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    SOT-23 2A TRANSISTOR Search Results

    SOT-23 2A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 2A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER


    Original     		PDF OT-23 MMBT3906 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA

    Marking 2A

    Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
    Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features — As complementary type, the NPN transistor MMBT3904 is Recommended — Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3906 OT-23 OT-23 MMBT3904 -10mA -50mA -100mA -50mA, -10mA, 100MHz Marking 2A 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


    Original     		PDF OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23

    RF transistor marking IN SOT-89

    Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
    Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150


    Original     		PDF TSB1424 OT-89 OT-23 -100mA TSD2150 TSB1424CY TSB1424CX RF transistor marking IN SOT-89 RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    MARKING 2A

    Abstract: MMBT3906 MMBT3904
    Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features — As complementary type, the NPN transistor MMBT3904 is recommended — Epitaxial planar die construction — Marking: 2A Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3906 OT-23 MMBT3904 -10uA, -50mA, -10mA 100MHz -10mA MARKING 2A MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF ISO/TS16949 OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a

    JESD97

    Abstract: STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6
    Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of


    Original     		PDF STT2PF60L OT-23-6L OT23-6L JESD97 STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6

    STP6

    Abstract: STT2PF60L JESD97 MAX4434
    Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of


    Original     		PDF STT2PF60L OT-23-6L OT23-6L STP6 STT2PF60L JESD97 MAX4434

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: CMBT3906
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT3906 C-120

    model of 2n3906

    Abstract: No abstract text available
    Text: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced


    Original     		PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 model of 2n3906

    FSB560

    Abstract: FSB560A
    Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    Original     		PDF FSB560/FSB560A FSB560 FSB560A OT-23) FSB560A

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A


    Original     		PDF OT-23 CMBT3906 C-120

    MMBT8050

    Abstract: MMBT8050 BR mmbt8050 sot-23
    Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8050 OT-23 MMBT8050 MMBT8050 BR mmbt8050 sot-23

    MMBT8550

    Abstract: No abstract text available
    Text: MMBT8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8550 OT-23 MMBT8550

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    TRANSISTOR W25

    Abstract: FMMT549
    Text: FMMT549 FMMT549 C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted


    Original     		PDF FMMT549 OT-23) TRANSISTOR W25 FMMT549

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    Untitled

    Abstract: No abstract text available
    Text: ; S v m Se m i ; SOT-23 5YM5EMI SEMICONDUCTOR MMBT2907LT1 Plastic Encapsulate Transistors transistor SOT — 23 c pnp 1. BASE 2. EM IH E R 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W Tamb=25 °C) 2A Collector current Icm : -0.6 1.3 A Collector base voltage


    OCR Scan     		PDF OT-23 MMBT2907LT1 100MHz MMBT2907 -50mA OT-23 950TPY 037TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: : S v m Se m i : 5YM5EMI 5EMIC0 MDUCT0 R SOT -23 Plastic Encapsulate Transistors SOT — 23 BCW61 C TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.25 W Collector current Icm : -0.1 A 2A (Tamb=25 *C) 1.3 4H Collector base voltage


    OCR Scan     		PDF BCW61 OT-23 950TPY 037TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTO R tm July 1998 FMMT560 / FMMT560A B SuperS0T -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol


    OCR Scan     		PDF FMMT560 FMMT560A OT-23) FMMT560/FMMT560A FMMT560 100MHz