2tk transistor
Abstract: No abstract text available
Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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MMBT4403K
MMBT4403K
OT-23
2tk transistor
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2FK transistor
Abstract: No abstract text available
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
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Untitled
Abstract: No abstract text available
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
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SOT-23 2xk
Abstract: 2xk transistor npn
Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO
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Original
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MMBT4401K
MMBT4401K
OT-23
SOT-23 2xk
2xk transistor npn
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2FK transistor
Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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Original
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MMBT2907AK
MMBT2907AK
OT-23
2FK transistor
fairchild sot-23 Device Marking pc
PNP Epitaxial Silicon Transistor sot-23
a/smd 2fk transistor
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PDF
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transistor 1AK
Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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Original
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MMBT3904K
MMBT3904K
OT-23
transistor 1AK
1AK marking transistor
1ak transistor
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K2X pnp
Abstract: MMBT3904 MMBT4401 MMBT4403
Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 -H .h -a TO P VIEW Mechanical Data_ Case: SOT-23, Molded Plastic
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OCR Scan
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MMBT4401
MMBT4403)
OT-23,
MIL-STD-202,
OT-23
100MHz
150mA,
DS30039
MMBT4401
K2X pnp
MMBT3904
MMBT4403
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sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
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OCR Scan
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OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
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Untitled
Abstract: No abstract text available
Text: OPA337 OPA2337 B U R R -B R O W N OPA33S" OPA2338" M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifierMSeries FEATURES DESCRIPTION • M/croSIZE PACKAGES: SOT-23-5<1 SOT-23-8 • SINGLE-SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT SWING • FET-INPUT: lB = 10pA max
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OCR Scan
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OPA337
OPA2337
OPA33S"
OPA2338"
OT-23-8
OPA337:
OPA338:
120dB
525jiA/amp
OPA337
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ltkh
Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
Text: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package
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OCR Scan
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lt1615/lt1615-1
OT-23
250mV
300mA
OT-23
DE9CRIFT10n
LT1615
a350mA
LT1615-1
ltkh
marking LTIZ
LGH3C100K24
LTIZ
LTIZ SOT
A47 SOT23
R 4R7 inductor
SOf-23
LMK316BJ475
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Untitled
Abstract: No abstract text available
Text: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 TOP VIEW Mechanical Data_ • • • • 1e 1 C ase: SO T-23, M olded Plastic
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OCR Scan
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BAS70/
OT-23
300ns,
DS11007
BAS70/-04/-05/-06
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PDF
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Untitled
Abstract: No abstract text available
Text: IC IS BAT54 /A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 u Mechanical Data_ • • • • • C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,
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OCR Scan
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BAT54
OT-23
100mA
DS11005
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 II t TOP VIEW • • • u 4 r;| C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,
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OCR Scan
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BAS40/
OT-23
BAS40-04
BAS40-05
BAS40-06
BAS40
300ns,
DS11006
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage
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OCR Scan
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00G723G
MMBA811C7
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltaae Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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KST5086/5087
OT-23
KST5086
KST5087
100KHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current Collector Dissipation Storage Temperature
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OCR Scan
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MMBT3906
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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KST3906
OT-23
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PDF
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MMBv105
Abstract: MMBV105G MMBV105GL MMBV105GLT1
Text: SILIC O N EPICAP DIODE MMBV105GLT1* . . . designed in the Surface Mount package for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. C ASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and Uniform Tuning Ratio
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OCR Scan
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MMBV105GLT1
MMBV105GLT1*
OT-23
O-236AB)
30-IH-o
MMBV105GLT1
MM8V105GLT1
MMBV105GL
MMBv105
MMBV105G
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PDF
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Untitled
Abstract: No abstract text available
Text: BS850 DMOS Transistors P-Channel SOT-23 _ FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown _ MECHANICAL DATA Dimensions in inches and (millimeters)
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OCR Scan
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BS850
OT-23
OT-23
500mA
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW65ALT1 NPN Silicon CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 32 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage
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OCR Scan
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BCW65ALT1
OT-23
O-236AB)
150i2)
b3b72SS
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PDF
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transistor mark l6
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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OCR Scan
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KST1623L3/L4/L5/L6/L7
OT-23
KST1623L3
KST1623L4
KST1623L5
KST1623L6
KST1623L7
transistor mark l6
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PDF
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BT3904
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT3903 me q 7 cib 4],42 GGG7Et.Q t> | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR I SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Coffector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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MMBT3903
OT-23
BT3904
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PDF
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diode ep sod-323
Abstract: 1N4148 SOD-323 A
Text: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package
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OCR Scan
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MCL4148
MCL4448
1N4148
1N4448
Res448
01-Apr-99
diode ep sod-323
1N4148 SOD-323 A
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PDF
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SOT 23 1ft
Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*
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OCR Scan
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N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
OT-23
SOT 23 1ft
2N5484
2NS484
1Ft SOT23
transconductance 2N5485
2N5486
MMBF5486
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