Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-143 RF AMPLIFIER Search Results

    SOT-143 RF AMPLIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-143 RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MicroAmp MB-3 Circuit Board For SOT-143 Amplifiers FEATURES • Fits SOT-143 amplifier packages • Input/Output blocking capacitors • RF bypass and bias capacitors • Dual bias resistors • RF bias inductor • RO-4350 board material • Fits MicroAmp MH-series housings


    Original     		PDF OT-143 RO-4350 OT-143

    sot-143 rf amplifier

    Abstract: 2SC5097
    Text: 2SC5097 NPN 10 GHz RF Wideband Transistor P b Lead Pb -Free FEATURES: * SOT-143 package * Low noise figure * High power gain SOT-143 APPLIEATION: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC) Symbol VCBO VCEO Rating Collector-Base Voltage


    Original     		PDF 2SC5097 OT-143 OT-143 2SC5097 13-Feb-07 sot-143 rf amplifier

    Untitled

    Abstract: No abstract text available
    Text: BFP280T / BFP280TW / BFP280TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. SOT-143 3 4 2 Mechanical Data Typ: BFP280T Case: SOT-143 Plastic case


    Original     		PDF BFP280T BFP280TW BFP280TRW OT-143 OT-143 OT-343 BFP280TRW OT-343R

    MG MARKING

    Abstract: No abstract text available
    Text: BFP280T / BFP280TW / BFP280TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. SOT-143 3 4 2 Mechanical Data Typ: BFP280T Case: SOT-143 Plastic case


    Original     		PDF BFP280T BFP280TW BFP280TRW OT-143 OT-143 OT-343 BFP280TRW OT-343R MG MARKING

    382 1500

    Abstract: BFP93A BFP93AW transistor j02 527
    Text: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A


    Original     		PDF BFP93A BFP93AW OT-143 OT-343 BFP93A OT-143 OT-343 D-74025 03-Sep-04 382 1500 BFP93AW transistor j02 527

    ac 1084 0515

    Abstract: No abstract text available
    Text: BFP93A / BFP93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range. 2 1 SOT-343 Mechanical Data Typ: BFP93A


    Original     		PDF BFP93A BFP93AW OT-143 OT-343 OT-143 BFP93AW OT-343 D-74025 30-Aug-04 ac 1084 0515

    Untitled

    Abstract: No abstract text available
    Text: BFP182T / BFP182TW / BFP182TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP182T BFP182TW BFP182TRW OT-143 OT-343 OT-143 OT-343 OT-343R

    transistor w 431

    Abstract: No abstract text available
    Text: BFP92A / BFP92AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range specially for wide band antenna amplifier.


    Original     		PDF BFP92A BFP92AW OT-143 OT-343 OT-143 BFP92AW OT-343 D-74025 23-Aug-04 transistor w 431

    BFP196TW

    Abstract: BFP196T BFP196TR
    Text: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour 3 4 2 1 Applications SOT-143R For low noise, low distortion broadband amplifiers in


    Original     		PDF BFP196T BFP196TR BFP196TW OT-143 OT-143R OT-343 BFP196T OT-143 OT-343 BFP196TW

    83P sot-143

    Abstract: MG MARKING
    Text: BFP183T / BFP183TW / BFP183TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency fT = 8 GHz 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP183T BFP183TW BFP183TRW OT-143 OT-343 OT-143 OT-343 OT-343R 83P sot-143 MG MARKING

    274 231

    Abstract: 955 539 ic
    Text: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143


    Original     		PDF D-74025 274 231 955 539 ic

    BFP93A

    Abstract: No abstract text available
    Text: BFP93A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 1 3 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter


    Original     		PDF BFP93A D-74025 17-Apr-96 BFP93A

    mg sot-143

    Abstract: BFP280T BFP280TRW BFP280TW
    Text: BFP280T / BFP280TW / BFP280TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SOT-143 e3 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP280T BFP280TW BFP280TRW 2002/95/EC 2002/96/EC OT-143 OT-343 BFP280T OT-143 BFP280TW mg sot-143 BFP280TRW

    Untitled

    Abstract: No abstract text available
    Text: BFP280T / BFP280TW / BFP280TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SOT-143 e3 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at


    Original     		PDF BFP280T BFP280TW BFP280TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143

    955 539 ic

    Abstract: BFP81
    Text: BFP81 Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter


    Original     		PDF BFP81 D-74025 17-Apr-96 955 539 ic BFP81

    marking W18

    Abstract: BFP181TRW BFP181TW BFP181T vishay MARKING UM
    Text: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343


    Original     		PDF BFP181T BFP181TW BFP181TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R BFP181T OT-143 marking W18 BFP181TRW vishay MARKING UM

    w19 transistor

    Abstract: npn transistor w19 marking W19
    Text: BFP193T / BFP193TW / BFP193TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications SOT-343 For low noise and high gain applications such as


    Original     		PDF BFP193T BFP193TW BFP193TRW OT-143 OT-343 OT-143 OT-343 OT-343R w19 transistor npn transistor w19 marking W19

    marking W18

    Abstract: SOT W18 transistor w18 BFP181TR MG MARKING BFP181TRW
    Text: BFP181T / BFP181TW / BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • SOT-143 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 2 1 SOT-343


    Original     		PDF BFP181T BFP181TW BFP181TRW OT-143 2002/95/EC 2002/96/EC OT-343 OT-343R OT-143 marking W18 SOT W18 transistor w18 BFP181TR MG MARKING BFP181TRW

    Untitled

    Abstract: No abstract text available
    Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This


    Original     		PDF BFP67 BFP67R BFP67W OT-143 OT-143R OT-143 OT-143R OT-343

    BFP92A

    Abstract: No abstract text available
    Text: BFP92A Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter


    Original     		PDF BFP92A D-74025 17-Apr-96 BFP92A

    80846

    Abstract: 022241 gummel
    Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143


    Original     		PDF OT-143 Q62702-F1611 900MHz Dec-11-1996 80846 022241 gummel

    marking 557 SOT143

    Abstract: No abstract text available
    Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This


    Original     		PDF BFP67 BFP67R BFP67W OT-143 OT-143R OT-143 OT-143R BFPW67 marking 557 SOT143

    rf attenuator soic

    Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
    Text: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .


    OCR Scan     		PDF

    irf 4427 s

    Abstract: IS22I A 2232 0003 irf 1642 IRF 4925 irf 709 14029
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line G eneral Purpose RF Cascode A m plifier The MRFIC0916 is a cost-effective, high isolation cascode silicon mono­ lithic amplifier in the industry standard SOT-143 surface mount package de­ signed for general purpose RF applications. On chip bias circuitry sets the


    OCR Scan     		PDF MRFIC0916 OT-143 IS22I irf 4427 s A 2232 0003 irf 1642 IRF 4925 irf 709 14029