KMB4D0N30SA
Abstract: JB Sot23 H8 SOT-23
Text: SEMICONDUCTOR KMB4D0N30SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. ① ② KNA 5 1 2. Marking 2 Item Marking Description Device Mark KNA KMB4D0N30SA - - - * Lot No. 51 2006. 51 Week [0:1st Character, 8:2nd Character] Note * Lot No. marking method
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KMB4D0N30SA
OT-23
KMB4D0N30SA
JB Sot23
H8 SOT-23
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BC807
Abstract: No abstract text available
Text: SEMICONDUCTOR BC807 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 5A 1 2 Item Marking Description Device Mark 5 BC807 hFE Grade A 16 A , 25(B), 40(C) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method
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BC807
OT-23
BC807
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IC104
Abstract: No abstract text available
Text: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5
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OT-23-5
Q62702-
Dec-04-1996
IC104
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sot23 material composition
Abstract: sot23 "material composition" TR13
Text: Package Details - SOT-23 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)
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OT-23
EIA-481-1-A
sot23 material composition
sot23 "material composition"
TR13
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820 marking
Abstract: Sot23-6 3020 marking
Text: Packaging Information Mechanical Dimensions SOT-23-6 Unit: mm inch 0° 2.820(0.111) 8° 3.020(0.119) 0.300(0.012) 0.400(0.016) 5 4 Pin 1 Dot by Marking 1 2 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 2.650(0.104) 2.950(0.116) 6 0.200(0.008) 3 0.700(0.028)REF
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OT-23-6
820 marking
Sot23-6
3020 marking
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MARKING SSG SOT23
Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
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OT-23
Q67000-S063
E6327
MARKING SSG SOT23
E6327
Q67000-S063
SN7002
sot-23 Marking 7002
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SOT-23 MARKING 20A
Abstract: marking code 5A6 sot 26 zener 5A6 ON marking 5A6 SOT-23 5A6 marking 5A6 SOT23 ZENER DIODES SOT-23 182 5a6 sot23 marking 33a zener sot23 marking 33a sot23
Text: MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
12sured
MMBZ33VALT1
SOT-23 MARKING 20A
marking code 5A6 sot 26
zener 5A6 ON
marking 5A6
SOT-23 5A6
marking 5A6 SOT23
ZENER DIODES SOT-23 182
5a6 sot23
marking 33a zener sot23
marking 33a sot23
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marking E1 sot23-5
Abstract: G3 sot23-5 mark PD sot-23 TA SOT23-5 MARKING E.1 SOT23-5 E1 SOT23-5 sot23-5 footprint MC78PC18 sot23-5 e.1 marking MC78PC33
Text: MC78PC00 Series Low Noise 150 mA Low Drop Out LDO Linear Voltage Regulator The MC78PC00 are a series of CMOS linear voltage regulators with high output voltage accuracy, low supply current, low dropout voltage, and high Ripple Rejection. Each of these voltage regulators consists of
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MC78PC00
OT-23
OT-23-5
marking E1 sot23-5
G3 sot23-5
mark PD sot-23
TA SOT23-5 MARKING
E.1 SOT23-5
E1 SOT23-5
sot23-5 footprint
MC78PC18
sot23-5 e.1 marking
MC78PC33
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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236AB)
MMBZ33VALT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ5V6ALT1 Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
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marking code 5A6 sot 26
Abstract: zener 5A6 5A6 marking code marking code AC sot 23-5 zener 5A6 ON 5a6 zener marking 27A sot-23 LMBZ27VALT1G marking 5A6 SOT23 5a6 sot23
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
marking code 5A6 sot 26
zener 5A6
5A6 marking code
marking code AC sot 23-5
zener 5A6 ON
5a6 zener
marking 27A sot-23
LMBZ27VALT1G
marking 5A6 SOT23
5a6 sot23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZXXALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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5a6 dual zener diode
Abstract: 5a6 zener diode marking code 5A6 sot 26 MARKING zeners SOT-23 MMBZ5V6ALT1G sot-23 MARKING CODE 21 zener 5A6 MMBZ10VAL MMBZ10VALT1 MMBZ12VAL
Text: MMBZ5V6ALT1 Series Preferred Device 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They
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OT-23
5a6 dual zener diode
5a6 zener diode
marking code 5A6 sot 26
MARKING zeners SOT-23
MMBZ5V6ALT1G
sot-23 MARKING CODE 21
zener 5A6
MMBZ10VAL
MMBZ10VALT1
MMBZ12VAL
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sot 23 70.2
Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code
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2N7002
OT-23
OT-23:
sot 23 70.2
sot-23 MARKING CODE 70.2
SOT-23 Marking code MU
sot23 702
sot-23 702
7002 SOT-23
sot-23 MARKING CODE GS
702 sot 23
diode marking code MU
702W
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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150X1
Abstract: No abstract text available
Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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2N7002
OT-23
VNDS06
150X1,
150X1
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TN2106ND
Abstract: No abstract text available
Text: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3
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TN2106
O-236AB*
TN2106K1
OT-23:
TN2106N3
TN2106ND
OT-23.
TN2106ND
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Untitled
Abstract: No abstract text available
Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN0605T
OT-23
VNDS06
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1403
Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.
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MMBD1401
OT-23
MMBD1404
UMBD1403
MMBD1405
b50113D
1403
R20 marking
M3325
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L43 BAT54
Abstract: SC BAT54C SOT23 397-I L43 SOT-23
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES FAIRCHILD BAT54/A/C/S MICDNDUCTQR n CONNECTION PACKAGE | 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC BAT54C V I B A T 5 4 AN 3 *t i +n ^B A T^ SOT-23 TO-236AB Low DIAGRAMS 1 | 2 | BAT54S 2 1 Schottky Barrier Diode
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BAT54/A/C/S
OT-23
O-236AB
BAT54
BAT54C
BAT54A
BAT54S
BAT54C
BAT54A
BAT54S
L43 BAT54
SC BAT54C SOT23
397-I
L43 SOT-23
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Untitled
Abstract: No abstract text available
Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )
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Si2308DS
O-236
OT-23)
S-58492â
15-June-98
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SI2304DS marking code SOT-23
Abstract: A4* marking code A4 MARKING CODE
Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )
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2304DS
O-236
OT-23)
Si2304DS
S-56945--
23-Nov-98
SI2304DS marking code SOT-23
A4* marking code
A4 MARKING CODE
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