SOT 89 B772 Search Results

SOT 89 B772 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MKZ6V2		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, SOT-23
MSZ6V8		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-346
MUZ20V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, SOT-323
MKZ6V8		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-23
MSZ12V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, SOT-346

SOT 89 B772 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89-3L FEATURES Low speed switching 1 2 3 1. BASE 2. COLLETOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value	Original	OT-89-3L OT-89-3L -10mA 10MHz	PDF
b772 p Abstract: C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage	Original	OT-89 OT-89 -100mA 10MHz b772 p C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89	PDF
B772 Abstract: br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units	Original	OT-89 OT-89 -10mA -100A 10MHz B772 br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units	Original	OT-89 OT-89 10MHz	PDF
B772 Abstract: TRANSISTOR br b772 TRANSISTOR B772 sot-89 Text: SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range	Original	OT-89 OT-89 -100mA 10MHz B772 TRANSISTOR br b772 TRANSISTOR B772 sot-89	PDF
B772 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） FEATURES Power dissipation : 625 PCM SOT-89 1 2 3 1. BASE 1 m W（Tamb=25℃） 2. COLLETOR 2 3 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	OT-89 OT-89 Test100 -100mA 10MHz B772	PDF
br b772 Abstract: TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f Text: B772 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLETOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features B 0.8 MIN Low speed switching 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30	Original	OT-89 OT-89 -100A -10mA -100A 10MHz br b772 TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f	PDF
B772 031 Abstract: B772 marking PNP 200V 2A SOT89 PNP TRANSISTOR "SOT89" marking pr H B772 TRANSISTOR b772 06 sot 89 b772 B772+031 Text: WILLAS FM120-M B772 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.	Original	OT-89 OD-123+ FM1200-M FM120-M OD-123H FM180-MH FM1100-MH FM1150-MH FM1200 118TYP B772 031 B772 marking PNP 200V 2A SOT89 PNP TRANSISTOR "SOT89" marking pr H B772 TRANSISTOR b772 06 sot 89 b772 B772+031	PDF
sot 89 D882 Abstract: b772 p B772 equivalent b772 pnp marking f5 sot-89 D882 D882 B772 WTM882 b772 b772 npn Text: WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) (1)	Original	WTM772 WTM882 OT-89 PNP/WTM772 NPN/WTM882 WTM772 WTM882 WTM88 sot 89 D882 b772 p B772 equivalent b772 pnp marking f5 sot-89 D882 D882 B772 b772 b772 npn	PDF
Untitled Abstract: No abstract text available Text: WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER WTM772 2 3 WTM882 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO	Original	WTM772 WTM882 OT-89 PNP/WTM772 NPN/WTM882 WTM772 WTM882 14-Aug-2012	PDF
Untitled Abstract: No abstract text available Text: WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER WTM772 2 3 WTM882 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO	Original	WTM772 WTM882 OT-89 PNP/WTM772 NPN/WTM882 WTM772 WTM882 14-Aug-2012	PDF
WTM882 Abstract: B772 D882 WTM772 Text: WTM772 WTM882 PNP/NPN Epitaxial Planar Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) (1)	Original	WTM772 WTM882 OT-89 PNP/WTM772 NPN/WTM882 WTM88 WT772M WTM882 B772 D882 WTM772	PDF
IN3492 Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90	OCR Scan	3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r	PDF