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    SOT-23 1P Z Search Results

    SOT-23 1P Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 1P Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    transistor 2222a to-92

    Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		PDF PN2222A MMBT2222A PZT2222A PN2222A MMBT2222A OT-23 OT-223 PN2222ARA PN2222ABU transistor 2222a to-92 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A NPN SMALL SIGNAL PSPICE

    2222A fairchild

    Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
    Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted


    Original     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 500mA. PN2222A O-92-3 PN2222ABU PN2222ANLBU 2222A fairchild 22222a 2222a sot223 SOT-23 EBC 2222A to-92 npn

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount


    Original     		PDF LMBT2222AWT1G 323/SCâ

    conclusion of zener diode voltage report

    Abstract: 1314 MARKING DIODE lrc zener diode
    Text: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到


    Original     		PDF LRC099-04BT1G SC-70-6 LRC099-04BT1G 350mm3 J-STD-020B, conclusion of zener diode voltage report 1314 MARKING DIODE lrc zener diode

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    marking 6AA SOD

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is


    Original     		PDF 323/SC MMBT2222AWT1 323/SC marking 6AA SOD

    transistor 2222a to-92

    Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage


    Original     		PDF MMBT2222LT1 MMBT2222ALT1* 236AB) transistor 2222a to-92 MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    TF411

    Abstract: t2222 PN2222A le TF-411
    Text: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 TF411 t2222 PN2222A le TF-411

    PN2222A le

    Abstract: oKH sot-23 PZT2222A on MMBT2222AI MMPQ
    Text: PN2222AI MMBT2222AI MMPQ2222 I NMT2222 I PZT2222A D iscrete POWER & Sig n a l Technologies Na t ion a I S e m i c o n d u c t o r ' PN2222A PZT2222A MMBT2222A SOT-23 B SOT-223 Mark: 1P NMT2222 MMPQ2222 SOT-6 SOIC-16 B1 M a r i e .1 B NPN General Purpose Amplifier


    OCR Scan     		PDF PN2222AI MMBT2222AI MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 PN2222A le oKH sot-23 PZT2222A on MMPQ

    Untitled

    Abstract: No abstract text available
    Text: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­


    OCR Scan     		PDF PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 SOIC-16 PN2222A MMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: S i M IC3QM P U C T Q R BAV99 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V lo Average Rectified Current


    OCR Scan     		PDF BAV99 OT-23 ma200

    diode e 1205

    Abstract: mmbd1201
    Text: tß S e m i c o n d u c t o r " MMBD1201 /1203 /1204 /1205 ÜL 24 " E 0 " M A R K IN G SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units Wiv Working Inverse Voltage


    OCR Scan     		PDF MMBD1201 OT-23 L5G113D diode e 1205

    fairchild 1P

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.


    OCR Scan     		PDF MMBD1201 OT-23 MMBD1204A MMBD1203 MMBD1205A fairchild 1P

    transistor 1f sot-23

    Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
    Text: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­


    OCR Scan     		PDF BCX70J BC81740 BC850B BC817B BCW72 BCX704 BC817-25 BCX70G BC847A BC817-16 transistor 1f sot-23 sot23 AJ motorola sot 23 marking transistor marking code SOT-23 marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BF 771 • For low noise, high gain amplifiers up to 2GHz • For linear broadband amplifiers • For modulators and amplifiers in VCR-tuners Type M arking O rdering code for versions on 8 mm-tape Package BF 771 R3 Q62702-F990 SOT 23


    OCR Scan     		PDF Q62702-F990

    marking k4

    Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 marking k4 100az FMMT2222A BCW33

    Z32100

    Abstract: Virtual Memory Processing Unit z32101 kl2 j2 131-6 wj 71
    Text: Zilog Product Specification January 1987 /o 3 0 3 3 Z32101 M EM O RY M A N A G E M E N T U N IT D E SC R IPT IO N The Z32101 M emory M anagem ent U nit MMU is a 32-bit bus-structured device that provides logicalto-physical address translation, memory organization, control, and access protection for


    OCR Scan     		PDF Z32101 32-bit Z32100 Virtual Memory Processing Unit kl2 j2 131-6 wj 71

    transistor marking 1p Z

    Abstract: No abstract text available
    Text: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage


    OCR Scan     		PDF S852T 08-Apr-97 1300MHz transistor marking 1p Z

    v05 SOT

    Abstract: No abstract text available
    Text: MP7651 r ir i JnkI w »- M icro Pöwer Systems 8-Channel High-Speed Nor-Inverting 10 MHz Input Bandwidth 8-Bit DACs with Output Buffer and Serial Digital Data Port and Internal Chip Address; Decoder FEATURES • Low Harmonic Distortion: 0.25% typical with VREF = 1 V p-p @ 1 MHz


    OCR Scan     		PDF MP7651 150ns 150mW v05 SOT