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    SOT 23 MARKING CODE NT Search Results

    SOT 23 MARKING CODE NT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 MARKING CODE NT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification NTR1P02L, NVTR01P02L Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package V BR DSS RDS(on) Max ID Max −20 V 220 mW @ −4.5 V −1.3 A P−Channel D These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal


    Original     		PDF NTR1P02L, NVTR01P02L

    Untitled

    Abstract: No abstract text available
    Text: Product specification NTR4501N Power MOSFET V BR DSS RDS(on) TYP ID MAX (Note 1) 70 mW @ 4.5 V 3.6 A 85 mW @ 2.5 V 3.1 A 20 V, 3.2 A, Single N−Channel, SOT−23 20 V Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching


    Original     		PDF NTR4501N

    Untitled

    Abstract: No abstract text available
    Text: Product specification NTR4502P, NVTR4502P Power MOSFET V BR DSS −30 V, −1.95 A, Single, P−Channel, SOT−23 155 mW @ −10 V −30 V Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		PDF NTR4502P, NVTR4502P

    ntr4503nt1

    Abstract: No abstract text available
    Text: Product specification NTR4503N Power MOSFET ID MAX 85 mW @ 10 V 30 V Features • • • • RDS on TYP V(BR)DSS 30 V, 2.5 A, Single N−Channel, SOT−23 2.5 A 105 mW @ 4.5 V Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive


    Original     		PDF NTR4503N ntr4503nt1

    Untitled

    Abstract: No abstract text available
    Text: Product specification NTR2101P Small Signal MOSFET V BR DSS RDS(on) Typ −8.0 V, −3.7 A, Single P−Channel, SOT−23 39 mW @ −4.5 V −8.0 V −3.7 A 52 mW @ −2.5 V Features • • • • ID Max 79 mW @ −1.8 V Leading Trench Technology for Low RDS(on)


    Original     		PDF NTR2101P

    DIODE A16

    Abstract: NTR4101PT1G
    Text: Product specification NTR4101P, NTRV4101P Trench Power MOSFET V BR DSS −20 V, Single P−Channel, SOT−23 Features • • • • • RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.2 A 90 mW @ −2.5 V Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive


    Original     		PDF NTR4101P, NTRV4101P DIODE A16 NTR4101PT1G

    900E-01

    Abstract: No abstract text available
    Text: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF NTR1P02LT1 OT-23 NTR1P02LT1/D 900E-01

    Untitled

    Abstract: No abstract text available
    Text: NTR1P02LT1, NTR1P02LT1H Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF NTR1P02LT1, NTR1P02LT1H OT-23 NTR1P02LT1/D

    Untitled

    Abstract: No abstract text available
    Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space


    Original     		PDF NTR0202PL NTR0202PL/D

    NTR1P02LT1G

    Abstract: NTR1P02LT1 NTR1P02LT3 NTR1P02LT3G
    Text: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF NTR1P02LT1 OT-23 NTR1P02LT1/D NTR1P02LT1G NTR1P02LT1 NTR1P02LT3 NTR1P02LT3G

    NTR0202PL

    Abstract: NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G
    Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space


    Original     		PDF NTR0202PL OT-23 NTR0202PL/D NTR0202PL NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G

    Untitled

    Abstract: No abstract text available
    Text: Product specification NTR4170N Power MOSFET V BR DSS 30 V, 3.2 A, Single N−Channel, SOT−23 30 V Features • • • • • Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb−Free Device RDS(on) MAX ID MAX 55 mW @ 10 V 3.2 A


    Original     		PDF NTR4170N

    NTR4501N

    Abstract: NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G
    Text: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available


    Original     		PDF NTR4501N OT-23 OT-23 NTR4501N/D NTR4501N NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G

    NTR4501NT

    Abstract: Power MOSFET N-Channel sot-23 NTR4501NT1G transistor marking code SOT-23 MARKING QG 6 PIN sot-23 Marking 14 NTR4501N NTR4501NT1 NTR4501NT3 NTR4501NT3G
    Text: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available


    Original     		PDF NTR4501N OT-23 OT-23 NTR4501N/D NTR4501NT Power MOSFET N-Channel sot-23 NTR4501NT1G transistor marking code SOT-23 MARKING QG 6 PIN sot-23 Marking 14 NTR4501N NTR4501NT1 NTR4501NT3 NTR4501NT3G

    NTR4502PT1G

    Abstract: NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G
    Text: NTR4502P Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 Features • • • • http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS ON for Low Conduction Losses SOT−23 Surface Mount for Small Footprint (3 X 3 mm)


    Original     		PDF NTR4502P OT-23 OT-23 NTR4502P/D NTR4502PT1G NTR4502P NTR4502PT1 NTR4502PT3 NTR4502PT3G

    NVTR1P02LT1

    Abstract: NVTR1P02LT1G
    Text: NTR1P02LT1, NVTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package http://onsemi.com These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF NTR1P02LT1, NVTR1P02LT1 OT-23 NTR1P02LT1/D NVTR1P02LT1G

    NTR4501N

    Abstract: NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G
    Text: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Packages are Available


    Original     		PDF NTR4501N OT-23 OT-23 NTR4501N/D NTR4501N NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G

    marking TR1 SOT-23

    Abstract: Power MOSFET N-Channel sot-23 NTR4501NT3G
    Text: NTR4501N Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available


    Original     		PDF NTR4501N OT-23 OT-23 marking TR1 SOT-23 Power MOSFET N-Channel sot-23 NTR4501NT3G

    Untitled

    Abstract: No abstract text available
    Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space


    Original     		PDF NTR0202PL OT-23

    Untitled

    Abstract: No abstract text available
    Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS on Provides Higher Efficiency and Extends Battery Life http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −20 V 550 mW @ −10 V −400 mA Applications • • • •


    Original     		PDF NTR0202PL OT-23 NTR0202PL/D

    NTR1P02LT1

    Abstract: No abstract text available
    Text: NTR1P02LT1 Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical


    Original     		PDF NTR1P02LT1 OT-23 NTR1P02LT1/D

    SAS SOT23

    Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
    Text: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on


    OCR Scan     		PDF OT-23 SAS SOT23 SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG

    DIODE WJ SOt23

    Abstract: 7.a sot-23 marking BSs sot23
    Text: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on


    OCR Scan     		PDF OT-23 OT-23, 62702-S DIODE WJ SOt23 7.a sot-23 marking BSs sot23

    marking BSs sot23 siemens

    Abstract: marking BSs sot23
    Text: SIEMENS BSS 284 SIPMOS Small-Signal T ransistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Type b -0.13 A BSS 284 VDS -50 V Type BSS 284 Ordering Code Q62702-S299 ^DS(on) 10Q Package Marking SOT-23 SDs Tape and Reel Information


    OCR Scan     		PDF OT-23 Q62702-S299 E6327 OT-23 marking BSs sot23 siemens marking BSs sot23