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    SOT 23 MARK AD Search Results

    SOT 23 MARK AD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 MARK AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc847b mark

    Abstract: BC847b fAIRCHILD 847C BC846 BC846A BC846B BC847 BC847A BC847B BC847C
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


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    PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A bc847b mark BC847b fAIRCHILD 847C BC846 BC847 BC847C

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


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    PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    Untitled

    Abstract: No abstract text available
    Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings


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    PDF MMBT3646 OT-23 OT-23

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
    Text: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


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    PDF PN2907A MMBT2907A PZT2907A OT-23 OT-223 NMT2907 MMPQ2907 SOIC-16 MMBT2907A MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


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    PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    MMBT3646

    Abstract: No abstract text available
    Text: MMBT3646 MMBT3646 Switching Transistor 3 2 SOT-23 Mark: 23 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCES Collector-Emitter Voltage 40 V VCBO


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    PDF MMBT3646 OT-23 MMBT3646

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


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    PDF 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 OT-23 OT-223

    2MPSA06

    Abstract: MPSA06 NPN EBC SOT-23 MMBTA06 PZTA06 SOT-23 EBC B010100
    Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G


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    PDF MPSA06 MMBTA06 PZTA06 300mA. MMBTA06 MPSA06 OT-23 OT-223 2MPSA06 NPN EBC SOT-23 PZTA06 SOT-23 EBC B010100

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 / PZTA92 PNP High-Voltage Amplifier Description This device is designed for high-voltage driver applications. Sourced from process 76. C C E E SOT-23 Mark: 2D C SOT-223 B Figure 1. MMBTA92 Device Package B Figure 2. PZTA92 Device Package Ordering Information


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    PDF MMBTA92 PZTA92 OT-23 OT-223 PZTA92 MMBTA92 OT-23 OT-223

    MMBT3906

    Abstract: No abstract text available
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    Untitled

    Abstract: No abstract text available
    Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U


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    PDF MPSA63 MMBTA63 PZTA63 MMBTA63 MPSA63 OT-23 OT-223

    Untitled

    Abstract: No abstract text available
    Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G


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    PDF MPSA06 MMBTA06 PZTA06 300mA. MMBTA06 MPSA06 OT-23 OT-223

    2n3906

    Abstract: MMBT3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    SOT-23 EBC

    Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
    Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U


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    PDF MPSA63 MMBTA63 PZTA63 MMBTA63 MPSA63 OT-23 OT-223 SOT-23 EBC PZTA63 Fairchild Semiconductor - Process

    Mmbt3906

    Abstract: 2N3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    2N3906

    Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
    Text: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906 die 2N3906 fairchild die 728p MMPQ3906 PZT3906

    CBVK741B019

    Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


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    PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 CBVK741B019 F63TNR MMBTA13 MPSA13 PN2222N PZTA13

    pnp transistor bel 188

    Abstract: AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units


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    PDF MMBTA92 PZTA92 OT-23 OT-223 pnp transistor bel 188 AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D

    sot 223 fairchild

    Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    PDF MMBTA92 PZTA92 OT-23 OT-223 sot 223 fairchild sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package


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    PDF MMBT2222A PZT2222A 500mA. OT-23 OT-223 PZT2222A MMBT2222A OT-23

    transistor bel 100

    Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    PDF MMBTA14 PZTA14 OT-23 OT-223 transistor bel 100 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    MPSA13

    Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


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    PDF MMBTA13 PZTA13 OT-23 OT-223 MPSA14 MPSA13 equivalent mpsa14 MMBTA13 PZTA13

    bel 188 transistor

    Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
    Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol


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    PDF MMBTA14 PZTA14 OT-23 OT-223 bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14

    bel 188 transistor

    Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
    Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


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    PDF MMBTA92 PZTA92 OT-23 OT-223 bel 188 transistor MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D