Untitled
Abstract: No abstract text available
Text: Package Information SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate
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OT-23
177cm
330cm
OT-23
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KA7812
Abstract: 7103 A0 SOT-23 KA7812 INTEGRATED CIRCUIT polystyrene film SOT23 JEDEC standard orientation SOT23 JEDEC standard
Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-23
KA7812
7103
A0 SOT-23
KA7812 INTEGRATED CIRCUIT
polystyrene film
SOT23 JEDEC standard orientation
SOT23 JEDEC standard
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PDF
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Code sot-23 on semiconductor
Abstract: wc sot23 rd sot23
Text: SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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Original
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OT-23
177cm
330cm
Code sot-23 on semiconductor
wc sot23
rd sot23
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PDF
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marking y1 sot-23
Abstract: SOT-23 MARKING w5 wT 3 sot23 ZENER Y1 SOT-23 SOT-23 marking y1 sot 23 marking code Z9 marking y4 sot-23 marking code w2 sot23 marking 301 sot-23 sot23 Z15 marking
Text: BZX84C2V4 THRU BZX84C51 410mW SURFACE MOUNT SILICON ZENER DIODES 2.4V ~51V SOT-23 PACKAGE Pb Free Product FEATURES SOT-23 * Planar Die construction * 410mW Power Dissipation .056 1.40 .103(2.60) .047(1.20) MECHANICAL DATA .007(.20)MIN .119(3.00) .110(2.80)
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BZX84C2V4
410mW
OT-23
BZX84C51
OT-23
OT-23,
MIL-STD-202E,
BZX84C2V4
marking y1 sot-23
SOT-23 MARKING w5
wT 3 sot23 ZENER
Y1 SOT-23
SOT-23 marking y1
sot 23 marking code Z9
marking y4 sot-23
marking code w2 sot23
marking 301 sot-23
sot23 Z15 marking
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PDF
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4T SOT 23
Abstract: MMBD301 SOT23 JEDEC standard orientation
Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted
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MMBD301
OT-23
O-236AB
O236AB
4T SOT 23
MMBD301
SOT23 JEDEC standard orientation
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PDF
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MMBD701
Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD701
OT-23
O-236AB
O236AB
MMBD701
D0 sot23
A0 SOT23
FS PKG CODE 49
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PDF
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SOT23 JEDEC standard orientation
Abstract: SOT-23 4TF MMBD301
Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature
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MMBD301
OT-23
O-236AB
O236AB
SOT23 JEDEC standard orientation
SOT-23 4TF
MMBD301
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PDF
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zener sot23
Abstract: wT 3 sot23 ZENER
Text: BZX84C SERIES PB FREE PRODUCT SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 - 75 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES • Planar Die construction .056(1.40) MECHANICAL DATA • Case: SOT-23, Molded Plastic .083(2.10) .066(1.70) • Terminals: Solderable per MIL-STD-202, Method 208
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BZX84C
OT-23,
MIL-STD-202,
410mW
zener sot23
wT 3 sot23 ZENER
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PDF
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BZT52C5V1-V
Abstract: BZT52C4V7-v 6 21 X2 marking code sot 353 BZT52B2V7-V BZT52-C22V X4 diode zener BZT52B33V BZT52B20V 6 21 X2 marking code sot 323 bzt52c18-v
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
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BZT52-V-Series
OT-23
BZX84
2002/95/EC
2002/96/EC
OD-123
D-74025
21-Apr-05
BZT52C5V1-V
BZT52C4V7-v
6 21 X2 marking code sot 353
BZT52B2V7-V
BZT52-C22V
X4 diode zener
BZT52B33V
BZT52B20V
6 21 X2 marking code sot 323
bzt52c18-v
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PDF
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FAIRCHILD SOT-23 MARK 1a
Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
FAIRCHILD SOT-23 MARK 1a
BC846 SOT23
NPN sot23 mark NF
847C
BC846
BC847
fAIRCHILD BC847b
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BZT52B5V6-V
Abstract: BZT52C39-V Zener diode wz 140 BZT52C16-V bzt52vseries bzt52b5v1-v BZT52B22 BZT52C5V1-V BZT52-V BZT52C3V3-V
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
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BZT52-V-Series
OT-23
BZX84
2002/95/EC
2002/96/EC
OD-123
08-Apr-05
BZT52B5V6-V
BZT52C39-V
Zener diode wz 140
BZT52C16-V
bzt52vseries
bzt52b5v1-v
BZT52B22
BZT52C5V1-V
BZT52-V
BZT52C3V3-V
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PDF
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X4 diode zener
Abstract: BZT52C24V bzt52s BZT52-C12V
Text: BZT52-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
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BZT52-Series
OT-23
BZX84
OD-123
D-74025
10-Mar-05
X4 diode zener
BZT52C24V
bzt52s
BZT52-C12V
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PDF
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VISHAY WL ZENER
Abstract: BZT52B16-V BZT52C5V6 BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V BZX84 DZ23 bzt52vseries
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
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BZT52-V-Series
OT-23
BZX84
2002/95/EC
2002/96/EC
OD-123
18-Jul-08
VISHAY WL ZENER
BZT52B16-V
BZT52C5V6
BZT52C2V4-V
BZT52C2V7-V
BZT52C3V0-V
BZT52C3V3-V
DZ23
bzt52vseries
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transistor w2B
Abstract: No abstract text available
Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection
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OT-66
ADG3231
OT-23
ADG3231
ADG3231BRJ-REEL
ADG3231BRJ-REEL7
ADG3231BRJZ-REEL
ADG3231BRJZ-REEL71
ADG3231BRYZ-REEL71
transistor w2B
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transistor w2B
Abstract: ADG3231BRJ-REEL ADG3231 ADG3231BRJ-REEL7 ADG3231BRJZ-REEL SOT-66
Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection
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OT-66
ADG3231
OT-23
ADG3231
ADG3231BRJ-REEL
ADG3231BRJ-REEL7
ADG3231BRJZ-REEL
ADG3231BRJZ-REEL71
ADG3231BRYZ-REEL71
transistor w2B
ADG3231BRJ-REEL
ADG3231BRJ-REEL7
SOT-66
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Untitled
Abstract: No abstract text available
Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
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2N3904
MMBT3904
PZT3904
2N3904
MMBT3904
OT-23
OT-223
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marking w0 sot-23
Abstract: FHZ02W15V FHZ02W3.3V FHZ84C10 FHZ5221B sot23 Marking f7 FHZ02W6.2V FHZ02 FHZ5223B FHZ5224B
Text: SOT-23 稳压二极管(SOT-23 ZENER DIODES) Pinout: 型号 TYPE FHZ5217B FHZ5219B FHZ5221B FHZ5222B FHZ5223B FHZ5224B FHZ5225B FHZ5226B FHZ5227B FHZ5228B FHZ5229B FHZ5230B FHZ5231B FHZ5232B FHZ5233B FHZ5234B FHZ5235B FHZ5236B FHZ5237B FHZ5238B FHZ5239B
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OT-23
FHZ5217B
FHZ5219B
FHZ5221B
FHZ5222B
FHZ5223B
FHZ5224B
FHZ5225B
FHZ5226B
marking w0 sot-23
FHZ02W15V
FHZ02W3.3V
FHZ84C10
FHZ5221B
sot23 Marking f7
FHZ02W6.2V
FHZ02
FHZ5223B
FHZ5224B
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marking P2 sot-23
Abstract: wA MARKING SOT-23 SERIES DIODE 1403A MMBD1400 MMBD1401 MMBD1401A MMBD1403 MMBD1404 MMBD1405 1405A
Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1401
MMBD1404
MMBD1403
MMBD1405
marking P2 sot-23
wA MARKING SOT-23 SERIES DIODE
1403A
MMBD1400
MMBD1401A
MMBD1404
MMBD1405
1405A
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ADG3231
Abstract: ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1
Text: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Y A GND APPLICATIONS 03298-001 Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages
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OT-66
ADG3231
OT-23
ADG3231
ADG3231BRJ-REEL
ADG3231BRJ-REEL7
ADG3231BRJZ-REEL1
ADG3231BRJZ-REEL71
ADG3231BRYZ-REEL1
ADG3231BRJ-REEL
ADG3231BRJ-REEL7
sot66
ADG3231BRYZ-REEL1
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a13 sot23-5
Abstract: sine wave generator using LM358 EME-7351 A14* marking sot23-5 SOT23 M7 simple LM324 COMPARATOR CIRCUIT a13 marking sot23 Analog devices marking Information PACKAGE SOIC eme marking sot23 LMV321M5
Text: t s e all r o t a r a p m o C & SPRING p m Sm SI SC7 NGLE 0-5/ SOT +IN 1 23-5 Op A in D l r o W e h t s ’ e s On thi for V- 2 LMV821 LMV358 LMV393 LMV822 LMV324 LMV339 LMV824 A UT O • Rail-to-Rail Output 50% Smaller than SOT-23 Supply Operation build an we
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LMV821
LMV358
LMV393
LMV822
LMV324
LMV339
OT-23
a13 sot23-5
sine wave generator using LM358
EME-7351
A14* marking sot23-5
SOT23 M7
simple LM324 COMPARATOR CIRCUIT
a13 marking sot23
Analog devices marking Information PACKAGE SOIC
eme marking sot23
LMV321M5
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PDF
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transistor bel 100
Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
transistor bel 100
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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PDF
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bel 188 transistor
Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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PDF
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671 transistor
Abstract: S5M1
Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . 020 SOT-89 4 50 . 0 20 4 l _ ci rfi 671 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 672 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 673 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters
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OCR Scan
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OT-23
OT-89
O-92/TO-92S/TO-92L
671 transistor
S5M1
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PDF
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transistor b 647 c
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS Dimensions in Milimeters SOT-23 2 9 0 . o 20 SOT-89 . 1 5 0 0 20 _ Ì L _ I 1— $ - 641 ELECTRONICS PACKAGE DIMENSIONS 642 ELECTRONICS PACKAGE DIMENSIONS 643 ELECTRONICS PACKAGE DIMENSIONS Dimensions in Milimeters 644 ELECTRONICS PACKAGE DIMENSIONS
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OCR Scan
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OT-23
OT-89
O-92/TO-92S/TO-92L
transistor b 647 c
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PDF
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