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    SOT-23 MARKING IY Search Results

    SOT-23 MARKING IY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING IY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTA1298

    Abstract: MARKING IY SOT sot-23 IY marking IY
    Text: SEMICONDUCTOR KTA1298 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking IY No. 1 Item Marking Device Mark I KTA1298 hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KTA1298 OT-23 KTA1298 MARKING IY SOT sot-23 IY marking IY

    Q62702-F979

    Abstract: BF599
    Text: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter


    Original     		PDF Q62702-F979 OT-23 Iy21e Q62702-F979 BF599

    marking POJ diode

    Abstract: MMBV432LTI MARKING YA SOT-23 MMBV432LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV432LT1/D DATA Diode MMBV432LTI This device is designed for FM tuning, general frequency control and tuning, or any top–of–th+line application requiring back–to–back diode configuration for minimum


    Original     		PDF MMBV432LT1/D MMBV432LTI OW1-2447 602-2W609 140W77 MMBV432LTl~ marking POJ diode MMBV432LTI MARKING YA SOT-23 MMBV432LT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SA1298 -100mA -800mA -500mA, -20mA -10mA, -10mA

    W609

    Abstract: MMBF5459LT1 SIP SOT 23 bergquist ge MARKING ZE SOT-23 KH SOT23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMBF5459LT1/D DATA — JFET Wansistor N-Channel I I I MMBF5459LTI I ? SOURCE G~TE Y 1DRAIN MNIMUM RATINGS Rating Drain-ate Voltage I Symbol Value Unit VDG 25 Vdc 1 THERMAL 1 [ .:?,ti CHARACTERISTICS


    Original     		PDF MMBF5459LT1/D MMBF5459LTI MMBF5459LT1 W1-2447 2662929B MMBF5459LTl~ W609 MMBF5459LT1 SIP SOT 23 bergquist ge MARKING ZE SOT-23 KH SOT23

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original     		PDF MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI

    pin configuration of ic 7448

    Abstract: marking HX 6pin IC+7448+truth+table data sheet IC 7448
    Text: Data Sheet PT7M7443-52 µP Supervisory Circuit | |


    Original     		PDF PT7M7443-52 PT7M7449 PT0289 pin configuration of ic 7448 marking HX 6pin IC+7448+truth+table data sheet IC 7448

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    diode tfk s 220

    Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
    Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


    OCR Scan     		PDF S1000 O888E T0126 15A3DIN diode tfk s 220 tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321

    TRANSISTOR BC 814

    Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
    Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF CFK10 569-GS TRANSISTOR BC 814 TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257

    marking 503

    Abstract: SMD MARKING RFC S503T S503TR
    Text: Tem ic S503T/S503TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s503t/s503tr S503T 22-Oct-97 S503TR marking 503 SMD MARKING RFC

    Untitled

    Abstract: No abstract text available
    Text: Tem ic S503T/S503TR Semiconductors MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF S503T/S503TR S503T S503TR D-74025 22-Oct-97

    smd transistor marking MZ

    Abstract: A19 SMD transistor smd transistor marking HA smd transistor marking A2 TRANSISTOR AO SMD MARKING S593T S593TR smd uhf transistor marking MZ smd transistor marking j9
    Text: Tem ic S593T/S593TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications VdD Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s593t/s593tr S593T S593TR 26-Mar-97 smd transistor marking MZ A19 SMD transistor smd transistor marking HA smd transistor marking A2 TRANSISTOR AO SMD MARKING smd uhf transistor marking MZ smd transistor marking j9

    SM 3119 N

    Abstract: SM 3119 Na smd transistor 637 3210 smd marking
    Text: Te m ic S593T/S593TR S e ni i c fi n d u c t o r s MOSMIC for TV-T\iner Prestage with 5 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. ^ Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF S593T/S593TR S593T S593TR 26-Mar-97 SM 3119 N SM 3119 Na smd transistor 637 3210 smd marking

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170


    OCR Scan     		PDF 023b3BQ 001bS43 BAV170 Q62702-A920 T-01-09 23b32Ã 001b54b

    SMD Transistor W03

    Abstract: SMD W03 w03 SMD marking W03 W03 sot 23 S503TRW
    Text: Tem ic S503TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s503trw S503TRW 22-Oct-97 SMD Transistor W03 SMD W03 w03 SMD marking W03 W03 sot 23

    S525T

    Abstract: No abstract text available
    Text: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode


    OCR Scan     		PDF S525T S525T 26-Mar-97

    SMD W03

    Abstract: W03 sot 23
    Text: Tem ic S503TRW S e m i c o n d u c t o r s MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF S503TRW S503TRW D-74025 22-Oct-97 SMD W03 W03 sot 23

    L25B

    Abstract: l31a L28B
    Text: tß Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, 1ixed-output voltage regulator de­ signed specifically to meet the requirements ot battery-powered applications. • ■ ■ ■


    OCR Scan     		PDF LP2980 OT-23 L25B l31a L28B

    marking JT

    Abstract: No abstract text available
    Text: tß Semiconductor LP2982 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA, 1ixed-output voltage regulator de­ signed to provide ultra low dropout and lower noise in battery powered applications. • ■


    OCR Scan     		PDF LP2982 marking JT

    fci dh 22

    Abstract: smd transistor 637 S593TRW smd transistor marking HA TRANSISTOR AO SMD MARKING Temic Semiconductors TELEFUNKEN 862
    Text: Tem ic S593TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M O SM IC - M O S M onolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF s593trw S593TRW -Oct-97 22-Oct-97 fci dh 22 smd transistor 637 smd transistor marking HA TRANSISTOR AO SMD MARKING Temic Semiconductors TELEFUNKEN 862

    TRANSISTOR 2N338

    Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
    Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.


    OCR Scan     		PDF -8-19500/69K MIL-S-19500/89D 2N337 2N338 MEL-8-19500, MEL-S-19500 TRANSISTOR 2N338 2N338 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4

    SMD transistor Marking 1Ss

    Abstract: telefunken ha 750 m transistor 1548 b A2 SMD IC MARKING smd transistor 1SS
    Text: T e m ic S593TRW Semiconductors MOSMIC for TV-Tùner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Applications Electrostatic sensitive device. ^ Observe precautions for handling. M Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


    OCR Scan     		PDF S593TRW S593TRW D-74025 22-Oct-97 SMD transistor Marking 1Ss telefunken ha 750 m transistor 1548 b A2 SMD IC MARKING smd transistor 1SS

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn