702E
Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT
|
Original
|
2N7002E
OT-323
SRT84W
2N7002S
OT-363
SRT84S
2N7002
OT-23
702E
MARKING 5F SOT363
MOSFET N SOT-23
MOSFET SOT-23
2N7002 SOT-23
transistor 702E
sot-23 marking E
sot-23 marking 113
MARKING ZT SOT23
MARKING ZT
|
PDF
|
sot 23 70.2
Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code
|
OCR Scan
|
2N7002
OT-23
OT-23:
sot 23 70.2
sot-23 MARKING CODE 70.2
SOT-23 Marking code MU
sot23 702
sot-23 702
7002 SOT-23
sot-23 MARKING CODE GS
702 sot 23
diode marking code MU
702W
|
PDF
|
SAS SOT23
Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
Text: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on
|
OCR Scan
|
OT-23
SAS SOT23
SAs SOT-23 marking
BSS100
BSS123
marking BSs sot23
SOT-23 marking AFE
MARKING code VG
|
PDF
|
702 sot23
Abstract: No abstract text available
Text: SOT-23 TRANSISTORS continued TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain Device Switching Time V GS(th) R DS(on) @ I d Marking Ohm mA BVqss Volts
|
OCR Scan
|
OT-23
MMBF170LT1
BSS123LT1
2N7002LT1
702 sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT1031K 640 mA, 60V, RDS on =2Ω Elektronische Bauelemente N-Channel MOSFET FEATURES Simple Drive Requirement SOT-23 Drain Small Package Outline Gate RoHS Compliant Source A L 3 1 V B S Top View 2 G C MARKING: 702E H D J K Dim Min Max A 2.800 3.040 B 1.200
|
Original
|
MMBT1031K
OT-23
01-Jun-2002
MMBT1031
|
PDF
|
sot-23 MARKING CODE 70.2
Abstract: marking 702 sot-23 sot-23 marking 702 sot-23 702 2N7002 MARKING 2N7002 MARKING 702 2N7002 p-channel SOT-23 20V
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
|
Original
|
2N7002
O-236AB:
O-236AB*
OT-23.
sot-23 MARKING CODE 70.2
marking 702 sot-23
sot-23 marking 702
sot-23 702
2N7002 MARKING
2N7002 MARKING 702
2N7002
p-channel SOT-23 20V
|
PDF
|
2N7002
Abstract: 2N7002 MARKING 712
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
|
Original
|
2N7002
O-236AB:
O-236AB*
OT-23.
2N7002
2N7002 MARKING 712
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
|
OCR Scan
|
O-236AB*
2N7002
O-236AB:
OT-23.
|
PDF
|
150X1
Abstract: No abstract text available
Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
|
OCR Scan
|
2N7002
OT-23
VNDS06
150X1,
150X1
|
PDF
|
2N7002 MARKING 712
Abstract: 2N7002 800mA SOT-23 Marking code MU
Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
|
OCR Scan
|
2N7002
O-236AB*
O-236AB:
OT-23.
2N7002 MARKING 712
2N7002 800mA
SOT-23 Marking code MU
|
PDF
|
MOSFET n0 sot-23
Abstract: TN0200T
Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) 20 ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TN0200T
O-236
OT-23)
S-44204--Rev.
31-Mar-95
MOSFET n0 sot-23
TN0200T
|
PDF
|
TP0101T
Abstract: No abstract text available
Text: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
|
Original
|
TP0101T
O-236
OT-23)
S-44205--Rev.
31-Mar-95
TP0101T
|
PDF
|
TP0101T
Abstract: TP0101TS
Text: TP0101T/TS P-Channel Enchancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 Top View G 1 3 S 2 D TP0101T (P0)* TP0101TS (PS)* *Marking Code for TO-236
|
Original
|
TP0101T/TS
O-236
OT-23)
TP0101T
TP0101TS
S-52430--Rev.
05-May-97
TP0101T
TP0101TS
|
PDF
|
TN0200T
Abstract: TN0200TS
Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features
|
Original
|
TN0200T/TS
O-236
OT-23)
TN0200T
TN0200TS
S-52426--Rev.
14-Apr-97
TN0200T
TN0200TS
|
PDF
|
|
TN0200T
Abstract: MOSFET n0 sot-23 TN0200TS
Text: TN0200T/TS N-Channel Enhancement-Mode MOSFET TO-236 SOT-23 Product Summary ID (A) rDS(on) (W) W TN0200T 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 Top View TN0200TS G 1 3 S TN0200T (N0)* TN0200TS (NS)* *Marking Code for TO-236 D 2 Features
|
Original
|
TN0200T/TS
O-236
OT-23)
TN0200T
TN0200TS
S-52426--Rev.
14-Apr-97
TN0200T
MOSFET n0 sot-23
TN0200TS
|
PDF
|
ZVN3320F
Abstract: ZVN3320
Text: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360
|
OCR Scan
|
OT-23
ZVN3320F
ZVN3310F
ZVN4106F
ZVN3306F
2N7002
VN10LF
BS170F
BSS13
ZVP1320F
ZVN3320
|
PDF
|
ZVN4206E
Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Text: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA
|
OCR Scan
|
OT-23
ZVN3320F
BSS123
ZVN3310F
ZVN4106F
ZVN3306F
2N7002
VN10LF
BS170F
BSS138+
ZVN4206E
bss123 marking sa
B55123
BSS138
|
PDF
|
BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
|
Original
|
MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
|
PDF
|
BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
|
Original
|
MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
|
PDF
|
MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
|
Original
|
226AA)
226AE)
MMSD1000T1
236AB
MMBF0201NLT1
MMBF0202PLT1
MMBF4856
pin configuration NPN transistor BC547 sot-23
BC337/BC327
BC547 sot package sot-23
t6661
bipolar transistor bc107
MPS6595
zt751
FET Transistor Guide
BS107 MOTOROLA
|
PDF
|
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
|
Original
|
ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
|
Original
|
L2N7002LT1G
236AB)
|
PDF
|
sot-363 702
Abstract: MARKING 46 SOT-363 SOT 363 marking m4 46 sot363 marking 702 sot363
Text: ON Semiconductort MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and
|
Original
|
OT-363
OT-23
MBD110DWT1
MBD330DWT1
MBD770DWT1
419B-01,
OT-363
sot-363 702
MARKING 46 SOT-363
SOT 363 marking m4
46 sot363
marking 702 sot363
|
PDF
|
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
|
Original
|
DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
|
PDF
|