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    SOT-23 PRODUCT CODE BSS123 Search Results

    SOT-23 PRODUCT CODE BSS123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 PRODUCT CODE BSS123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23 marking 717

    Abstract: SAP SOT23 sot-23 MARKING CODE 718
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		PDF BSS123 O-236AB: O-236AB* OT-23. SOT-23 marking 717 SAP SOT23 sot-23 MARKING CODE 718

    SAP SOT23

    Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		PDF BSS123 O-236AB: O-236AB* OT-23. SAP SOT23 marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5

    BSS123LT1

    Abstract: BSS123LT1G BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage


    Original     		PDF BSS123LT1 OT-23 BSS123LT1/D BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


    Original     		PDF BSS123LT1 OT-23 BSS123LT1/D

    BSS123LT1G

    Abstract: BSS123LT1 BSS123LT3 BSS123LT3G
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com Features • Pb−Free Packages are Available 170 mAMPS 100 VOLTS RDS on = 6 W N−Channel 3 MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDSS


    Original     		PDF BSS123LT1 OT-23 BSS123LT1/D BSS123LT1G BSS123LT1 BSS123LT3 BSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF BSS123LT1G, BVSS123LT1G BSS123LT1/D

    BSS123LT1G

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original     		PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D BSS123LT1G

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original     		PDF BSS123LT1G, BVSS123LT1G BSS123LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original     		PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BSS123LT1/D

    sot-23 mosfet Marking SA s

    Abstract: BSS123LT1 BSS123LT3
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs VGS VGSM ±20 ±40 Vdc


    Original     		PDF BSS123LT1 r14525 BSS123LT1/D sot-23 mosfet Marking SA s BSS123LT1 BSS123LT3

    BC237

    Abstract: 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN  Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


    Original     		PDF BSS123LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2N3819 junction fet

    BF245 application note

    Abstract: transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies


    Original     		PDF MBD110DWT1 MBD330DWT1 MBD770DWT1 SO218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BF245 application note transistor BF245 2n4036 equivalent BC237 H.P. Part Numbers to JEDEC Numbers 2N4036 2N3819 Application Note BF245 TRANSISTOR SOT-363 X3 SOT 363 marking CODE m4 6 21 X2 marking code sot 363

    DELTA fan bfb

    Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original     		PDF MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    2n3019 replacement

    Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices


    Original     		PDF 70/SOT MBV109T1 MMBV109LT1* MV209* R218A MSC1621T1 MSC2404 MSD1819A MV1620 2n3019 replacement BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N02LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: marking CODE N3 SOT223 marking N3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s


    Original     		PDF MMBF0202PLT1 ENHANCE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    2n3819 replacement

    Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical


    Original     		PDF MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 2n3819 replacement transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement

    BF245 application note

    Abstract: BC237 SOT-223 package outline 2N3819 Application Note BF245 sot-23 body marking A c 2N3819 Application Note Results 12584 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package


    Original     		PDF MMBV432LT1 CAPACI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 application note BC237 SOT-223 package outline 2N3819 Application Note BF245 sot-23 body marking A c 2N3819 Application Note Results 12584 BCY72

    SOT-23 Product Code bss123

    Abstract: DSS SOT23 marking 9a sot-23
    Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code


    OCR Scan     		PDF OT-23 BSS123 OT-23: SOT-23 Product Code bss123 DSS SOT23 marking 9a sot-23