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    SOT-23-5 BN MARKING Search Results

    SOT-23-5 BN MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23-5 BN MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot 23-5 marking code fairchild

    Abstract: No abstract text available
    Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NC7SB3157. SC88/SOT 363/SC r14525 NLASB3157/D sot 23-5 marking code fairchild PDF

    NC7SB3157

    Abstract: NLASB3157 NLASB3157DFT2
    Text: NLASB3157 Product Preview 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. r14525 NLASB3157/D NC7SB3157 NLASB3157DFT2 PDF

    marking AF sc70-6

    Abstract: No abstract text available
    Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NC7SB3157. NLASB3157/D marking AF sc70-6 PDF

    LMC50

    Abstract: OPA602AP 602BP OPA602 OPA602AU OPA602BP 602AU 2N556
    Text: OPA602 OPA OPA 602 602 SBOS155A – AUGUST 1987 – REVISED OCTOBER 2002 High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● WIDE BANDWIDTH: 6.5MHz HIGH SLEW RATE: 35V/µs LOW OFFSET: ±250µV max


    Original     		OPA602 SBOS155A OPA602 LMC50 OPA602AP 602BP OPA602AU OPA602BP 602AU 2N556 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G3157 SINGLE-POLE, DOUBLE-THROW ANALOG SWITCH SCES424 – JANUARY 2003 D D D D D D D D D DBV OR DCK PACKAGE TOP VIEW 1.65-V to 5.5-V VCC Operation Useful for Both Analog and Digital Applications Specified Break-Before-Make Switching Rail-to-Rail Signal Handling


    Original     		SN74LVC1G3157 SCES424 000-V A114-A) A115-A) SN74LVC1G3157DCKR SN74LVC1G3157DGVR SN74LVC1G3157 SCEM322, PDF

    A115-A

    Abstract: C101 SN74TVC3306 SN74TVC3306DCTR SN74TVC3306DCUR
    Text: SN74TVC3306 DUAL VOLTAGE CLAMP SCDS112A – MARCH 2001 – REVISED MAY 2001 D D D D D D DCT OR DCU PACKAGE TOP VIEW Designed to Be Used in Voltage-Limiting Applications 3.5-Ω On-State Connection Between Ports A and B Flow-Through Pinout for Ease of Printed


    Original     		SN74TVC3306 SCDS112A 000-V A114-A) A115-A) SN74TVC3306 A115-A C101 SN74TVC3306DCTR SN74TVC3306DCUR PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC1G3157 SINGLEĆPOLE, DOUBLEĆTHROW ANALOG SWITCH SCES424E − JANUARY 2003 - REVISED JUNE 2005 D 1.65-V to 5.5-V VCC Operation D Useful for Both Analog and Digital D D D D D Applications Specified Break-Before-Make Switching Rail-to-Rail Signal Handling


    Original     		SN74LVC1G3157 SCES424E 000-V A114-A) A115-A) PDF

    405C

    Abstract: NC7SB3157 NLASB3157 NLASB3157DFT2 NLASB3157DFT2G
    Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. SC-88 NLASB3157/D 405C NC7SB3157 NLASB3157DFT2 NLASB3157DFT2G PDF

    smd transistor HX

    Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
    Text: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		82CXXX -25oC -40oC -55oC 125oC JM38510/ 1-888-INTERSIL smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES PDF

    A115-A

    Abstract: C101 SN74AHCT1G126 SN74AHCT1G126DBVR
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) SN74AHCT1G126 A115-A C101 SN74AHCT1G126DBVR PDF

    PAL 005

    Abstract: pal 005 am NLASB3157DFT2G PAL 005 A PAL 008 Automotive Bus Switch plate DBM 01 spdif 5.1 NC7SB3157 NLASB3157
    Text: NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. SC-88 NLASB3157/D PAL 005 pal 005 am NLASB3157DFT2G PAL 005 A PAL 008 Automotive Bus Switch plate DBM 01 spdif 5.1 NC7SB3157 PDF

    NLASB3157DFT2G

    Abstract: NC7SB3157 NLASB3157 NLASB3157DFT2 NLASB3157MTR2G
    Text: NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. SC-88 NLASB3157/D NLASB3157DFT2G NC7SB3157 NLASB3157DFT2 NLASB3157MTR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. NLASB3157/D PDF

    NLASB3157DFT2G

    Abstract: NC7SB3157 NLASB3157 NLASB3157DFT2 NLVASB3157 NLVASB3157DFT2 NLVASB3157DFT2G
    Text: NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. SC-88 NLASB3157/D NLASB3157DFT2G NC7SB3157 NLASB3157DFT2 NLVASB3157 NLVASB3157DFT2 NLVASB3157DFT2G PDF

    NLASB3157DFT2G

    Abstract: NC7SB3157 NLASB3157 NLASB3157DFT2 NLASB3157MTR2G
    Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NLASB3157 NC7SB3157. SC-88 NLASB3157/D NLASB3157DFT2G NC7SB3157 NLASB3157DFT2 NLASB3157MTR2G PDF

    A115-A

    Abstract: C101 SN74AHCT1G126 SN74AHCT1G126DBVR
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) SN74AHCT1G126 A115-A C101 SN74AHCT1G126DBVR PDF

    MMBD201

    Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
    Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		MMBD2010T~ 2PHX34593F+ MMBD201 BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLASB3157 SPDT, 3 W RON Switch The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original     		NLASB3157 NC7SB3157. SC-88 NLASB3157/D PDF

    A115-A

    Abstract: C101 SN74AHCT1G126 SN74AHCT1G126DBVR
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) SN74AHCT1G126 A115-A C101 SN74AHCT1G126DBVR PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) PDF

    Untitled

    Abstract: No abstract text available
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) PDF

    A115-A

    Abstract: C101 SN74AHCT1G126 SN74AHCT1G126DBVR
    Text: SN74AHCT1G126 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT SCLS380I – AUGUST 1997 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 6 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V


    Original     		SN74AHCT1G126 SCLS380I 000-V A114-A) A115-A) SN74AHCT1G126 A115-A C101 SN74AHCT1G126DBVR PDF

    BCX61

    Abstract: 71 j BCW61A
    Text: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High current gain Low collector-em itter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN Type BCW 61 BCX 71 BCW 61 BCW 61


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