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    SOT-23 MARKING A2X Search Results

    SOT-23 MARKING A2X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING A2X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Zowie Technology Corporation Monolithic Dual Switching Diode 3 MMBD2836GH CATHODE 1 ANODE 3 1 2 2 CATHODE SOT-23 ORDERING INFORMATION Marking Shipping LMBD2835LT1G Device A3X 3000/Tape&Reel LMBD2835LT3G A3X 10000/Tape&Reel LMBD2836LT1G A2X 3000/Tape&Reel LMBD2836LT3G


    Original     		PDF MMBD2836GH OT-23 LMBD2835LT1G 3000/Tape LMBD2835LT3G 10000/Tape LMBD2836LT1G LMBD2836LT3G

    LMBD2835LT1

    Abstract: LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G Diode A3X
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE • Pb-Free Package is available. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G A3X 10000/Tape&Reel LMBD2836LT1G A2X 3000/Tape&Reel


    Original     		PDF LMBD2835LT1G LMBD2836LT1G 3000/Tape LMBD2835LT3G 10000/Tape LMBD2836LT3G LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G Diode A3X

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494

    MF sot-23

    Abstract: sot-23 marking a2x MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G MMBD2835LT1 SOT-23 code marking mf marking a2x sot23 Diode A3X
    Text: MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current Symbol Value Unit VR 35 75 Vdc IF 100 mAdc PD 225 mW 1.8 mW/°C


    Original     		PDF MMBD2835LT1, MMBD2836LT1 MMBD2835LT1 MF sot-23 sot-23 marking a2x MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G MMBD2835LT1 SOT-23 code marking mf marking a2x sot23 Diode A3X

    marking 556C

    Abstract: No abstract text available
    Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit Total Device Dissipation FR− 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW


    Original     		PDF MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MMBD2835LT1 marking 556C

    MMBD2835LT1

    Abstract: MMBD2836LT1 sot-23 marking a2x
    Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA


    Original     		PDF MMBD2835LT1 MMBD2836LT1 236AB) r14525 MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1 sot-23 marking a2x

    MMBD2835LT1

    Abstract: MMBD2836LT1
    Text: MOTOROLA Order this document by MMBD2835LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 3 1 2 CATHODE 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol


    Original     		PDF MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1 236AB) MMBD2835LT1 MMBD2836LT1

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    MMBD2835LT1

    Abstract: MMBD2836LT1
    Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W


    Original     		PDF MMBD2835LT1 MMBD2836LT1 r14525 MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1

    onsemi 035 diode

    Abstract: MMBD2835LT1 MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G DIODE SOT-23 PACKAGE
    Text: MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current Symbol Value Unit VR 35 75 Vdc IF 100 mAdc


    Original     		PDF MMBD2835LT1, MMBD2836LT1 MMBD2835LT1 MMBD2835LT1/D onsemi 035 diode MMBD2835LT1 MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G DIODE SOT-23 PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G 236AB) MMBD2836LT1G MMBD2835LT1/D

    SMMBD2835LT1G

    Abstract: No abstract text available
    Text: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G AEC-Q101 236AB) MMBD2836LT1G MMBD2835LT1/D

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    IR3575

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc


    Original     		PDF MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MAR218A MSC1621T1 MSC2404 MSD1819A MV1620 IR3575 BC237

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA


    Original     		PDF MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MMBD2835LT1

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556 300 mW/°C °C/W mW R θ JA


    Original     		PDF MMBD2835LT1 MMBD2836LT1 236AB)

    LMBD2836LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FEATURE z We declare that the material of product compliance with RoHS requirements. LMBD2835LT1G S-LMBD2835LT1G LMBD2836LT1G S-LMBD2836LT1G z S- Prefix for Automotive and Other Applications Requiring


    Original     		PDF LMBD2835LT1G S-LMBD2835LT1G LMBD2836LT1G S-LMBD2836L AEC-Q101 3000/Tape 10000/Tape LMBD2836LT1G

    resistor G202

    Abstract: Diode A3X MMBD2835LT1 MMBD2836LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556


    Original     		PDF MMBD2835LT1 MMBD2836LT1 236AB) resistor G202 Diode A3X MMBD2835LT1 MMBD2836LT1

    Diode A3X

    Abstract: SOT-23 MARK A2.X lt1 switch LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G LMBD2836
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE z We declare that the material of product compliance with RoHS requirements. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G


    Original     		PDF LMBD2835LT1G LMBD2836LT1G 3000/Tape LMBD2835LT3G 10000/Tape LMBD2836LT3G Diode A3X SOT-23 MARK A2.X lt1 switch LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G LMBD2836

    A1xx SOT-23

    Abstract: No abstract text available
    Text: MC33349 Lithium Battery Protection Circuit for One Cell Battery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of


    Original     		PDF MC33349 MC33349/D A1xx SOT-23

    A1xx SOT-23

    Abstract: cell phone detector circuit diagram
    Text: Back MC33349 Lithium Battery Protection Circuit for One Cell Battery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of


    Original     		PDF MC33349 r14525 MC33349/D A1xx SOT-23 cell phone detector circuit diagram

    cell phone detector circuit diagram

    Abstract: A1xx SOT-23
    Text: MC33349 Lithium Battery Protection Circuit for One Cell Battery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of


    Original     		PDF MC33349 r14525 MC33349/D cell phone detector circuit diagram A1xx SOT-23