KST-6012-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SOT-363 BAS16TW/MMBD4148TW SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 6 5 4 1 2 3 MARKING: BAS16TW KA2• MMBD4148TW KA2


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    OT-363 OT-363 BAS16TW/MMBD4148TW BAS16TW MMBD4148TW 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-363 BC847S OT-363 100mA 100MHz PDF