Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-23 SINGLE DIODE MARK PD Search Results

    SOT-23 SINGLE DIODE MARK PD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 SINGLE DIODE MARK PD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ln2312

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner ln2312

    LN2312LT1G

    Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2312LT1G 236AB) 3000/Tape LN2312LT3G 10000/Tape 195mm 150mm 3000PCS/Reel LN2312LT1G LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner

    sot-23 single diode mark PD

    Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		PDF LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23

    LP4101LT1G

    Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP4101LT1G 236AB) 3000/Tape LP4101LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP4101LT1G P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD

    LP2301LT1G

    Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD

    SC-75

    Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
    Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit


    Original     		PDF L2SK3019LT1G 100mA) 3000/Tape L2SK3019LT3G 000/Tape 195mm 150mm 3000PCS/Reel SC-75 sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019

    marking code C4 Sot 23-5

    Abstract: EIAJ-SC74A sot23-5 marking code LDC MAX828 Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817
    Text: MAX828 MAX829 Switched Capacitor Voltage Converters The MAX828/829 are CMOS “charge–pump” voltage converters in ultra–small SOT–23 5 lead packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion efficiency is typically >95%. Switching frequency is 12kHz for the


    Original     		PDF MAX828 MAX829 MAX828/829 12kHz 35kHz MAX829. MAX828) MAX829) marking code C4 Sot 23-5 EIAJ-SC74A sot23-5 marking code LDC Marking C4 SOT23-5 INVERTER 10kW sot 23-5 mark c2 marking code AC sot 23-5 1N4148 1N5817

    7s14

    Abstract: a25 sot23-5 national semiconductor databook mark a7 sot23 mark a7 sot23 DIODE SOT23-5 VH 12135 NC7S14 NC7S14M5 NC7S14M5X
    Text: NC7S14 Tiny Inverter with Schmitt Trigger Input General Description Features The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input in National’s TinyPakTM package The circuit design provides hysteresis between the positivegoing and negative going input thresholds thereby improving noise margins


    Original     		PDF NC7S14 NC7S14 NC7S14M5 7s14 a25 sot23-5 national semiconductor databook mark a7 sot23 mark a7 sot23 DIODE SOT23-5 VH 12135 NC7S14M5 NC7S14M5X

    LP2307LT1G

    Abstract: LP2307
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4A = 60mΩ RDS(ON), Vgs@-2.5V, Ids@-3A = 70 mΩ LP2307LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2307LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LP2307LT1G LP2307

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    MAX4242

    Abstract: No abstract text available
    Text: 19-1343; Rev 3; 9/06 Single/Dual/Quad, +1.8V/10µA, SOT23, Beyond-the-Rails Op Amps The MAX4240–MAX4244 family of micropower op amps operate from a single +1.8V to +5.5V supply or dual ±0.9V to ±2.75V supplies and have Beyond-the-Rails inputs and rail-to-rail output capabilities. These amplifiers provide a 90kHz gain-bandwidth product while


    Original     		PDF MAX4240â MAX4244 90kHz MAX4241/MAX4243 OT-23 MAX4244 MAX4242

    465Z

    Abstract: mts 300
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1854A I2C BUS-COMPATIBLE US MTS PROCESSING LSI The µPC1854A is an integrated circuit for US MTS Multichannel Television Sound system with the addition of the I2C bus interface. All functions required for US MTS system are incorporated on a single chip.


    Original     		PDF PC1854A PC1854A 465Z mts 300

    TEF110-95F136MB

    Abstract: MB95130MB MB95136MB MB95F136MBWPFV F136MBS
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12621-1E 8-bit Microcontrollers CMOS F2MC-8FX MB95130MB Series / /


    Original     		PDF DS07-12621-1E MB95130MB /F133NBS/F133JBS/F134MBS/F134NBS/F134JBS/ /F136JBS/F133MBW/F133NBW/F133JBW/F134MBW/ 134JBW/F136MBW/F136NBW/F136JBW/FV100D-103 16-bit F0707 TEF110-95F136MB MB95136MB MB95F136MBWPFV F136MBS

    MB95F134JBS

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12621-1Ea 8-bit Microcontrollers CMOS F2MC-8FX MB95130MB Series / /


    Original     		PDF DS07-12621-1Ea MB95130MB /F133NBS/F133JBS/F134MBS/F134NBS/F134JBS/ /F136JBS/F133MBW/F133NBW/F133JBW/F134MBW/ 134JBW/F136MBW/F136NBW/F136JBW/FV100D-103 16-bit MB95F134JBS

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12612-1E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95130M Series / • DESCRIPTION The MB95130M series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,


    Original     		PDF DS07-12612-1E MB95130M 133MS/F133NS/F134MS/F134NS/F136MS/F136NS/ NW/F134MW/F134NW/F136MW/F136NW/FV100D-103 16-bit F0609

    L0910

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12612-2E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95130M Series / • DESCRIPTION The MB95130M series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,


    Original     		PDF DS07-12612-2E MB95130M 133MS/F133NS/F134MS/F134NS/F136MS/F136NS/ NW/F134MW/F134NW/F136MW/F136NW/FV100D-103 16-bit F0609 L0910

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Unitrode Semiconductor

    Abstract: No abstract text available
    Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W


    OCR Scan     		PDF J347c UM7000 UM7100 UM7200 UM7000) MA02172 Unitrode Semiconductor

    UM7108

    Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
    Text: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W


    OCR Scan     		PDF UM7000) UM7000 UM7100 UM7200 cJ347cib3 MA02172 UM7108 MICROWAVE DIODE CORP UM7006 UM7001 UM7002 UM7101 UM7102

    MC145406

    Abstract: motorola c520 CDA 6.0 MC TX 2E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C I45406 Driver/Receiver EIA-232-E and CCITT V.28 Formerly RS-232-D The MC145406 is a silicon-gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications of standards E IA -2 3 2 -E and C C IT T V.28. The d riv e rs fe a tu re tru e T TL in p u t


    OCR Scan     		PDF I45406 EIA-232-E RS-232-D) MC145406 300-Q -232-E 300-B b3b72S3 motorola c520 CDA 6.0 MC TX 2E

    NTR 606

    Abstract: No abstract text available
    Text: January 1999 S E M IC O N D U C T O R NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    OCR Scan     		PDF NDH8321C NTR 606