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    SOT-23 MARK 3B TRANSISTOR Search Results

    SOT-23 MARK 3B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARK 3B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    PN918

    Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
    Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT918 PN918 OT-23 PN918 MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor

    y 331 Transistor

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 y 331 Transistor

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144

    mmbt918

    Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch

    MMBT918

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    Original     		PDF PN918 MMBT918 OT-23 100MHz MMBT918

    BC557

    Abstract: No abstract text available
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC557

    BC557

    Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 Temperat30 BC557 BC557 bc556 transistor BC559 BC856 on semiconductor

    BC857A BC857b difference

    Abstract: BC856 BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC857A BC857b difference BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1

    BC856

    Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC856 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856ALT1 Series MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0 V


    Original     		PDF LBC856ALT1 LBC856 LBC857 LBC858, LBC859 LBC856ALT1

    MAX4105

    Abstract: MAX4304 MAX4104EUK-T MAX4305ESA MAX4104
    Text: 19-4757; Rev 3; 10/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 740MHz, Low-Noise, Low-Distortion Op Amps in SOT23-5 The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in a SOT23 package. The unity-gain-stable MAX4104


    Original     		PDF 740MHz, OT23-5 MAX4104/MAX4105/MAX4304/MAX4305 MAX4104 625MHz MAX4304, 730MHz MAX4105 410MHz 400V/sec MAX4304 MAX4104EUK-T MAX4305ESA MAX4104

    MAX4105

    Abstract: MAX4304 MAX4104 MAX4304/MAX4305
    Text: 19-4757; Rev 3; 10/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 740MHz, Low-Noise, Low-Distortion Op Amps in SOT23-5 The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in a SOT23 package. The unity-gain-stable MAX4104


    Original     		PDF 740MHz, OT23-5 MAX4104/MAX4105/MAX4304/MAX4305 MAX4104 625MHz MAX4304, 730MHz MAX4105 410MHz 400V/sec MAX4304 MAX4104 MAX4304/MAX4305

    MAX1719

    Abstract: 1n4148 sot23 MAX868 MAX1719EUT MAX1720 power MOSFET sot23-6 C2S SOT23 6pin lcd inverter
    Text: 19-1439; Rev 2; 4/04 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.


    Original     		PDF MAX1719/MAX1720/MAX1721 MAX1720 12kHz, MAX1719/MAX1721 125kHz. MAX1719/ MAX1720/MAX1721 MAX1719 1n4148 sot23 MAX868 MAX1719EUT power MOSFET sot23-6 C2S SOT23 6pin lcd inverter

    MAX1719

    Abstract: No abstract text available
    Text: 19-1439; Rev 2; 4/04 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.


    Original     		PDF MAX1719/MAX1720/MAX1721 MAX1720 12kHz, MAX1719/MAX1721 125kHz. MAX1719/ MAX1720/MAX1721 MAX1719

    voltage inverters

    Abstract: MAX1719 power MOSFET sot23-6 MAX1720 MAX868
    Text: 19-1439; Rev 1; 5/99 SOT23, Switched-Capacitor Voltage Inverters with Shutdown The ultra-small MAX1719/MAX1720/MAX1721 monolithic, CMOS charge-pump inverters accept input voltages ranging from +1.5V to +5.5V. The MAX1720 operates at 12kHz, and the MAX1719/MAX1721 operate at 125kHz.


    Original     		PDF MAX1719/MAX1720/MAX1721 MAX1720 12kHz, MAX1719/MAX1721 125kHz. MAX1719/ MAX1720/MAX1721 voltage inverters MAX1719 power MOSFET sot23-6 MAX868

    MAX4105

    Abstract: No abstract text available
    Text: 19-4757; Rev 3; 10/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO 740MHz, Low -Noise, Low -Distortion Op Amps in SOT23-5 The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in a SOT23 package. The unity-gain-stable MAX4104


    Original     		PDF 740MHz, OT23-5 MAX4104/MAX4105/MAX4304/MAX4305 MAX4104 625MHz MAX4304, 730MHz 000V/Â MAX4105 410MHz

    CMR SOT23-5

    Abstract: MAX4104EUK-T MAX4105 MAX4304 MAX4104 SR285 PAY SOT23-5 MAX4104EUK
    Text: MAX4104 DS 8/26/98 4:44 PM Page 1 19-4757; Rev 2; 6/98 KIT ATION EVALU LE B A IL A AV 740MHz, Low-Noise, Low-Distortion Op Amps in SOT23-5 General Description The MAX4104/MAX4105/MAX4304/MAX4305 op amps feature ultra-high speed, low noise, and low distortion in


    Original     		PDF MAX4104 740MHz, OT23-5 MAX4104/MAX4105/MAX4304/MAX4305 MAX4104 625MHz MAX4304, 730MHz MAX4105 410MHz CMR SOT23-5 MAX4104EUK-T MAX4304 SR285 PAY SOT23-5 MAX4104EUK

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    OCR Scan     		PDF MMBT918 PN918 OT-23 400il, PN918

    AC 187 npn transistor TO 1

    Abstract: MMBT918 PN918
    Text: u c t o r " PN918 C MMBT918 TO-92 SOT-23 B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R


    OCR Scan     		PDF PN918 MMBT918 OT-23 AC 187 npn transistor TO 1 MMBT918 PN918