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    SOT-23 MARKING GH Search Results

    SOT-23 MARKING GH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING GH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBR2857

    Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBR930 MMBR931 MMBFU310 MMBR5179 BFS17 E1
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued RF SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN Device Marking Typ (GHz) •C (mA) MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR901 MMBR5031 MMBR2857 BFS17 BFS175 VCF (V)


    OCR Scan     		OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1 PDF

    S9018 SOT-23

    Abstract: s9018
    Text: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) — MARKING：J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 S9018 OT-23 400MHz S9018 SOT-23 s9018 PDF

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357 PDF

    MMBT3960

    Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2


    OCR Scan     		OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 PDF

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2 PDF

    transistor s parameters noise

    Abstract: NPN planar RF transistor 929 marking 23marking
    Text: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings


    Original     		D-74025 transistor s parameters noise NPN planar RF transistor 929 marking 23marking PDF

    sot-23 marking 7z

    Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
    Text: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1


    OCR Scan     		OT-23 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMBTA06LT1 sot-23 marking 7z MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1 PDF

    BFR92R

    Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
    Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23


    OCR Scan     		BFR92/BFR92R BFR92 BFR92R 26-Mar-97 sot 23 transistor 70.2 MAR 641 TRANSISTOR PDF

    telefunken IC

    Abstract: marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392
    Text: S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Marking: P2 Plastic case SOT 23 Absolute Maximum Ratings


    Original     		D-74025 telefunken IC marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392 PDF

    s869t

    Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
    Text: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		S869T/S869TR S869T S869TR D-74025 24-Apr-96 CASESOT-23 marking A1 TRANSISTOR Telefunken PDF

    SILICON PNP POWER TRANSISTOR b 869

    Abstract: S869T Sot-23R S869TR
    Text: Tem ic S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features • High blocking voltages • Transition frequency: f j = 1 GHz 95 10527 S869T Marking: 869T Plastic case SOT 23


    OCR Scan     		S869T S869TR SILICON PNP POWER TRANSISTOR b 869 Sot-23R PDF

    temic 0675

    Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
    Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23


    Original     		D-74025 temic 0675 MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244 PDF

    sot marking code ZS

    Abstract: No abstract text available
    Text: BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 775A SOT-23 LGs Q62702-F1250 1=B


    Original     		OT-23 Q62702-F1250 Tst500 S21/S12| Dec-12-1996 sot marking code ZS PDF

    vbfi

    Abstract: sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG
    Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B


    OCR Scan     		Q62702-F1225 OT-23 IS21el2 vbfi sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG PDF

    MARKING ra

    Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
    Text: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    OCR Scan     		BFQ81 21-Mar-97 MARKING ra LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor PDF

    BFR93

    Abstract: BFR93R
    Text: BFR93/BFR93R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1 Plastic case SOT 23


    Original     		BFR93/BFR93R BFR93 BFR93R D-74025 17-Apr-96 PDF

    BFR92R

    Abstract: BFR92 transistor bfr92
    Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23


    Original     		BFR92/BFR92R BFR92 BFR92R D-74025 17-Apr-96 transistor bfr92 PDF

    S869T

    Abstract: S869TR 1s869
    Text: S 869 T / S 869 T R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 2 94 9280 S869T Marking: 869T Plastic case SOT 23


    Original     		S869T S869TR D-74025 1s869 PDF

    temic 0675

    Abstract: telefunken ra 100 BFQ81
    Text: BFQ81 Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		BFQ81 D-74025 17-Apr-96 temic 0675 telefunken ra 100 BFQ81 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


    Original     		2SC3838 OT-23 QW-R206-052 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		2SC3356 OT-23 QW-R206-024 PDF

    MA 2831

    Abstract: No abstract text available
    Text: BFR 181 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 181 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		D-74025 MA 2831 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: 2SC3838L


    Original     		2SC3838 OT-23 2SC3838L QW-R206-052 PDF

    BFR 182 transistor

    Abstract: BFR 67 Transistor BFR 67
    Text: BFR 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 182 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter


    Original     		D-74025 BFR 182 transistor BFR 67 Transistor BFR 67 PDF