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    SOT-25 U3 Search Results

    SOT-25 U3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-25 U3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-25

    Abstract: No abstract text available
    Text: 管理計画 SOT-25 CONTROL PLAN (SOT-25) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ


    Original     		PDF OT-25) SOT-25

    "Voltage Detector"

    Abstract: Voltage Detectors sot-25 XC612
    Text: 2. Voltage Detectors ● XC612 Series 2 Channel Voltage Detectors General Description DETAILS Features The XC612 series consist of 2 voltage detectors in 1 minimolded, SOT-25 package.


    Original     		PDF XC612 OT-25 OT-25 XC612× "Voltage Detector" Voltage Detectors sot-25

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    Dual pnp Dual npn Transistor

    Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
    Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3550 OT-23 Dual pnp Dual npn Transistor n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL

    k45 diode

    Abstract: marking e1 diode DIODE marking A2 transistor k43 marking K45 sot323 A1 marking diode diode k44 Marking k45 BAS40W BAS40W-04
    Text: SOT-323 Plastic-Encapsulate DIODE ＳＯＴ－３２３ SCHOTTKY DIODE 1.BASE 2.EMITTER FEATURES 3.COLLECTOR BAS40W-04 Marking:44.K44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter １．０１ ＲＥＦ Power dissipation PD : 200 mW（Tamb=25℃）


    Original     		PDF OT-323 BAS40W-04 BAS40W BAS40W-05 525REF 026TYP 650TYP k45 diode marking e1 diode DIODE marking A2 transistor k43 marking K45 sot323 A1 marking diode diode k44 Marking k45

    SC-82AB

    Abstract: SC82AB
    Text: 梱包 MITSUMI 梱包 梱包形態一覧 各パッケージの梱包形態を下表に示します。 パッケージタイプ TO-92 SOP SSOP VSOP TSOP MMP SOT-25 SOT-26 SC-82AB QFP （3）A 7A 8A 8B 8C 8D 8E 14A 14B 16A 16B 18A 20B 22A 24A 28A 28B 16A 20A


    Original     		PDF OT-25 OT-26 SC-82AB SC-82AB SC82AB

    Untitled

    Abstract: No abstract text available
    Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS64 OT-23

    SOT23 MARK u3

    Abstract: BF242
    Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS64 OT-23 SOT23 MARK u3 BF242

    BSS64

    Abstract: 01BV CJE SOT-23
    Text: BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS64 OT-23 BSS64 01BV CJE SOT-23

    5252B

    Abstract: MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B
    Text: MMBZ5221B~5252B SEMICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L 3 G H A 2 D ・Small Package : SOT-23. 1 MAXIMUM RATING Ta=25℃ UNIT PD* 300


    Original     		PDF MMBZ5221B 5252B OT-23. MMBZ5252B MMBZ5251B MMBZ5250B MMBZ5248B MMBZ5245B MMBZ5246B MMBZ5242B 5252B MARK 8E diode zener 8w L MMBZ5227B 8B MMBZ5250B Zener diode 81A MARK 8F MMBZ5251B MARKING 8F MMBZ5231B MMBZ5222B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR（PNP ） ＳＯＴ－８９ FEATURES Power dissipation PCM : 0.5 W （Tamb=25℃） Collector current ICM: -2 A Collector-base voltage V BR CBO : -50


    Original     		PDF OT-89 2SA1213 OT-89-3L 500TYP 060TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 1.35 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -32


    Original     		PDF OT-89 BC869 100MHz BC869 BC869-16 BC869-25 OT-89-3L 500TYP 060TYP

    H9 sot 23

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BAS21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES E B L L ・High Reliability. D ・Small surface mounting type SOT-23 . H MAXIMUM RATING (Ta=25℃) 1 Q VRM 300 V Reverse Voltage VR 250 V Continuous Forward Current


    Original     		PDF OT-23) BAS21 150mA H9 sot 23

    MMBZ5239B

    Abstract: 712 DIODE marking sot23 MMBZ5245B 5252B
    Text: SEMICONDUCTOR MMBZ5221B~5252B TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. E B L L FEATURES D ・Small Package : SOT-23. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Q P D* 300 mW


    Original     		PDF MMBZ5221B 5252B OT-23. MMBZ5221B MMBZ5235B MMBZ5242B MMBZ5245B MMBZ5246B MMBZ5248B MMBZ5250B MMBZ5239B 712 DIODE marking sot23 5252B

    BAV23S

    Abstract: VR104
    Text: SEMICONDUCTOR BAV23S TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・High Reliability. E B L L 3 H G A 2 D ・Small surface mounting type SOT-23 . 1 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V


    Original     		PDF BAV23S OT-23) BAV23S VR104

    H9 sot 23

    Abstract: BAS21
    Text: SEMICONDUCTOR BAS21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ・High Reliability. E B L L 3 H G A 2 D ・Small surface mounting type SOT-23 . 1 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V


    Original     		PDF BAS21 OT-23) H9 sot 23 BAS21

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR（ PNP ） ＳＯＴ－２３－３ Ｌ FEATURES １．ＢＡＳＥ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.7


    Original     		PDF OT-23-3L 2SB624 037TPY 950TPY 700REF 028REF

    CMSD2004S

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Diode CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage


    Original     		PDF OT-23-3L CMSD2004S 037TPY 950TPY 700REF 028REF CMSD2004S

    marking code l sot-25 step-up

    Abstract: marking code lx sot CD54 MA737 MBRM110L UC3500L UC3500
    Text: UNISONIC TECHNOLOGIES CO., LTD UC3500 CMOS IC HIGH EFFICIENCY VFM CONTROLLED STEP-UP DC/DC CONVERTER 3 2 1 5 4 SOT-25 APPLICATIONS * Cellular telephones * PDA and hand held instruments * Palmtop and notebook computer * Portable equipment * Battery powered equipment


    Original     		PDF UC3500 OT-25 OT-89 UC3500 UC3500L QW-R502-072 marking code l sot-25 step-up marking code lx sot CD54 MA737 MBRM110L UC3500L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4448W ＳＯＴ－３２３ SWITCHING DIODE FEATURES １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IO: 250 mA Collector-base voltage


    Original     		PDF OT-323 MMBD4448W 150mA 525REF 026TYP 650TYP 021REF

    Diode SOT-23 marking J

    Abstract: marking t marking 43 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40LT1 MA MARKING SOT23 MV MARKING SOT23
    Text: BAS40LT1 SCHOTTKY DIODE Features Power dissipation 。 P D : 200 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. + BAS40 Marking:43 -


    Original     		PDF BAS40LT1 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 100mA 200mA Diode SOT-23 marking J marking t marking 43 BAS40LT1 MA MARKING SOT23 MV MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAT54W/AW/CW/SW ＳＯＴ－３２３ SCHOTTKY DIODE FEATURES １．０１ ＲＥＦ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF: 200 mA


    Original     		PDF OT-323 BAT54W/AW/CW/SW BAT54W BAT54AW 525REF 026TYP 650TYP 021REF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAV70W ＳＯＴ－３２３ SWITCHING DIODE FEATURES １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current


    Original     		PDF OT-323 BAV70W 525REF 026TYP 650TYP 021REF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode RB706F-40 ＳＯＴ－３２３ SCHOTTKY BARRIER DIODE FEATURES: １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃）


    Original     		PDF OT-323 RB706F-40 525REF 026TYP 650TYP 021REF