SOT-353
Abstract: marking 3U RB481K VF SOT353
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB481K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-353
RB481K
CharactT-353
100mA
200mA
SOT-353
marking 3U
RB481K
VF SOT353
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SOT-353
Abstract: marking 3t RB480K
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB480K SCHOTTLKY BARRIER DIODE FEATURES z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-353
RB480K
100mA
SOT-353
marking 3t
RB480K
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UML2N Isolated transistor and diodes SOT-353 Features z The 2SC2412K and a diodes are housed independently In a package 1 MARKING：L2 TR MAXIMUM RATINGS Ta=25℃ unless otherwise noted
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OT-353
OT-353
2SC2412K
to150
100MHz
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Diodes SOT-353 RB481K SCHOTTLKY BARRIER DIODE 5 FEATURES z Low current rectification z High reliability 1 4 2 3 MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
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OT-353
OT-353
RB481K
100mA
200mA
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SDS914
Abstract: SUD493Z DX SOT
Text: SUD493Z Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking
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SUD493Z
SDS914
OT-353
OT-343
SUD493Z
DX SOT
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Untitled
Abstract: No abstract text available
Text: SUD493Z Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking
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SUD493Z
SDS914
OT-353
SUD493Z
OT-343
KSD-D5Q001-000
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SOT-353
Abstract: diode marking x6 ic 353 datasheet SDS914 SUD492H ksd50 sot-353 marking X6
Text: SUD492H Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Three SDS914 chips in SOT-353 package Ordering Information Type NO. Marking
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SUD492H
SDS914
OT-353
OT-353
KSD-5001-001
100mA
SOT-353
diode marking x6
ic 353 datasheet
SUD492H
ksd50
sot-353 marking X6
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sot-353 marking X6
Abstract: No abstract text available
Text: SUD492H Semiconductor Silicon epitaxial planar Diode Features • • • • Ultra high speed Fast reverse recovery time : trr=1.6ns Typ. Small total capacitance : CT=2.2pF(Typ.) Four SDS914 chips in SOT-353 package Ordering Information Type NO. Marking
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SUD492H
SDS914
OT-353
SUD492H
OT-353
KSD-5001-001
sot-353 marking X6
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marking 3t
Abstract: No abstract text available
Text: SCS480N VOLTAGE 45 V, 1 A Small Signal Schottky Plastic-Encapsulate Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES ♦ ♦ A E L Low current rectification High reliability B MARKING
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SCS480N
OT-353
17-Nov-2009
100mA
marking 3t
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SCS481N
Abstract: marking 3U
Text: SCS481N VOLTAGE 30 V, 0.2 A Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 A E L FEATURES ♦ ♦ B Low Current Rectification High Reliability C 4 C 5 F H DG K REF. MARKING:3U
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SCS481N
OT-353
100mA
200mA
17-Nov-2009
SCS481N
marking 3U
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DLD601/D
Mar-2001
r14525
DLD601
ON Semiconductor marking
fairchild marking codes sot-23
W2D SOT23
diode w2d
SOT-353 MARKING L5
marking code vk, sot-363
va sot-353
1C SOT353
MC74VHC1G135
vsop8 package outline
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marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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MC74VHC1GT50
V = Device Code
GATE MARKING CODE VX SOT23
AND8004
AND8004/D
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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MC74HC1G14
MC74HC
353/SC
diode Marking code v3
sot 23-5 marking code H5
V = Device Code
marking H5 sot 23-5
Wafer Fab Plant Codes ST
fairchild mos
xaa64
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V = Device Code
Abstract: No abstract text available
Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G02
353/SC
V = Device Code
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V = Device Code
Abstract: MC74VHC1G00
Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G00
353/SC
V = Device Code
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V = Device Code
Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G86
353/SC
V = Device Code
vsop8 package outline
Wafer Fab Plant Codes ST
14XXX
T138A
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V = Device Code
Abstract: diode T132
Text: MC74VHC1GU04 Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1GU04
MC74VHCU04
MC74VHC1G04
MC74VHC04
V = Device Code
diode T132
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torex new marking
Abstract: TOSHIBA el suffix V = Device Code
Text: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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MC74VHC1G03
torex new marking
TOSHIBA el suffix
V = Device Code
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ON Semiconductor marking
Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1GT02
ON Semiconductor marking
marking code v6 29 DIODE
V = Device Code
diode Marking code v3
marking t08
TOSHIBA el suffix
Wafer Fab Plant Codes ST
t02 y95
H2 sc88a
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 SOT-353 MARKING w5 date code marking toshiba Nand M2 MARKING SOT23 MARKING W2 SOT23 sot353 vk sot-353 cf sot-353 on semi marking code sot T138-A
Text: MC74VHC1GT00 2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1GT00
ON Semiconductor marking
fairchild marking codes sot-23
SOT-353 MARKING w5
date code marking toshiba Nand
M2 MARKING SOT23
MARKING W2 SOT23 sot353
vk sot-353
cf sot-353
on semi marking code sot
T138-A
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ON Semiconductor marking
Abstract: marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode
Text: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
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MC74VHC1GT86
ON Semiconductor marking
marking VU sot363
V = Device Code
SOT23 "Marking Code" t04
ON TSOP6 MARKING 6L
marking 62 ON Semi
VM MARKING CODE SOT353
marking code V6 diode
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SOT-353 MARKING VL
Abstract: No abstract text available
Text: MC74VHC1G125 Noninverting 3-State Buffer The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G125
SOT-353 MARKING VL
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