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    SOT-23 L21 Search Results

    SOT-23 L21 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 L21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L37B

    Abstract: 1E475ZY5U-C304 L00A L00B L21B l01b marking L00B LP2980 l13a l21a
    Text: LP2980 LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 Package Literature Number: SNOS733L LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 Package General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications.


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    PDF LP2980 LP2980 OT-23 SNOS733L L37B 1E475ZY5U-C304 L00A L00B L21B l01b marking L00B l13a l21a

    SMD4148

    Abstract: MMBD1702 TMPD4148 5d marking BAV70-A4 JS29 MMBD1503A 5d surface mount diode BAS16 5H TMPD6050
    Text: SURFACE MOUNT SWITCHING DIODES Cases: SOT-23 Molded Plastic Operating Temperature:-65℃to150℃ Min. Repetitive Max. Fwrd. Part No. Cross- Marking Rev. Voltage Current Vrrm V IF(mA) Reference BAS21 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1503A


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    PDF OT-23 -65to150 BAS21 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1503A SMD4148 MMBD1702 TMPD4148 5d marking BAV70-A4 JS29 MMBD1503A 5d surface mount diode BAS16 5H TMPD6050

    Untitled

    Abstract: No abstract text available
    Text: BAS31 BAS31 Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current 200


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    PDF BAS31 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BAS31 VISHAY Vishay Semiconductors Dual In-Series General-Purpose Controlled-Avalanche Diode Features • Silicon Epitaxial Planar Diode • For general purpose switching applications 2 3 1 Mechanical Data 1 Case: SOT-23 Plastic Package Weight: approx. 8.8 mg


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    PDF BAS31 OT-23 BAS31 BAS31-GS18 BAS31-GS08 D-74025 26-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: BAS31 VISHAY Vishay Semiconductors Dual In-Series General-Purpose Controlled-Avalanche Diode Features • Silicon Epitaxial Planar Diode • For general purpose switching applications 2 3 1 Mechanical Data 1 Case: SOT-23 Plastic Package Weight: approx. 8 mg


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    PDF BAS31 OT-23 BAS31 BAS31-GS18 BAS31-GS08 D-74025 23-Mar-04

    88128

    Abstract: BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08
    Text: BAS31 Vishay Semiconductors New Product formerly General Semiconductor Dual In-Series General-Purpose Controlled-Avalanche Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33)


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    PDF BAS31 O-236AB OT-23) OT-23 O-236AB) 400mA 15-May-02 88128 BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08

    BAS31

    Abstract: BAV19
    Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAV19 BAS31

    BAS31

    Abstract: No abstract text available
    Text: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAS31

    33L21

    Abstract: BAS31 BAV19 GENERAL PURPOSE DIODE
    Text: BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


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    PDF BAS31 OT-23 BAV19 33L21 BAS31 GENERAL PURPOSE DIODE

    5d surface mount diode

    Abstract: JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


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    PDF OT-23 LL4148 DL4148 500mW DL4448 LL4448 OT-23 C3B01 5d surface mount diode JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148

    LL4148 melf

    Abstract: DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


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    PDF OT-23 LL4148 DL4148 500mW DL4448 LL4448 OT-23 C3B01 LL4148 melf DIODE SOT-23 PACKAGE JS29 bas16 cross reference DL4148 BAS21 DL4448 LL4148 LL4448 MMBD1402

    BAS29

    Abstract: BAS31 BAS35
    Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21


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    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31

    85724

    Abstract: No abstract text available
    Text: BAS31 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Serial Features • Silicon Epitaxial Planar Diode • For general purpose switching applications 2 3 1 Mechanical Data 1 Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:


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    PDF BAS31 OT-23 BAS31 BAS31-GS18 BAS31-GS08 D-74025 08-Jul-04 85724

    DIODE SOT-23 PACKAGE

    Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


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    PDF OT-23 LL4148 DL4148 500mW LL4448 DL4448 OT-23 Part54G DBS155G DIODE SOT-23 PACKAGE dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402

    smd L21

    Abstract: BAS29 BAS31 BAS35
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS


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    PDF ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21

    BAS29

    Abstract: BAS31 BAS35 smd L21
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.


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    PDF OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29­ BAS31 smd L21

    l01b

    Abstract: L37B l02B SOT l31a L01A l37a l00b l01b regulator L0NA siemens tantalum capacitor
    Text: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 Package General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process,


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    PDF LP2980 OT-23 LP2980 l01b L37B l02B SOT l31a L01A l37a l00b l01b regulator L0NA siemens tantalum capacitor

    transistor l33 sot 23

    Abstract: voltage detector IC MARKING CODE l22 TK71623 TK716xx
    Text: TK716xx LOW DROPOUT VOLTAGE REGULATOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ APPLICATIONS Available in ± 2.0 % or ± 1.0 % Output Tolerance Active High On/Off Control Very Low Quiescent Current Very Low Dropout Voltage Reverse Bias Protection Miniature Package SOT-23-5


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    PDF TK716xx OT-23-5) TK716xx OT-23-5 IC-216-TK716xx 0798O0 transistor l33 sot 23 voltage detector IC MARKING CODE l22 TK71623

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6

    SMD diode C5C

    Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
    Text: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    PDF BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A SMD diode C5C smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Text: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


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    PDF BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm

    BAS31

    Abstract: BAV19 259-C
    Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*


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    PDF OT-23 BAS31 BAV19 bS01130 BAS31 259-C

    Untitled

    Abstract: No abstract text available
    Text: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.


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    PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29

    Untitled

    Abstract: No abstract text available
    Text: _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two


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    PDF BAS29 BAS31 BAS35 BAS29, BAS31 BAS35 OT-23 BAS29