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    SOT-323 MARKING CODE A2 Search Results

    SOT-323 MARKING CODE A2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-323 MARKING CODE A2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-A1031

    Abstract: marking code AC sot 323 diode
    Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage


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    PDF Q62702-A1031 OT-323 Nov-28-1996 Q62702-A1031 marking code AC sot 323 diode

    A1030 transistor

    Abstract: Q62702-A1030 marking code a4s
    Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage


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    PDF Q62702-A1030 OT-323 Nov-28-1996 A1030 transistor Q62702-A1030 marking code a4s

    Q62702-A1051

    Abstract: A7S marking code A1051 Q62702A1051
    Text: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage


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    PDF Q62702-A1051 OT-323 Apr-03-1997 Q62702-A1051 A7S marking code A1051 Q62702A1051

    marking code 68W

    Abstract: 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W
    Text: BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type Marking Ordering Code Pin Configuration Package BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323


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    PDF 8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W

    MUN5214T1

    Abstract: MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1

    BC846

    Abstract: BC846A BC846B BC847 BC847A BC847B BC848 BC848A
    Text: BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.


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    PDF BC846, BC847, BC848 SC-70/SOT-323 BC846 BC847 BC846 BC846A BC846B BC847 BC847A BC847B BC848 BC848A

    BC847

    Abstract: A1 MARKING SC-70 BC846 BC846A BC846B BC847A BC847B BC848 BC848A BC847BWT1G
    Text: BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.


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    PDF BC846, BC847, BC848 SC-70/SOT-323 BC846 BC847 BC847 A1 MARKING SC-70 BC846 BC846A BC846B BC847A BC847B BC848 BC848A BC847BWT1G

    BC847BWT1G

    Abstract: BC848BWT1G BC846 BC846A BC846AWT1 BC847 BC847A BC847AWT1 BC848 BC848AWT1
    Text: BC846AWT1, BC847AWT1, BC848AWT1 Series General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications.


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    PDF BC846AWT1, BC847AWT1, BC848AWT1 SC-70/SOT-323 BC846 BC847 BC848 BC847BWT1G BC848BWT1G BC846 BC846A BC846AWT1 BC847 BC847A BC847AWT1 BC848

    LMUN5113T1G

    Abstract: LMUN5111T1G LMUN51xxT1G LMUN5112T1G LMUN5113T1 LMUN5114T1G LMUN5112
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN51xxT1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF LMUN51xxT1G 70/SOT LMUN5113T1G LMUN5111T1G LMUN51xxT1G LMUN5112T1G LMUN5113T1 LMUN5114T1G LMUN5112

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF LMUN5111T1G 70/SOTâ

    LMUN5113T1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G Series PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF LMUN5111T1G 70/SOTâ LMUN5113T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF LMUN5111T1G 70/SOTâ

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN5111T1G Series S-LMUN5111T1G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF LMUN5111T1G S-LMUN5111T1G 70/SOTâ

    LMBD2835LT1

    Abstract: LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G Diode A3X
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE • Pb-Free Package is available. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G A3X 10000/Tape&Reel LMBD2836LT1G A2X 3000/Tape&Reel


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    PDF LMBD2835LT1G LMBD2836LT1G 3000/Tape LMBD2835LT3G 10000/Tape LMBD2836LT3G LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G Diode A3X

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current


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    PDF LBAW56WT1G 3000/Tape LBAW56WT3G 10000/Tape

    SOt323 marking code 6X

    Abstract: MUN5111T1 MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G
    Text: MUN5111T1 Series Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


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    PDF MUN5111T1 SC-70/SOT-323 MUN5111T1/D SOt323 marking code 6X MUN5111T1G MUN5112T1 MUN5112T1G MUN5113T1 MUN5113T1G MUN5113T3 MUN5113T3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount


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    PDF LMBT2222AWT1G 323/SCâ

    Untitled

    Abstract: No abstract text available
    Text: MUN5211T1G Series, SMUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original
    PDF MUN5211T1G SMUN5211T1G 70/SOTâ MUN5211T1/D

    diode a4s

    Abstract: marking code fs 1 sot 323 A4s diode
    Text: SIEMENS BAV 70W Silicon Switching Diode Array •For high speed switching applications ■Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 =A1 Q62702-A1030 2 = A2 Package 3 = C1/CÍ SOT-323 Maximum Ratings per Diode Parameter Symbol


    OCR Scan
    PDF Q62702-A1030 OT-323 40mmm diode a4s marking code fs 1 sot 323 A4s diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode num m Type Marking Ordering Code Pin Configuration BAW 56W A1s Q62702-A1031 1 =C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Symbol Parameter


    OCR Scan
    PDF Q62702-A1031 OT-323 H35bQS S53Sb05

    a7s diode

    Abstract: bav99w diode marking 355
    Text: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter


    OCR Scan
    PDF Q62702-A1051 OT-323 40mmm a7s diode bav99w diode marking 355

    A1S diode

    Abstract: Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s
    Text: SIEMENS BAW 56W Silicon Switching Diode Array •For high speed switching applications ■Common anode k l/A i m TJ U Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter


    OCR Scan
    PDF Q62702-A1031 OT-323 40mmm A1S diode Marking code jxs JXs sot marking code a1s marking 7S marking code AC sot 323 diode diode a1s

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol


    OCR Scan
    PDF Q62702-A1051 OT-323 23SL05 0235b05 D15D412 D1ED413

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor


    OCR Scan
    PDF Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b?