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    SOT-23 S72 Search Results

    SOT-23 S72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 S72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SMD s72

    Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application


    Original     		PDF 2N7002 OT-23 2N7002 C-120 2N7002Rev021104E transistor SMD s72 S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23

    Mosfet

    Abstract: 2N7002KB
    Text: 2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KB OT-23 Mosfet 2N7002KB

    transistor s72

    Abstract: transistor marking s72 2N7002
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data


    Original     		PDF 2N7002 OT-23 OT-23, MIL-STD-202, 500mA DS11303 transistor s72 transistor marking s72 2N7002

    Marking Code S72

    Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance


    Original     		PDF 2N7002 O-236AB OT-23) OT-23 45NCE 500mA Marking Code S72 mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23

    2N7002 marking code 72

    Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 2N7002 marking code 72 Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J

    s72 sot 23

    Abstract: No abstract text available
    Text: BS870 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)


    Original     		PDF BS870 OT-23 OT-23 BS850 s72 sot 23

    S72 FET

    Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)


    Original     		PDF 2N7002 230mA O-236AB OT-23) OT-23 S72 FET 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72

    transistor marking s72

    Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original     		PDF 2N7002 OT-23 transistor marking s72 transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23

    S72 2n7002

    Abstract: 2N7002 MARKING s72 transistor marking s72 2N7002 S72 SOT-23 2N7002 2N7002 MARKING S72 marking s72 sot 23 transistor s72 marking s72
    Text: 2N7002 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)


    Original     		PDF 2N7002 OT-23 OT-23 S72 2n7002 2N7002 MARKING s72 transistor marking s72 2N7002 S72 SOT-23 2N7002 2N7002 MARKING S72 marking s72 sot 23 transistor s72 marking s72

    Si2309DS

    Abstract: Si2309DS-T1
    Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code


    Original     		PDF Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 18-Jul-08

    Si2309DS

    Abstract: Si2309DS-T1 7083
    Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code


    Original     		PDF Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 08-Apr-05 7083

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


    Original     		PDF

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L

    2N615L

    Abstract: 55B5 BSP615S2L 2N615
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    K72 so

    Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic


    OCR Scan     		PDF 2N7002-01 OT-23 IL-STD-202, -250pA 300ns, DS30026 K72 so transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor

    transistor marking s72

    Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
    Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002 OT-23, MIL-STD-202, OT-23 DS11303 2N7002 transistor marking s72 transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel FEATURES SOT -23 High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No m inority carrier storage tim e C M O S logic com patible input No thermal runaway No secondary breakdown


    OCR Scan     		PDF 2N7002 OT-23

    Tr 2SA1576

    Abstract: 2SC4649 2sb1051
    Text: Tr T ransistürs • EM3, UMT, SMT SOT-23, SC-59 Type Type UM T — — 2SA1037KLN — — 2SA1455K — — 2SC2412KLN — — 2SC3722K 2SA1774 — 2SC4617 Vi I :)(V) •V,.^ Function EM3 SMT Low Noise lr (mA) Pc(mW)(Ta = 25"C) UMT, SMT EM3 hff V ce(V) Ir(mA)


    OCR Scan     		PDF OT-23, SC-59) 2SC4619 2SC4725 2SC4726 Tr 2SA1576 2SC4649 2sb1051

    mosfet s72

    Abstract: s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23
    Text: _2N7002 c p : G e n e r a l v S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET % Vds 6 0 V RdS ON) 3 .0 Q Id 2 3 0 m A TO-236AB (SOT-23) .122 .110 m. 0.031 (0.8) JL .016 (0.4) H h Top V ie w -[p - 0.035(0.9) 0.079 (2.0) Pin Configuration


    OCR Scan     		PDF 2N7002 O-236AB OT-23) OT-23 OT-23, S0T-23-6L mosfet s72 s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23

    74LV4094

    Abstract: 74LV4094D 74LV4094N
    Text: NAPC/PHILIPS SEMICOND b3E D WM bbSBTSM OOÛBÛM'l T7T H S I C 3 Philips Semiconductors Preliminary Specification 8-stage shift-and-store bus register FEATURES • Serial-to-parallel data conversion • Remote control holding register DESCRIPTION The 74LV4094 is a low-voltage


    OCR Scan     		PDF 74LV4094 74LV4094 74HC/HCT4094. 74LV4094D 74LV4094N