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    SOT-23 1AM Search Results

    SOT-23 1AM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 1AM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


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    PDF OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


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    PDF OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Code


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    PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    sot23 marking 1AM

    Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
    Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF MMBT3904 OT-23 OT-23 MMBT3906 100mA 100MHz 10mAdc sot23 marking 1AM MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am

    k4070

    Abstract: MMBT3904
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23


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    PDF MMBT3904 OT-23 350mWatts OT-23 30Vdc, IC/10 k4070 MMBT3904

    Transistor 03 smd

    Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


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    PDF MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR


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    PDF OT-23 OT-23 MMBT3904 MMBT3906 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR


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    PDF OT-23 OT-23 MMBT3904 MMBT3906 100mA 100MHz

    Bipolar Junction Transistor

    Abstract: AUK Semiconductor ic 805 transistor k 265 transistor 305
    Text: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10


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    PDF OT-23 MMBT123S OT-23 STD123S BC818 BCW65 BCW65C BC818, MMBT123S Bipolar Junction Transistor AUK Semiconductor ic 805 transistor k 265 transistor 305

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage


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    PDF OT-23 MMBT3904LT1 OT-23 10mAdc, 10mAdc MMBT3904LT1 100MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    PDF OT-23 MMBT3904LT1 OT-23

    1AM marking transistor

    Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
    Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    PDF MMBT3904LT1 OT-23 OT-23 10mAdc, 10mAdc 100MHz MMBT3904LT1 1AM marking transistor transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking 1AM transistor sot-23 Marking 1am

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F

    FHS3904

    Abstract: No abstract text available
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-23 Switching Transistors SOT-23 开关三极管 NPN Silicon FHS3904 MAXIMUM RATINGS 最大额定值


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    PDF OT-23 OT-23 FHS3904) 10mAdc 10mAdc, Width300s; FHS3904

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR W(Tamb=25℃) 2.4 1.3 Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃


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    PDF OT-23 MMBT3904LT1 MMBT3904LT1 100MHz 037TPY 950TPY 550REF 022REF

    marking 1am

    Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
    Text: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings


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    PDF MMBT3904 OT-23 MMBT3906 100mA 100MHz MMBT3904) marking 1am transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 1AM 6 1aM sot-23 transistor

    smd 1AM

    Abstract: 1AM SOT-23 1am smd MARKING 1AM SOT-23 MMBT3904 NPN bipolar junction transistors max hfe 2000 K4070
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3904 product family SOT-23 Plastic-Encapsulate Biploar Transistors


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    PDF MMBT3904 OT-23 200mA 350mW 300MHz 10mAdc, 10mAdc smd 1AM 1AM SOT-23 1am smd MARKING 1AM SOT-23 MMBT3904 NPN bipolar junction transistors max hfe 2000 K4070

    marking code 1AM

    Abstract: CODE 1AM MMBT3904 1am 1AM marking N-MMBT3904
    Text: MMBT3904 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT3906 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃


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    PDF MMBT3904 MMBT3906) OT-23 2002/95/EC 100MHz Jun-2009, KSNR11 MMBT3904 marking code 1AM CODE 1AM MMBT3904 1am 1AM marking N-MMBT3904

    1am marking sot-23

    Abstract: 1AM marking transistor
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)


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    PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1am marking sot-23 1AM marking transistor

    1am3

    Abstract: transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19


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    PDF MMBT3904 MMBT3906) OT-23 OT-23, MIL-STD-202, 100MHz DS30036 1am3 transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics


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    PDF MMBT3904 OT-23 OT-23

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)


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    PDF MMBT3904-HF OT-23 MMBT3904-HF QW-HTR02 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD MARKING CODE 1am SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor

    1am3

    Abstract: transistor 1am3 k1n r1 K1N TRANSISTOR sot-23 marking 1AM3 mmbt3904 complementary MMBT3906 L R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h ~ A TO P VIEW Mechanical Data_ • •


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    PDF MMBT3904 MMBT3906) OT-23, MIL-STD-202, MMBT3904 100MHz 100nA, 300ns, DS30036 1am3 transistor 1am3 k1n r1 K1N TRANSISTOR sot-23 marking 1AM3 mmbt3904 complementary MMBT3906 L R1A SURFACE MOUNT TRANSISTOR MMBT3906

    BC847BLT1

    Abstract: BC847CLT1 bc846blt1 2W3A 1AM marking
    Text: SOT-23 Devices Maximum die size 31 mil x 34 mil CASE 318-07 Bipolar Transistors General-Purpose Transistors The following tables are a listing of small-signal general-purpose transistors in the S O T-23 surface mount packages. These devices are intended for small-signal amplification for DC, audio, and lower RF frequencies. They also have applications as


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    PDF OT-23 MMBT8099LT1 BC846ALT1 BC846BLT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 BCB47ALT1 BC847BLT1 BC847CLT1 2W3A 1AM marking