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    SOT 26 DUAL N-CHANNEL MOSFET Search Results

    SOT 26 DUAL N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    SSM3J356R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J332R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F Visit Toshiba Electronic Devices & Storage Corporation
    SSM3J351R Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SOT 26 DUAL N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODEL: DMN601DMK DMN601DMK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70


    Original     		DMN601DMK OT-26 DS30657 DMN601DMK-7 3000/Tape com/datasheets/ap02007 PDF

    marking code k7k transistor date code 38

    Abstract: DMN601DMK DMN601DMK-7 marking code k7k transistor
    Text: DMN601DMK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 Low Input/Output Leakage


    Original     		DMN601DMK OT-26 DMN601DMK-7 3000/Tape com/datasheets/ap02007 DS30657 marking code k7k transistor date code 38 DMN601DMK DMN601DMK-7 marking code k7k transistor PDF

    DMN2004DMK

    Abstract: DMN2004DMK-7
    Text: SPICE MODEL: DMN2004DMK DMN2004DMK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · · · Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60


    Original     		DMN2004DMK OT-26 AEC-Q101 DS30937 DMN2004DMK DMN2004DMK-7 PDF

    DMN5L06DMK

    Abstract: No abstract text available
    Text: SPICE MODEL: DMN5L06DMK DMN5L06DMK Lead-free Green NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · · · Dual N-Channel MOSFET SOT-26 Low On-Resistance A Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60


    Original     		DMN5L06DMK OT-26 AEC-Q101 DS30927 DMN5L06DMK PDF

    CMXDM7002A

    Abstract: X02A 2N7002
    Text: CMXDM7002A DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA 500mA, 200mA 200mA, 400mA 05-December X02A PDF

    APM2701

    Abstract: APM2701C APM27 STD-020C
    Text: APM2701C Dual Enhancement Mode MOSFET N and P-Channel Pin Description Features • N-Channel 20V/3A, RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • Top View of SOT-26 P-Channel -20V/-1.5A, RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V


    Original     		APM2701C OT-26 -20V/-1 OT-23-6 APM2701 APM2701C APM27 STD-020C PDF

    P-Channel MOSFET code L 1A

    Abstract: APM2700C STD-020C single P-Channel mosfet sot-26
    Text: APM2700C Dual Enhancement Mode MOSFET N and P-Channel Pin Description Features • N-Channel 20V/1.8A, RDS(ON)=170mΩ(typ.) @ VGS=4.5V RDS(ON)=270mΩ(typ.) @ VGS=2.5V • P-Channel Top View of SOT-26 -20V/-1.2A, RDS(ON)=360mΩ(typ.) @ VGS=-4.5V RDS(ON)=530mΩ(typ.) @ VGS=-2.5V


    Original     		APM2700C OT-26 -20V/-1 OT-23-6 P-Channel MOSFET code L 1A APM2700C STD-020C single P-Channel mosfet sot-26 PDF

    8205 A mosfet

    Abstract: 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205
    Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET FHK8205 Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 SOT-26 DESCRIPTION & FEATURES 概述及特點 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻


    Original     		OT-26 FHK8205 8205 A mosfet 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205 PDF

    9926 mosfet

    Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
    Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻


    Original     		FHK9926 OT-26 9926 mosfet F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926 PDF

    X02A

    Abstract: CMXDM7002A 2N7002
    Text: CMXDM7002A SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-26 CASE MAXIMUM RATINGS TA=25°C Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current


    Original     		CMXDM7002A OT-26 CMXDM7002A 2N7002 500mA, 200mA 200mA, 400mA 14-November X02A PDF

    WTL2622

    Abstract: No abstract text available
    Text: WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN P b Lead Pb -Free DRAIN CURRENT 520mAMPERES DRAIN SOURCE VOLTAGE 50 VOLTAGE 1 GATE 5 SOURCE Features: 6 4 DRAIN * Low Gate charge * Surface Mount Package 1 2 5 4 3 SOT-26 3 GATE 2 SOURCE Maximum Ratings (TA


    Original     		WTL2622 520mAMPERES OT-26 300us, 19-Sep-05 WTL2622 PDF

    TSM9966D

    Abstract: TSM9966DCX6 sot 26 Dual N-Channel MOSFET
    Text: TSM9966D 20V Dual N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Source 1 2. Drain 5. Drain 3. Gate 2 4. Source 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram ● Advance Trench Process Technology


    Original     		TSM9966D OT-26 TSM9966DCX6 TSM9966D sot 26 Dual N-Channel MOSFET PDF

    TSM3900D

    Abstract: sot 26 Dual N-Channel MOSFET
    Text: TSM3900D 20V Dual N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram ●


    Original     		TSM3900D OT-26 TSM3900DCX6 TSM3900D sot 26 Dual N-Channel MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(m) 20 Features ID (A) 55 @ VGS = 4.5V 2.0 70 @ VGS = 2.5V 1.5 110 @ VGS = 1.8V 1.0 Block Diagram 


    Original     		TSM3900D OT-26 TSM3900DCX6 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology


    Original     		TSM6988D OT-26 TSM6988DCX6 PDF

    4800 mosfet

    Abstract: esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
    Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology


    Original     		TSM6988D OT-26 TSM6988DCX6 4800 mosfet esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800 PDF

    TSM6988D

    Abstract: N-Channel mosfet sot-26
    Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 35 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.0 Block Diagram ● Advance Trench Process Technology


    Original     		TSM6988D OT-26 TSM6988DCX6 TSM6988D N-Channel mosfet sot-26 PDF

    SOT-26 A11

    Abstract: TSM2611ED
    Text: TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 6. Gate 1 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 Features ID (A) 20 @ VGS = 4.5V 6 28 @ VGS = 2.5V 5 Block Diagram ● Advance Trench Process Technology


    Original     		TSM2611ED OT-26 TSM2611EDCX6 SOT-26 A11 TSM2611ED PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF