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    SOT-23 ASE Search Results

    SOT-23 ASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 ASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2tk transistor

    Abstract: No abstract text available
    Text: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4403K MMBT4403K OT-23 2tk transistor

    2FK transistor

    Abstract: No abstract text available
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23

    SOT-23 2xk

    Abstract: 2xk transistor npn
    Text: MMBT4401K NPN Epitaxial Silicon Transistor MMBT4401K NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO


    Original     		PDF MMBT4401K MMBT4401K OT-23 SOT-23 2xk 2xk transistor npn

    2FK transistor

    Abstract: MMBT2907AK fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor
    Text: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units


    Original     		PDF MMBT2907AK MMBT2907AK OT-23 2FK transistor fairchild sot-23 Device Marking pc PNP Epitaxial Silicon Transistor sot-23 a/smd 2fk transistor

    transistor 1AK

    Abstract: 1AK marking transistor MMBT3904K 1ak transistor
    Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units


    Original     		PDF MMBT3904K MMBT3904K OT-23 transistor 1AK 1AK marking transistor 1ak transistor

    K2X pnp

    Abstract: MMBT3904 MMBT4401 MMBT4403
    Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 -H .h -a TO P VIEW Mechanical Data_ Case: SOT-23, Molded Plastic


    OCR Scan     		PDF MMBT4401 MMBT4403) OT-23, MIL-STD-202, OT-23 100MHz 150mA, DS30039 MMBT4401 K2X pnp MMBT3904 MMBT4403

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    Untitled

    Abstract: No abstract text available
    Text: OPA337 OPA2337 B U R R -B R O W N OPA33S" OPA2338" M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifierMSeries FEATURES DESCRIPTION • M/croSIZE PACKAGES: SOT-23-5<1 SOT-23-8 • SINGLE-SUPPLY OPERATION • RAIL-TO-RAIL OUTPUT SWING • FET-INPUT: lB = 10pA max


    OCR Scan     		PDF OPA337 OPA2337 OPA33S" OPA2338" OT-23-8 OPA337: OPA338: 120dB 525jiA/amp OPA337

    ltkh

    Abstract: marking LTIZ LGH3C100K24 LTIZ LT1615-1 LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475
    Text: u im LT1615/LT1615-1 TECHNOLOGY M ic ro p o w e r Step-Up D C /D C C onverters in SOT-23 FEATURES DE9CRIFT10n • Low Q iescent Cirrent: 20|aAin Active Mode <1 oAin Shutdown Mode ■ Operates with V|N as Low as 1V ■ Low Vcesat Switch: 250mV at 300mA ■ Tiny 5-Lead SOT-23 Package


    OCR Scan     		PDF lt1615/lt1615-1 OT-23 250mV 300mA OT-23 DE9CRIFT10n LT1615 a350mA LT1615-1 ltkh marking LTIZ LGH3C100K24 LTIZ LTIZ SOT A47 SOT23 R 4R7 inductor SOf-23 LMK316BJ475

    Untitled

    Abstract: No abstract text available
    Text: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 TOP VIEW Mechanical Data_ • • • • 1e 1 C ase: SO T-23, M olded Plastic


    OCR Scan     		PDF BAS70/ OT-23 300ns, DS11007 BAS70/-04/-05/-06

    Untitled

    Abstract: No abstract text available
    Text: IC IS BAT54 /A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 u Mechanical Data_ • • • • • C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,


    OCR Scan     		PDF BAT54 OT-23 100mA DS11005

    Untitled

    Abstract: No abstract text available
    Text: BAS40/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for T ransient and ESD Protection SOT-23 II t TOP VIEW • • • u 4 r;| C ase: SO T-23, M olded Plastic Term inals: S olderable per M IL-STD -202,


    OCR Scan     		PDF BAS40/ OT-23 BAS40-04 BAS40-05 BAS40-06 BAS40 300ns, DS11006

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage


    OCR Scan     		PDF 00G723G MMBA811C7 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltaae Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST5086/5087 OT-23 KST5086 KST5087 100KHZ

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF MMBT3906 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST3906 OT-23

    MMBv105

    Abstract: MMBV105G MMBV105GL MMBV105GLT1
    Text: SILIC O N EPICAP DIODE MMBV105GLT1* . . . designed in the Surface Mount package for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. C ASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and Uniform Tuning Ratio


    OCR Scan     		PDF MMBV105GLT1 MMBV105GLT1* OT-23 O-236AB) 30-IH-o MMBV105GLT1 MM8V105GLT1 MMBV105GL MMBv105 MMBV105G

    Untitled

    Abstract: No abstract text available
    Text: BS850 DMOS Transistors P-Channel SOT-23 _ FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown _ MECHANICAL DATA Dimensions in inches and (millimeters)


    OCR Scan     		PDF BS850 OT-23 OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW65ALT1 NPN Silicon CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 32 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage


    OCR Scan     		PDF BCW65ALT1 OT-23 O-236AB) 150i2) b3b72SS

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6

    BT3904

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT3903 me q 7 cib 4],42 GGG7Et.Q t> | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR I SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C) Characteristic Collector-Base Voltage Coffector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT3903 OT-23 BT3904

    diode ep sod-323

    Abstract: 1N4148 SOD-323 A
    Text: MCL4148.MCL4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively • M icro Melf package


    OCR Scan     		PDF MCL4148 MCL4448 1N4148 1N4448 Res448 01-Apr-99 diode ep sod-323 1N4148 SOD-323 A

    SOT 23 1ft

    Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
    Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*


    OCR Scan     		PDF N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 OT-23 SOT 23 1ft 2N5484 2NS484 1Ft SOT23 transconductance 2N5485 2N5486 MMBF5486