SOT-26 A11
Abstract: TSM2611ED
Text: TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 Features ID (A) 20 @ VGS = 4.5V 6 28 @ VGS = 2.5V 5 Block Diagram ● Advance Trench Process Technology
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TSM2611ED
OT-26
TSM2611EDCX6
SOT-26 A11
TSM2611ED
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heds 5310
Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G00
MC74HC
353/SC
AND8004/D
V = Device Code
date code marking toshiba Nand
PIN DIODE MARKING CODE wk
marking sbn
h1d marking
AND8004
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T138A
Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1GU04
MC74HC
353/SC
T138A
U04 fairchild
Wafer Fab Plant Codes ST
PIN DIODE MARKING CODE wk
U04 fairchild MARKING
ALPHA NEW YEAR DATE CODE
DIODE M7 SMP
marking code vhc
V = Device Code
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MC74HC
Abstract: marking t132 marking code V6 diode V = Device Code
Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G04
MC74HC
353/SC
marking t132
marking code V6 diode
V = Device Code
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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SC59-5
Abstract: No abstract text available
Text: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V
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MC74HC1GU04
MC74HC
SC70-5/SC-88A/SOT-353
OT23-5/TSOP-5/SC59-5
70-5/SC-88A/
OT-353
SC70-5/SC-88A/
OT-353
SC59-5
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H2D MARKING CODE
Abstract: H2D Marking h2d diode H2D SOT23
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
MC74HC1G08DFT1
MC74HC1G08DFT2
MC74HC1G08DTT1
H2D MARKING CODE
H2D Marking
h2d diode
H2D SOT23
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ON Semiconductor marking
Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1GT02
ON Semiconductor marking
marking code v6 29 DIODE
V = Device Code
diode Marking code v3
marking t08
TOSHIBA el suffix
Wafer Fab Plant Codes ST
t02 y95
H2 sc88a
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Untitled
Abstract: No abstract text available
Text: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V
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MC74HC1GU04
MC74HC
5/SC59
MC74HC1GU04DFT1
MC74HC1GU04DFT2
MC74HC1GU04DTT1
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U04 marking U04
Abstract: No abstract text available
Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1GU04
MC74HC
353/SC
r14525
MC74HC1GU04/D
U04 marking U04
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DIODE MARKING CODE G SOT23
Abstract: Marking Code .25c sot23 SOt23-5 footprint wave soldering 3.GND SOT-23 marking code 10 sot23 A114 A115 JESD22 MC74HC MC74HC1G32
Text: MC74HC1G32 Single 2−Input OR Gate The MC74HC1G32 is a high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G32
MC74HC1G32
MC74HC
SC-88At
MC74HC1G32/D
DIODE MARKING CODE G SOT23
Marking Code .25c sot23
SOt23-5 footprint wave soldering
3.GND SOT-23
marking code 10 sot23
A114
A115
JESD22
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431 SOT23-5
Abstract: marking code t2 sot23-5 vh marking sc70 2.gND 4.out sot23-5 MC74HC1G14
Text: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G14
MC74HC
SC70-5/SC-88A/SOT-353
SC70-5/SC-88A/
OT-353
OT-353
431 SOT23-5
marking code t2 sot23-5
vh marking sc70
2.gND 4.out sot23-5
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Untitled
Abstract: No abstract text available
Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G04
MC74HC
353/SC
r14525
MC74HC1G04/D
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NLV74HC1G08DTT1G
Abstract: marking h2 SOT353 NLV74HC1G08DFT2G SOT23-5 marking H2
Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G08
MC74HC
SC-88A
OT-353
SC-70
MC74HC1G08/D
NLV74HC1G08DTT1G
marking h2 SOT353
NLV74HC1G08DFT2G
SOT23-5 marking H2
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marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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MC74VHC1GT50
V = Device Code
GATE MARKING CODE VX SOT23
AND8004
AND8004/D
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGD804 CATV amplifier module Product specification Supersedes data of 1997 Mar 25 Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Product specification CATV amplifier module FEATURES BGD804 PINNING - SOT 115J
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OCR Scan
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BGD804
BGD804
SCA63
125008/00/02/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGY585A CATV amplifier module Product specification Supersedes data of 1997 Apr 14 Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Product specification CATV amplifier module FEATURES BGY585A PINNING - SOT 115 J
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OCR Scan
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BGY585A
BGY585A
SCA63
25008/00/03/pp8
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DIN45004B
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGY84; BGY85 CATV amplifier modules Product specification Supersedes data of 1999 Mar 22 Philips Semiconductors 1999 Mar 26 PHILIPS PHILIPS Philips Semiconductors Product specification CATV amplifier modules FEATURES BGY84; BGY85 PINNING - SOT 115 J
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OCR Scan
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BGY84;
BGY85
BGY84
SCA63
25008/00/04/pp8
DIN45004B
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p80c652ifp
Abstract: A11P p2U marking S87C652 p80c652
Text: Phlips Semiconductors Product spécification CMOS single-chip 8-bit microcontrollers PIN CONFIGURATIONS DESCRIPTION The P80C652/83C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The
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80C652/83C652
P80C652/83C652
80C51
80C652/83C652
80C51.
83C652
80C652
87C652
8XC652
p80c652ifp
A11P
p2U marking
S87C652
p80c652
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P83C652FFPN
Abstract: P80C652FBAA ADO part marking
Text: Philips S em iconductors P ro du ct specification C M O S single-chip 8-bit microcontroller DESCRIPTION PIN CONFIGURATION The device also functions as an arithmetic processor having facilities for both binary and BCD arithmetic plus bit-handling capabilities.
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87C652
87C652
80C51
80C51.
16-bit
80C51)
P83C652FFPN
P80C652FBAA
ADO part marking
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