equivalent components of diode ak 03
Abstract: No abstract text available
Text: Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS-285L/P HSMS-286L/P/R Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz
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OT-363
SC-70,
HSMS-285L/P
HSMS-286L/P/R
5966-2032E
equivalent components of diode ak 03
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MMBF4416
Abstract: FAIRCHILD SOT-23 MARK 30 RF Amplifiers rf fairchild transistor 100mhz rf fairchild transistor 100mhz amplifier
Text: MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage
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MMBF4416
OT-23
150lete
MMBF4416
FAIRCHILD SOT-23 MARK 30
RF Amplifiers
rf fairchild transistor 100mhz
rf fairchild transistor 100mhz amplifier
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UPC2757T
Abstract: UPC2757TB UPC2757TB-E3-A UPC2758TB UPC2758TB-E3-A
Text: 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES UPC2757TB UPC2758TB CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package VCC = 3 V, LO Power = -5 dBm RF Above LO 200 MHz IF Conversion Gain dB • WIDEBAND OPERATION:
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UPC2757TB
UPC2758TB
OT-363
UPC2757TB
UPC2758TB
UPC2757T
UPC2757TB-E3-A
UPC2758TB-E3-A
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150J10
Abstract: 7011 NPN TRANSISTOR
Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm
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NE662M04
OT-343
NE662M04
150J10
7011 NPN TRANSISTOR
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MJE 15024
Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm
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NE662M04
OT-343
NE662M04
NE662M0anty
MJE 15024
BF111
2SC5508
NE662M04-T2
NE662M04-T2-A
S21E
TRANSISTOR 9642
IC AT 6884
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UPC2749T
Abstract: UPC2749TB UPC2749TB-E3-A
Text: 3 V, SUPER MINIMOLD UPC2749TB 1900 MHz SI RFIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package 25 VCC = 3.0 V • GAIN: 16 dB TYP 20 • NOISE FIGURE: 4.0 dB TYP DESCRIPTION NEC's UPC2749TB is a Silicon RF Integrated Circuit which is
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UPC2749TB
OT-363
UPC2749TB
UPC2749T,
OT-363
UPC2749T
UPC2749TB-E3-A
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DD01-73
Abstract: DC16-73 DD01 sot-6
Text: Preliminary Directional Detector DD01-73 Features • Low Cost SO T-6 ■ Low Profile SOT -6 ■ Small SOT-6 Package ■ Tape & Reel SOT -6 -6 SOT Description The DD01-73 is a 50 Ω, directional coupler/Schottky diode combination. The integrated directional coupler is
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DD01-73
DD01-73
DC16-73.
9/99A
DC16-73
DD01
sot-6
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marking 34 sot-363 rf
Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-2865
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
marking 34 sot-363 rf
HSMS-286x Series
Detector Schottky Diodes at 915MHZ
sot-23 MARKING CODE ZZ
AVAGO DATE CODE MARKING
sot 23 marking code T2
SOT 363 marking CODE T4
T4 marking sot-323
286E
HSMS-2865
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surface mount limiter diodes
Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-286P
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
surface mount limiter diodes
marking 34 sot-363 rf
HSMS-286K
HSMS-286P
286E
HSMS-286B date code A
DIODE MARKING CODE T4
marking code tc sot 363
MARKING T2 SOT323
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DIODE MARKING CODE A1
Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-286F
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
DIODE MARKING CODE A1
RFID 5.8Ghz
HSMS286F
marking code e1 DIODE
286E
HSMS-286K
package marking
AVAGO DATE CODE MARKING
sc70-3 PCB PAD
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5rd marking
Abstract: No abstract text available
Text: NSR15ADXV6T1, NSR15ADXV6T5 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. http://onsemi.com Features • • • • Low Capacitance <1.0 pF Low VF (390 mV Typical @ 1.0 mA)
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NSR15ADXV6T1,
NSR15ADXV6T5
5rd marking
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SOT-563 rf power detection
Abstract: NSR15ADXV6T1 NSR15ADXV6T5 vfd B DELTA 5rd marking
Text: NSR15ADXV6T1, NSR15ADXV6T5 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. http://onsemi.com Features • • • • Low Capacitance <1.0 pF Low VF (390 mV Typical @ 1.0 mA)
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NSR15ADXV6T1,
NSR15ADXV6T5
NSR15ADXV6T1/D
SOT-563 rf power detection
NSR15ADXV6T1
NSR15ADXV6T5
vfd B DELTA
5rd marking
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marking 301 sot-23
Abstract: 301 marking code sot-23 MBD301G MMBD301LT1G marking 4T sot-23 MBD301 MMBD301 MMBD301LT1 MMBD301LT3 MMBD301LT3G
Text: MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an
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MBD301,
MMBD301LT1
MMBD301
MBD301RS
marking 301 sot-23
301 marking code sot-23
MBD301G
MMBD301LT1G
marking 4T sot-23
MBD301
MMBD301
MMBD301LT1
MMBD301LT3
MMBD301LT3G
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MBD701G
Abstract: MMBD701LT1 MMBD701LT1G MMBD701LT3 MMBD701LT3G MBD701
Text: MBD701, MMBD701LT1 Preferred Device Silicon Hot−Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an
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MBD701,
MMBD701LT1
MBD701G
MMBD701LT1
MMBD701LT1G
MMBD701LT3
MMBD701LT3G
MBD701
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MBD701 MMBD701LT1 Silicon Hot-Carrier Diodes Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other
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MBD701
MMBD701LT1
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709 SOT23
Abstract: marking 4T sot-23
Text: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other
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MBD301
MMBD301LT1
MBD301,
MMBD301
709 SOT23
marking 4T sot-23
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4T SOT23
Abstract: No abstract text available
Text: ON Semiconductort MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other
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MBD301
MMBD301LT1
MBD301,
MMBD301
MMBD301LT1
OT-23
O-236)
MMBD301LT3
4T SOT23
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AV02-1377EN
Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin <-20 dBm applications at frequencies below
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HSMS-285x
OT-23/SOT143
HSMS-282x
HSMS-286x
HSMS-285x
OT-323
SC70-3
OT-363
SC70-6
AV02-1377EN
HSMS-285C
S11 SCHOTTKY diode
285L
A004R
AN1124
HSMP4
ir 0022
avago marking j
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Untitled
Abstract: No abstract text available
Text: MBD701, MMBD701L, SMMBD701L Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes http://onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an
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MBD701,
MMBD701L,
SMMBD701L
MBD701/D
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SMMBD701LT1G
Abstract: No abstract text available
Text: MBD701, MMBD701L, SMMBD701L Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes http://onsemi.com These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an
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MBD701,
MMBD701L,
SMMBD701L
MBD701/D
SMMBD701LT1G
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S11 SCHOTTKY diode
Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin <-20 dBm applications at frequencies below
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HSMS-285x
OT-23/SOT143
HSMS-282x
HSMS-286x
HSMS-285x
OT-323
SC70-3
OT-363
SC70-6
S11 SCHOTTKY diode
zero bias diode
AV02-1377EN
285L
HSMS-285C
AVAGO DATE CODE MARKING
A004R
AN1124
all silicon metal rectifier diode product List
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MMBD452LT1
Abstract: No abstract text available
Text: ON Semiconductort Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an
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MMBD452LT1
r14525
MMBD452LT1/D
MMBD452LT1
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MMBD452LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD452LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot-Carrier Diodes MMBD452LT1 Schottky Barrier Diodes Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital
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MMBD452LT1/D
MMBD452LT1
236AB)
MMBD452LT1
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Untitled
Abstract: No abstract text available
Text: W hü1 H E W L E T T mLttM P A C K A R D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/nW at 915 MHz Up to 35 mV/nW at 2.45 GHz Up to 25 mV/nW at 5.80 GHz
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OCR Scan
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OT-363
SC-70,
285L/P
286L/P/R
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