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    SOT 23 MOSFET Search Results

    SOT 23 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


    Original     		PDF 2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT

    8002A

    Abstract: 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532
    Text: Small Signal MOSFETs Selection Guide Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOT-963 SOD-523 SOD-323 SOT-323 SOT-363 SOD-123 SOT-143 SOT-26 SOT-28 SMB SMC SOIC-16 TLM Tiny Leadless Module SOT-523 SOT-563 SOD-123F SOT-23 SOT-23F SOT-89


    Original     		PDF OD-923 OT-923 OT-953 OT-963 OD-523 OD-323 OT-323 OT-363 OD-123 OT-143 8002A 7002A Small Signal MOSFETs CMXDM7002A mosfet SOD 23 "Small Signal MOSFETs" 7120 CEDM7001 CMLDM7002AJ TLM532

    EIA-486

    Abstract: GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork
    Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor


    Original     		PDF OD-723 OD-523 OD-323 O-252 OT-23-6 OT-523 OT-323 OT-23 OT-323 EIA-486 GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork

    SD965

    Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
    Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor


    Original     		PDF OD-723 OD-523 OD-323 O-252 OT-23-6 OT-523 OT-323 OT-23 OT-323 SD965 J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter


    Original     		PDF OT-23-6L NCE8205 OT-23-6L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS NCE8205 N-Channel MOSFETS SOT-23-6L FEATURE Low on-resistance APPLICATIONS Li-ion battery management applications Maximum ratings Ta=25℃ unless otherwise noted Parameter


    Original     		PDF OT-23-6L NCE8205 OT-23-6L 250uA

    b84 diode

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


    Original     		PDF OT-23 BSS84 OT-23 b84 diode

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.


    Original     		PDF OT-23 BSS84 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON . z Exceptional on-resistance and maximum DC current capability


    Original     		PDF OT-23 CJ3401 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON . z Exceptional on-resistance and maximum DC current capability


    Original     		PDF OT-23 CJ3401 OT-23

    2N7002 MARKING

    Abstract: TD 225 n-channel mosfet SOT-23 7002 n channel 2N7002 marking 7002 marking 7002 sot 23 7002 SOT23
    Text: 2N7002 N-CHANNEL MOSFET PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES 1. GATE 2. SOURCE High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability 3. DRAIN


    Original     		PDF 2N7002 OT-23 OT-23 2N7002 MARKING TD 225 n-channel mosfet SOT-23 7002 n channel 2N7002 marking 7002 marking 7002 sot 23 7002 SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS ON z Exceptional on-resistance and maximum DC current capability


    Original     		PDF OT-23 CJ3400 OT-23

    2N7002 MARKING

    Abstract: mosfet 2n7002 SOT-23 2N7002 MARKING 7002
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 specifie10 500mA 200mA 115mA, 500mA 2N7002 MARKING mosfet 2n7002 SOT-23 2N7002 MARKING 7002

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 500mA

    2N7002K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002K OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original     		PDF OT-23 2SK3018 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002K OT-23 300mA -100A/Â

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 200mA 500mA 115mA, 500mA

    marking 72K

    Abstract: n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K 2N7002K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002K OT-23 500mA 300mA 300mA -100A/ marking 72K n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002 MOSFET N-Channel SOT-23 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original     		PDF OT-23 2N7002 OT-23 200mA 500mA 115mA, 500mA