LMBTA42LT1
Abstract: LMBTA42LT1G LMBTA43LT1 LMBTA43LT1G 1d sot-23
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1 LMBTA43LT1 ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 1D SOT-23 3000/Tape&Reel 1D Pb-Free SOT-23 3000/Tape&Reel M1E SOT-23 3000/Tape&Reel
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LMBTA42LT1
LMBTA43LT1
OT-23
3000/Tape
LMBTA42LT1
LMBTA42LT1G
LMBTA43LT1
LMBTA43LT1G
1d sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
BAS70/-04/-05/-06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
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PDF
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marking 04 sot23
Abstract: BAS70 BAS70-04 BAS70-05 BAS70-06 marking sot23 76 diode marking 74
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAS70/-04/-05/-06 SWITCHING DIODE SOT-23 FEATURES z Low Turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75
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OT-23
BAS70/-04/-05/-06
OT-23
BAS70
BAS70-04
BAS70-05
BAS70-06
marking 04 sot23
marking sot23 76
diode marking 74
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel
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LMBTA42LT1G
LMBTA43LT1G
OT-23
3000/Tape
LMBTA42LT3G
10000/Tape
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PDF
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5B1 SOT23
Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G
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LBC807-16LT1
LBC807-16LT1G
OT-23
LBC807-40LT1
LBC807-40LT1G
LBC807-25LT1
LBC807-25LT1G
5B1 SOT23
5B1 SOT-23
sot23 marking 5c1
marking 5b1
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QS sot-23
Abstract: LBAS16LT1 LBAS16LT1G A6 t sot23
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1 DEVICE MARKING AND ORDERING INFORMATION Device LBAS16LT1 LBAS16LT1G Marking Package Shipping A6 SOT-23 3000/Tape&Reel A6 Pb-Free SOT-23 3000/Tape&Reel 3 1 2 MAXIMUM RATINGS
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LBAS16LT1
OT-23
3000/Tape
LBAS16LT1G
LBAS16LT1-3/3
QS sot-23
LBAS16LT1
LBAS16LT1G
A6 t sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating
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LBAS16LT1G
OT-23
3000/Tape
LBAS16LT3G
10000/Tape
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1N914 SOT-23
Abstract: 2L SOT-23 1N914 LMBT5401LT1 LMBT5401LT1G MARKING .01 SOT
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1 ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Package Shipping 1 LMBT5401LT1 SOT-23 3000/Tape&Reel LMBT5401LT1G Pb-Free SOT-23 3000/Tape&Reel 2 SOT– 23
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LMBT5401LT1
OT-23
3000/Tape
LMBT5401LT1G
LMBT5401LT1-5/5
1N914 SOT-23
2L SOT-23
1N914
LMBT5401LT1
LMBT5401LT1G
MARKING .01 SOT
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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MARKING 1P
Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
MARKING 1P
MMBT2222A
MMBT2907A
1p sot23
TRANSISTOR 1P SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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Original
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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Original
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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1p1 transistor
Abstract: 3DK2222A MMBT2907ALT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1
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Original
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OT-23
3DK2222A
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
1p1 transistor
3DK2222A
MMBT2907ALT1
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PDF
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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Original
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OT-23
MMBT2222A
OT-23
MMBT2907A)
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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Original
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OT-23
MMBT2222ALT1
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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Original
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER Marking: M2B 3. COLLECTOR
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OT-23
MMBT2907
MMBT2222)
-150mA
-500mA
-150mA
-15mA
-500mA
-50mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Transistor hFE CLASSIFICATION Marking CE
Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
Transistor hFE CLASSIFICATION Marking CE
marking 1P sot-23
Application of MMBT2907A
sot-23 1P F
MMBT2222A
MMBT2907A
MARKING 1P
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marking 1p sot23
Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
150mA
marking 1p sot23
TRANSISTOR 1P SOT23
1p transistor sot23
1p transistor
sot-23 1P F
marking 1p transistor sot23
TRANSISTOR 1P
Marking 1P
1P sot23
sot23 1p
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PDF
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