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    SOT-23-6 MARKING 31 Search Results

    SOT-23-6 MARKING 31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23-6 MARKING 31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CS3121

    Abstract: No abstract text available
    Text: CS3121 Revision History Rev. No. History Issue Date 1.0 New issue Sep. 10,2012 Add Current Limit=300mA Min. Delete TSOT-23-6 Package 1.1 Add TDFN-6 and SOT-23-6 Package May. 13,2013 Modify Ordering information and Marking information Add ESD Rating


    Original     		PDF CS3121 300mA TSOT-23-6 OT-23-6 CS3121

    TP0610K-T1-E3

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 18-Jul-08 TP0610K-T1-E3

    MAX810

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: MAX809/D Rev. 0, 06/1999 Semiconductor Components MAX809 MAX810 SOT–23 PLASTIC PACKAGE TO–236 CASE 318–08 Product Preview ORDERING INFORMATION 3-Pin Microprocessor Reset Monitors MAX809x SOT–23 MAX810x SOT–23 NOTE: The ”x” denotes a suffix for VCC


    Original     		PDF MAX809/D MAX809 MAX810 MAX809x MAX810x 140msec MAX809) MAX810

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: MAX809/D Rev. 1, 07/1999 Semiconductor Components MAX809 MAX810 SOT–23 PLASTIC PACKAGE TO–236 CASE 318 3-Pin Microprocessor Reset Monitors ORDERING INFORMATION MAX809xTR SOT–23 MAX810xTR SOT–23 NOTE: The ”x” denotes a suffix for VCC


    Original     		PDF MAX809/D MAX809 MAX810 MAX809xTR MAX810xTR 140msec MAX809) 63erature

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring


    Original     		PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18

    Untitled

    Abstract: No abstract text available
    Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT−23S CASE 318 THERMAL CHARACTERISTICS


    Original     		PDF MMBD6100LT1 OT-23S

    SBCX19LT1G

    Abstract: SBCX19
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, AEC-Q101 OT-23 O-236) BCX17, BCX19 BCX18 SBCX19LT1G SBCX19

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18

    m6g marking code

    Abstract: m6g transistors marking code m6g marking sot23
    Text: MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors http://onsemi.com N−Channel Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 10


    Original     		PDF MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G AEC-Q101 OT-23 MMBF4391LT1/D m6g marking code m6g transistors marking code m6g marking sot23

    5bm Marking

    Abstract: MMBD6100LT1 MMBD6100LT3
    Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT–23S CASE 318 THERMAL CHARACTERISTICS


    Original     		PDF MMBD6100LT1 r14525 MMBD6100LT1/D 5bm Marking MMBD6100LT1 MMBD6100LT3

    BSV52LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BSV52LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original     		PDF BSV52LT1/D BSV52LT1 236AB) BSV52LT1/D* BSV52LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB


    Original     		PDF LBAV74LT1G 3000/Tape LBAV74LT3G 10000/Tape 236AB)

    ic 556

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB


    Original     		PDF BCX17LT1 BCX18LT1 BCX19LT1 BCX20LT1 236AB) BCX20LT1 BCX17LT1 ic 556

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc


    Original     		PDF BCW68GLT1 236AB)

    6u sot-23

    Abstract: JFET with Yos s22 sot-23
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


    Original     		PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 6u sot-23 JFET with Yos s22 sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS


    Original     		PDF LBAL99LT1G 3000/Tape LBAL99LT3G 10000/Tape 236AB)

    BCW68GLT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BCW68GLT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol Value Unit Collector–Emitter Voltage


    Original     		PDF BCW68GLT1/D BCW68GLT1 236AB) BCW68GLT1/D* BCW68GLT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


    Original     		PDF MMBF5460LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS


    Original     		PDF LMBT918LT1G 3000/Tape LMBT918LT3G 10000/Tape 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LBSS63LT1G PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 Featrues CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER Pb-Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage


    Original     		PDF LBSS63LT1G 236AB)

    SOT23s

    Abstract: SOT23-s MMBD6100LT1 MMBD6100LT3
    Text: MMBD6100LT1 Monolithic Dual Switching Diode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Rating Value Unit VR Reverse Voltage 70 Vdc IF Forward Current 200 mAdc Peak Forward Surge Current 500 mAdc IFM(surge) 3 1 2 PLASTIC SOT–23S CASE 318 THERMAL CHARACTERISTICS


    Original     		PDF MMBD6100LT1 r14525 MMBD6100LT1/D SOT23s SOT23-s MMBD6100LT1 MMBD6100LT3

    BF993

    Abstract: 1S marking transistor transistor bc 132
    Text: TELEFUNKEN ELECTRONIC A1C D ¥i Li(FyMKIKl electronic Creative Technologies • AT20{nb 0005577 BF 993 Marked with: ME - T -31 -=25 N-Channel Dual Gate MOS*Fieldeffect Tetrode •Depletion Mode Applications: Input- and Mlxerstages especially for FM- and VHF TV-tuners up to 300 MHz


    OCR Scan     		PDF 569-GS BF993 1S marking transistor transistor bc 132

    J3005

    Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
    Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages


    OCR Scan     		PDF 569-GS J3005 BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020

    telefunken ta 350

    Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
    Text: TELEFUNKEN ELECTRONIC filC fi^ S O O ^ b D 0 0 0 5 1 0 ^ 5 • AL66 T ~ 3 f~ / y BF 310 TitUlFOMKIlIM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In common base conflguratlon Features: • Small feedback capacltance


    OCR Scan     		PDF ft-11 569-GS 000s154 hal66 if-11 telefunken ta 350 transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b