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    SOT-23 MARKING 350 Search Results

    SOT-23 MARKING 350 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING 350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25


    Original     		PDF OT-23 BAS40/-04/-05/-06 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage


    Original     		PDF OT-23 BAS40/-04/-05/-06 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage


    Original     		PDF OT-23 037TPY 950TPY 550REF 022REF

    diode marking 5D

    Abstract: marking 5d MMBD914 marking 5D diode
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD914 SWITCHING DIODES FEATURES High-speed switching diode MARKING: 5D Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage


    Original     		PDF OT-23 OT-23 MMBD914 150mA MMBD914 diode marking 5D marking 5d marking 5D diode

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    marking A1

    Abstract: BAW56
    Text: BAW56 Surface Mount Switching Diode SOT-23 Features — For high-speed switching Applications. — Common anode Applications — High speed switching application. Dimensions in inches and millimeters Ordering Information Type No. Marking Package Code A1 SOT-23


    Original     		PDF BAW56 OT-23 BAW56 150mA marking A1

    IR5A

    Abstract: MMBD4148A-5H MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE CA SOT 23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6


    Original     		PDF OT-23 MMBD4148A/SE/CC/CA OT-23 MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE IR5A MMBD4148A-5H MMBD4148CA MMBD4148CC MMBD4148SE CA SOT 23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1505A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A15 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1505A 100mA 300mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1501A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A11 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1501A 100mA 300mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SOT-23 SWITCHING DIODES FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MARKING: MMBD4148A:5H MMBD4148CA :D6


    Original     		PDF OT-23 MMBD4148A/SE/CC/CA OT-23 MMBD4148A MMBD4148CA MMBD4148CC MBD4148SE

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1504A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A14 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit


    Original     		PDF OT-23 OT-23 MMBD1504A 100mA 300mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCX19 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Low voltage 2. EMITTER 3. COLLECTOR MARKING : U1 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-23 BCX19 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1503A FEATURES  Low Leakage  High Conductance MARKING: A13 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit VR DC Blocking Voltage


    Original     		PDF OT-23 OT-23 MMBD1503A 100mA 300mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3 SOT-23 SCHOTTKY BARRIER DIODE FEATURES  High Switching Speed  Low Forward Voltage MARKING: D95 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Value


    Original     		PDF OT-23 OT-23 100mA

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    Transistor 2TY

    Abstract: Transistor S8550 2TY .2TY sot-23 Marking 2TY .2ty transistor 2ty transistor 2TY marking s8550 sot-23 S8050 2TY S8550 sot 23
    Text: S8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complimentary to S8050 — Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF S8550 OT-23 OT-23 S8050 -500mA -500mA, -50mA -20mA Transistor 2TY Transistor S8550 2TY .2TY sot-23 Marking 2TY .2ty transistor 2ty transistor 2TY marking s8550 sot-23 S8050 2TY S8550 sot 23

    marking 1p sot23

    Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
    Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p

    j3y transistor

    Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
    Text: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF S8050 OT-23 OT-23 S8550 500mA 30MHz j3y transistor .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT


    Original     		PDF OT-23-6LPlastic-Encapsulate CJ2045 OT-23-6L

    SOT23 .K2D

    Abstract: 417 TRANSISTOR
    Text: MMBTA13,14 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO


    Original     		PDF MMBTA13 OT-23 OT-23 MMBTA14 100mA SOT23 .K2D 417 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3S SOT-23 SCHOTTKY BARRIER DIODE FEATURES  Fast Switching Speed  Low Forward Voltage  Small Plastic Package MARKING: DA5 MAXIMUM RATINGS Ta=25℃ unless otherwise noted


    Original     		PDF OT-23 OT-23 100mA