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    SOT-23 MOSFET Search Results

    SOT-23 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


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    2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT PDF

    8002A

    Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
    Text: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89


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    OD-923 OT-923 OT-953 OT-963 OD-523 OD-323 OT-323 OT-363 OD-123 OT-143 8002A 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532 PDF

    EIA-486

    Abstract: GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork
    Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor


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    OD-723 OD-523 OD-323 O-252 OT-23-6 OT-523 OT-323 OT-23 OT-323 EIA-486 GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork PDF

    SD965

    Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
    Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor


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    OD-723 OD-523 OD-323 O-252 OT-23-6 OT-523 OT-323 OT-23 OT-323 SD965 J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


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    O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter


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    OT-23-6L NCE8205 OT-23-6L PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter


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    OT-23-6L NCE8205 OT-23-6L 250uA PDF

    b84 diode

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


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    OT-23 BSS84 OT-23 b84 diode PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


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    OT-23 BSS84 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON . z Exceptional on-resistance and maximum DC current capability


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    OT-23 CJ3401 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON . z Exceptional on-resistance and maximum DC current capability


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    OT-23 CJ3401 OT-23 PDF

    2N7002 MARKING

    Abstract: TD 225 n-channel mosfet SOT-23 7002 n channel 2N7002 marking 7002 marking 7002 sot 23 7002 SOT23
    Text: 2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES 1. GATE 2. SOURCE High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability 3. DRAIN


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    2N7002 OT-23 OT-23 2N7002 MARKING TD 225 n-channel mosfet SOT-23 7002 n channel 2N7002 marking 7002 marking 7002 sot 23 7002 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON z Exceptional on-resistance and maximum DC current capability


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    OT-23 CJ3400 OT-23 PDF

    2N7002 MARKING

    Abstract: mosfet 2n7002 SOT-23 2N7002 MARKING 7002
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 specifie10 500mA 200mA 115mA, 500mA 2N7002 MARKING mosfet 2n7002 SOT-23 2N7002 MARKING 7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 500mA PDF

    2N7002K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002K OT-23 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


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    OT-23 2SK3018 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002K OT-23 300mA -100A/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 200mA 500mA 115mA, 500mA PDF

    marking 72K

    Abstract: n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K 2N7002K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002K OT-23 500mA 300mA 300mA -100A/ marking 72K n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-23 2N7002 OT-23 200mA 500mA 115mA, 500mA PDF