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    SOT-23-5 MARKING CODE SB Search Results

    SOT-23-5 MARKING CODE SB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23-5 MARKING CODE SB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot23 material composition

    Abstract: sot23 "material composition" TR13
    Text: Package Details - SOT-23 Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)


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    PDF OT-23 EIA-481-1-A sot23 material composition sot23 "material composition" TR13

    Untitled

    Abstract: No abstract text available
    Text: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


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    PDF BC856ALT1G SBC856ALT1G AEC-Q101 BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859

    NSVBC858

    Abstract: BC857BLT1G SBC856ALT1G SBC856BLT1G SBC857ALT1G SBC857BLT1G SBC857CLT1G bc856blt
    Text: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements


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    PDF BC856ALT1G SBC856ALT1G AEC-Q101 BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 NSVBC858 BC857BLT1G SBC856BLT1G SBC857ALT1G SBC857BLT1G SBC857CLT1G bc856blt

    Untitled

    Abstract: No abstract text available
    Text: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements


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    PDF BC856ALT1G SBC856ALT1G BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859

    SBC846B

    Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
    Text: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable


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    PDF BC846ALT1G SBC846ALT1G AEC-Q101 BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC846B BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES 1G t 90 SOT-23 SBC847C

    Untitled

    Abstract: No abstract text available
    Text: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable


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    PDF BC846ALT1G SBC846ALT1G BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • S and NSV Prefix for Automotive and Other Applications Requiring


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    PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18

    BAS19LT1G

    Abstract: BAS19L
    Text: BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 • S and NSV Prefixes for Automotive and Other Applications


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    PDF BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 AEC-Q101 OT-23 BAS19LT1G BAS19L

    k 790

    Abstract: BAS19LT1G BAS19L
    Text: BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 • S and NSV Prefixes for Automotive and Other Applications


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    PDF BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 AEC-Q101 OT-23 k 790 BAS19LT1G BAS19L

    SBCX19LT1G

    Abstract: SBCX19
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


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    PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, AEC-Q101 OT-23 O-236) BCX17, BCX19 BCX18 SBCX19LT1G SBCX19

    BAS19L

    Abstract: No abstract text available
    Text: BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com Features HIGH VOLTAGE SWITCHING DIODE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


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    PDF BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 BAS19 BAS20, SBAS20 BAS19L

    hM sot-353

    Abstract: SBAS21DW5T1G BAS19LT1G SBAS20LT1G SBAS21LT1G BAS21 SOT-23 SBAS21LT3G SOT23 Marking JX HM SOT23-3 bas21dw5t
    Text: BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com Features HIGH VOLTAGE SWITCHING DIODE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


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    PDF BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 AEC-Q101 OT-23 BAS19 hM sot-353 SBAS21DW5T1G BAS19LT1G SBAS20LT1G SBAS21LT1G BAS21 SOT-23 SBAS21LT3G SOT23 Marking JX HM SOT23-3 bas21dw5t

    Untitled

    Abstract: No abstract text available
    Text: BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT−23 TO−236 CASE 318−08 STYLE 6 Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique


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    PDF BCX17LT1G, BCX18LT1G, BCX19LT1G, SBCX19LT1G, BCX17, BCX19 BCX18

    Untitled

    Abstract: No abstract text available
    Text: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G Dual Switching Diode Common Anode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318


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    PDF BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G BAW56LT1/D

    SBAW56LT1G

    Abstract: BAW56LT1G
    Text: BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G http://onsemi.com Dual Switching Diode Common Anode Features • AEC−Q101 Qualified and PPAP Capable  S & SSV1 Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318


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    PDF BAW56LT1G, SBAW56LT1G, BAW56LT3G, SBAW56LT3G, SSV1BAW56LT1G AEC-Q101 OT-23 O-236) BAW56LT1/D SBAW56LT1G BAW56LT1G

    Transistors 5A1 8

    Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


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    PDF BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C

    Untitled

    Abstract: No abstract text available
    Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    PDF BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements


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    PDF BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D

    BAS16LT1G

    Abstract: No abstract text available
    Text: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT1G

    BAV99LT1G

    Abstract: No abstract text available
    Text: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    PDF BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G BAV99LT1/D BAV99LT1G

    BAV70LT1G

    Abstract: SBAV70LT3 SBAV70LT1G
    Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements


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    PDF BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G AEC-Q101 OT-23 O-236) BAV70LT1/D BAV70LT1G SBAV70LT3 SBAV70LT1G

    BAS16LT3G

    Abstract: BAS16LT1G SBAS16LT1G
    Text: BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BAS16LT1G, BAS16LT3G, SBAS16LT1G, SBAS16LT3G AEC-Q101 BAS16LT1/D BAS16LT3G BAS16LT1G SBAS16LT1G

    Untitled

    Abstract: No abstract text available
    Text: BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G Dual Switching Diode Common Cathode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements


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    PDF BAV70LT1G, SBAV70LT1G, BAV70LT3G, SBAV70LT3G BAV70LT1/D

    Transistor SJ 2517

    Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
    Text: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion


    OCR Scan
    PDF BUV70 T-33-13 T0126 15A3DIN Transistor SJ 2517 transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a