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    SOT-23 MARKING C3 Search Results

    SOT-23 MARKING C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KDS226

    Abstract: MARK C3 SOT23 KDS226 LOT C-312 Marking C3 SOT23 C3-12 C312 marking C3
    Text: SEMICONDUCTOR KDS226 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS226 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		KDS226 OT-23 KDS226 MARK C3 SOT23 KDS226 LOT C-312 Marking C3 SOT23 C3-12 C312 marking C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate Diodes SOT-23 SOT-23 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃


    Original     		OT-23 1SS226 PDF

    marking C3

    Abstract: 1SS226 MARKING C3
    Text: 1SS226 Switching Diodes SOT-23 Features — — — Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Dimensions in inches and (millimeters) MARKING: C3 Maximum Ratings ,Single Diode @TA=25℃


    Original     		1SS226 OT-23 100uA 100mA marking C3 1SS226 MARKING C3 PDF

    marking C3 sot-23

    Abstract: diode marking code C3 sot23 SOT-23 marking C3 code c3 sot-23 c3 sot-23 1SS226 1SS196 sot-23 marking code pd 1SS226 c3 marking code c3 sot 23
    Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS226 FEATURES Pb Lead-free z Fast switching. z Power dissipation. PD:150mW Tamb=25℃ APPLICATIONS z High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking


    Original     		1SS226 150mW OT-23 BL/SSSDC007 1SS196 marking C3 sot-23 diode marking code C3 sot23 SOT-23 marking C3 code c3 sot-23 c3 sot-23 1SS226 1SS196 sot-23 marking code pd 1SS226 c3 marking code c3 sot 23 PDF

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108 PDF

    KSC3488

    Abstract: KSC853 KSA953 KSC815
    Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )


    OCR Scan     		OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 BCW31 O-92S KSC3488 KSC853 KSA953 KSC815 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)


    OCR Scan     		0Q11524 OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 O-92S PDF

    BAR43/D95

    Abstract: marking db2 marking db2 bar43c BAR43 BAR43A BAR43C BAR43S
    Text: BAR43/A/C/S Schottky Diodes Connection Diagram MARKING SOT-23 BAR43 D95 BAR43C DB2 BAR43A DB1 BAR43S DA5 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 30 V IF AV Average Rectified Forward Current


    Original     		BAR43/A/C/S OT-23 BAR43 BAR43C BAR43A BAR43S BAR43/D95 marking db2 marking db2 bar43c PDF

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR43/A/C/S Schottky Diodes Connection Diagram MARKING SOT-23 BAR43 D95 BAR43C DB2 BAR43A DB1 BAR43S DA5 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 30 V IF AV Average Rectified Forward Current


    Original     		BAR43/A/C/S OT-23 BAR43 BAR43C BAR43A BAR43S PDF

    SS9013 SOT-23

    Abstract: KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 1.1.1 General Purpose Transistors SOT-23 Type Transistors C ondition Device and Polarity Marking NPN KST06(1G) KST050H) KSC1623(C1X> PNP VcEO (V) lc (A) VCE lc (V) (mA) MIN 80 0.5 1 0.5 1 100 100


    OCR Scan     		OT-23 KST812M4 KST812M5 KST812M6 KST812M7 KSK211 O-92S KSK161 KSK596 KSK30 SS9013 SOT-23 KSC1330 transistor J1x SS9014 sot-23 KSC2880 M74040 KSC2884 Marking BA SOT89 KSP44 kst2222 PDF

    b631 transistor

    Abstract: S3 marking DIODE b631 Q62702-B631
    Text: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23


    Original     		Q62702-B631 OT-23 Jan-09-1997 b631 transistor S3 marking DIODE b631 Q62702-B631 PDF

    Untitled

    Abstract: No abstract text available
    Text: BBY 51 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23


    Original     		VPS05161 OT-23 Oct-05-1999 EHD07128 PDF

    Untitled

    Abstract: No abstract text available
    Text: BBY 51 Silicon Tuning Diode 3  High Q hyperabrupt dual tuning diode  Designed for low tuning voltage operation  For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23 Maximum Ratings


    Original     		VPS05161 OT-23 Dec-07-2000 EHD07128 PDF

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89 PDF

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM PDF

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA PDF

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G02 353/SC V = Device Code PDF

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		MC74VHC1G126 353/SC marking CODE W2D marking w2d PDF

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D PDF

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 PDF

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		MC74VHC1G00 353/SC V = Device Code PDF

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08 PDF