Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT 23 ZC Search Results

    SOT 23 ZC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 ZC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LRB411DLT1G

    Abstract: LRB411DLT3G MARKING D3E
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE


    Original
    PDF LRB411DLT1G OT-23) OT-23 LRB411DLT1G LRB411DLT3G MARKING D3E

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE


    Original
    PDF LRB411DLT1G OT-23) OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G LRB411DLT1G zApplications Low current rectification 3 1 2 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. SOT– 23 zConstruction Silicon epitaxial planar z Pb-Free package is available


    Original
    PDF LRB411DLT1G OT-23)

    Transistor 03 smd

    Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original
    PDF MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03

    LRB421LT1G

    Abstract: LRB421LT3G
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G zApplications Low power rectification 3 1 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 2 SOT– 23 zConstruction Silicon epitaxial planar 3 CATHODE 1 ANODE z We declare that the material of product


    Original
    PDF LRB421LT1G OT-23) OT-23 LRB421LT1G LRB421LT3G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 0.2 A Collector-base voltage V (BR) CBO:


    Original
    PDF OT-23 FMMT4124 OT-23 FMMT4124: 100MHz

    2n3904 npn fairchild

    Abstract: 2N3904 2N4124 MMBT4124 2n3904 sot 23 SOT23B
    Text: 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


    Original
    PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 2n3904 npn fairchild 2N3904 MMBT4124 2n3904 sot 23 SOT23B

    2N3904

    Abstract: 2N4124 MMBT4124 2N412 NPN sot23 mark NF
    Text: N 2N4124 MMBT4124 C E C TO-92 BE SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


    Original
    PDF 2N4124 MMBT4124 OT-23 2N3904 2N4124 2N3904 MMBT4124 2N412 NPN sot23 mark NF

    diode cross reference

    Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
    Text: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected


    Original
    PDF OT-23 HSMP-3800 HSMP-3810 OT-143 HSMP-3802 HSMP-3804 HSMP-4810 HSMP-3812 HSMP-3813 HSMP-3814 diode cross reference diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference

    2n3904 sot 23

    Abstract: No abstract text available
    Text: 2N4124 / MMBT4124 2N4124 MMBT4124 C E C B TO-92 B SOT-23 E Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


    Original
    PDF 2N4124 MMBT4124 2N4124 OT-23 2N3904 2n3904 sot 23

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ZCBD48WA SOT-23 SURFACE MOUNT LED LAMP www.SunLED.com Package Schematics Features ● Ideal for indication light on hand held products ● Long life and robust package ● Standard Package: 2,000pcs/ Reel ● MSL Moisture Sensitivity Level : 3


    Original
    PDF ZCBD48WA OT-23 000pcs/ SDSA7383

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ZCBD48WA SOT-23 SURFACE MOUNT LED LAMP www.SunLED.com Package Schematics Features ● Ideal for indication light on hand held products ● Long life and robust package ● Variety of lens types and color choices available ● Package: 2000pcs / reel


    Original
    PDF ZCBD48WA OT-23 2000pcs SDSA7383 SDSA7383

    diode schottky code 10

    Abstract: marking 724 diode Schottky diode low voltage sot-23 marking code 1SS321
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original
    PDF 1SS321 OT-23 diode schottky code 10 marking 724 diode Schottky diode low voltage sot-23 marking code 1SS321

    zc marking code

    Abstract: 1SS321 zc marking diode
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original
    PDF 1SS321 OT-23 zc marking code 1SS321 zc marking diode

    BZM55B

    Abstract: BZM55C
    Text: BZM55C2V0-BZM55C75 Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol


    Original
    PDF BZM55C2V0-BZM55C75 323/SOT RthJA300K/W BZM55B BZM55C

    Untitled

    Abstract: No abstract text available
    Text: FMMT4124 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : 0.2 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original
    PDF FMMT4124 OT-23 OT-23 MIL-STD-202E

    BZM55B

    Abstract: BZM55C
    Text: BZM55C Series Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value


    Original
    PDF BZM55C 323/SOT RthJA300K/W 200mA BZM55B

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G LRB421LT1G S-LRB421LT1G zApplications Low power rectification 3 zFeatures 1 Small mold type. SOT-23) 2) Low IR 3) High reliability. 4) S- Prefix for Automotive and Other Applications Requiring


    Original
    PDF LRB421LT1G S-LRB421LT1G OT-23) AEC-Q101 OT-23

    BC859B 215

    Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)


    OCR Scan
    PDF OT-23 BC818-25 BC818-16 BCX20 MMBT4124 BCW32 BC856B BC856A MMBT2907A BC857C BC859B 215 motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23

    Untitled

    Abstract: No abstract text available
    Text: S iM C O M D U C T O R 2N4124 MMBT4124 SOT-23 B Mark: ZC NPN General Purpose Amplifier This device is designed as a general purpose am plifier and switch. The useful dynam ic range extends to 100 m A as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904


    OCR Scan
    PDF 2N4124 MMBT4124 2N4124 OT-23 2N3904

    Untitled

    Abstract: No abstract text available
    Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan
    PDF KST4124 OT-23 KST3904

    Untitled

    Abstract: No abstract text available
    Text: v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB.


    OCR Scan
    PDF BZM55B. BZT55B. 300K/W 01-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)


    OCR Scan
    PDF 0Q11524 OT-23 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST4124 KST4126 BCW29 O-92S

    Diodes Marking K6

    Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan
    PDF OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING