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    SOT-23 MARKING J25 Search Results

    SOT-23 MARKING J25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING J25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		PDF OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    DVB-T Schematic set top box

    Abstract: marking 0g sot-89 NCP4687DH12T1G J18-J25 marking 9x sot23-5 9x sot23-5 3.3 LDO
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		PDF NCP4687 NCP4687/D DVB-T Schematic set top box marking 0g sot-89 NCP4687DH12T1G J18-J25 marking 9x sot23-5 9x sot23-5 3.3 LDO

    DVB-T Schematic set top box

    Abstract: marking 0g sot-89 Marking L2 Packaging SOT23-5
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		PDF NCP4687 NCP4687/D DVB-T Schematic set top box marking 0g sot-89 Marking L2 Packaging SOT23-5

    Untitled

    Abstract: No abstract text available
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		PDF NCP4687 NCP4687x 711AH NCP4687/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


    Original     		PDF MMBR911LT1/D MMBR911LT1 MPS911 226AA A/500 MMBR911LT1 MMBR911LT1/D*

    MMBR571LT1

    Abstract: 2S110
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


    Original     		PDF MMBR571LT1/D MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF5711LT1 2S110

    MRF5711LT1

    Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


    Original     		PDF MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF5711LT1 MRF571 11608A ZO 103 MA 75 603

    sot-23 marking 113

    Abstract: sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MMBR571LT1 MRF571 11608a
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


    Original     		PDF MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 sot-23 marking 113 sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MRF571 11608a

    MRF571

    Abstract: MMBR571LT1 MRF5711LT1 NF50 11608a J500
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


    Original     		PDF MMBR571LT1/D MMBR571LT1 MRF571 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF571 MRF5711LT1 NF50 11608a J500

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


    Original     		PDF MMBR571LT1/D MMBR571LT1 MPS571 MRF571 MRF5711LT1 226AA MRF5711LT1, MRF571) A/500 MMBR571LT1)

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    306 smd marking

    Abstract: IC Ensemble MARKING SMD TRANSISTOR DQ SMD TRANSISTOR MARKING 9f TRANSISTOR BC 187 TRANSISTOR SMD MARKING CODE W25 PN133 transistor smd marking H sot 23-5 marking code H5 SMD MARKING CODE transistor j3
    Text: P re li mi n a r y Da t a S h e e t , D S 1 . 2 , J a n u a r y 1 4 , 20 0 1 ABMP ATM Buffer Manager ABMP 2.1 DATACOM N e v e r s t o p t h i n k i n g . Edition 2001-14-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany


    Original     		PDF D-81541 306 smd marking IC Ensemble MARKING SMD TRANSISTOR DQ SMD TRANSISTOR MARKING 9f TRANSISTOR BC 187 TRANSISTOR SMD MARKING CODE W25 PN133 transistor smd marking H sot 23-5 marking code H5 SMD MARKING CODE transistor j3

    PXB 4325

    Abstract: ram 6164 IC Ensemble AA23 Hyb 4116 motorola analog ICs vol.2 P-BGA-352-1 epd driver ic ABM atm buffer manager PXB4325E
    Text: ICs for Communications ATM Buffer Manager ABM PXB 4330 Version 1.1 Data Sheet 09.99 DS 1 PXB 4330 Data Sheet Revision History: Current Version: 09.99 Previous Version: Preliminary Data Sheet 08.98 V 1.1 Page Page (in previous (in current Version) Version)


    Original     		PDF

    motorola J50

    Abstract: sot-23 MARKING GU MMBR911LT1 NF 034 transistor motorola 246 033 motorola
    Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This


    Original     		PDF MMBR911LT1/D MMBR911LT1 A/500 motorola J50 sot-23 MARKING GU MMBR911LT1 NF 034 transistor motorola 246 033 motorola

    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D

    LB 122 transistor To-92

    Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		PDF NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635

    NE856

    Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e


    Original     		PDF NE856 NE856 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR

    NE02107

    Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: MMBR911LT1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MMBR911LT1 Freescale Semiconductor, Inc. ARCHIVE INFORMATION • High Gain–Bandwidth Product fT = 7.0 GHz Typ @ 30 mA


    Original     		PDF MMBR911LT1/D MMBR911LT1 A/500 RF NPN POWER TRANSISTOR 2.5 GHZ MMBR911LT1

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


    Original     		PDF NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431