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    SOT 23 MARK 2V Search Results

    SOT 23 MARK 2V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 23 MARK 2V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR A64

    Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
    Text: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol


    Original     		PDF MPSA64 MMBTA64 PZTA64 OT-23 OT-223 MPSA64 MMBTA64 TRANSISTOR A64 a64 TRANSISTOR sot23 a64 PZTA64 darlington sot23 pnp a64 sot

    MMBTA64

    Abstract: MPSA64 PZTA64 AP-61 FAIRCHILD SOT-223 MARK
    Text: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol


    Original     		PDF MPSA64 MMBTA64 PZTA64 OT-23 OT-223 MPSA64 MMBTA64 PZTA64 AP-61 FAIRCHILD SOT-223 MARK

    sot 23 mark 2v

    Abstract: darlington sot23 pnp
    Text: MMBTA64 PZTA64 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2V B E C MPSA64 / MMBTA64 / PZTA64 MPSA64 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*


    Original     		PDF MPSA64 MMBTA64 PZTA64 MPSA64 MMBTA64 OT-23 OT-223 OT-223 sot 23 mark 2v darlington sot23 pnp

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N

    BEL 188 pnp TRANSISTOR characteristics

    Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
    Text: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMBTA64 PZTA64 OT-23 OT-223 BEL 188 pnp TRANSISTOR characteristics bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor

    BCW66G

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		PDF BCW66G 500mA. OT-23 BCW66G

    Untitled

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		PDF BCW66G 500mA. OT-23 150degrees BCW66G

    BCW66G

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		PDF BCW66G 500mA. OT-23 BCW66G

    Fairchild Semiconductor - Process

    Abstract: No abstract text available
    Text: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted


    Original     		PDF BCW66G 500mA. OT-23 150degrees BCW66G Fairchild Semiconductor - Process

    Untitled

    Abstract: No abstract text available
    Text: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		PDF MPSA05/MMBTA05 300mA. OT-23

    MMBTA05

    Abstract: MPSA05
    Text: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Collector 3. Base 1. Base 2. Emitter 3. Collector


    Original     		PDF MPSA05/MMBTA05 300mA. OT-23 MMBTA05 MPSA05

    Untitled

    Abstract: No abstract text available
    Text: MPSA05/MMBTA05 MPSA05/MMBTA05 PNP General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Collector 3. Base 1. Base 2. Emitter 3. Collector


    Original     		PDF MPSA05/MMBTA05 300mA. OT-23

    On semiconductor date Code

    Abstract: MPS A05 transistor transistor A05 Marking code mps A05 SOT MPS A05 MPS sot23-6 top marking A
    Text: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		PDF MPSA05/MMBTA05 300mA. OT-23 10mAtributor MPSA05 O-92-3 MPSA05RA MPSA05RA On semiconductor date Code MPS A05 transistor transistor A05 Marking code mps A05 SOT MPS A05 MPS sot23-6 top marking A

    MMBTA05

    Abstract: MPSA05
    Text: MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 1 Mark: 1H TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		PDF MPSA05/MMBTA05 300mA. OT-23 MMBTA05 MPSA05

    671DX

    Abstract: G671L293T73Uf 670Dx G671L 68HCXX 668Gx G670L263T71 G670 669ax
    Text: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „ Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages „ Fully Specified Over Temperature Available in Three Output Configurations Push-Pull RESET Output G670L


    Original     		PDF G670/G671 G670/G671 G671L 1000mm OT-23 OT-23 671DX G671L293T73Uf 670Dx 68HCXX 668Gx G670L263T71 G670 669ax

    668I

    Abstract: No abstract text available
    Text: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „Precision Monitoring of +3V, +3.3V, and +5V The G670/G671 are microprocessor µP supervisory circuits used to monitor the power supplies in µP and digital systems. They provide excellent circuit reliability


    Original     		PDF G670/G671 G670/G671 G670L) G670H) G671L) 1000mm 668I

    Untitled

    Abstract: No abstract text available
    Text: G670/G671 Global Mixed-mode Technology Inc. Microprocessor Reset IC Features General Description „ Precision Monitoring of +3V, +3.3V, and +5V Power-Supply Voltages „ Fully Specified Over Temperature Available in Three Output Configurations Push-Pull RESET Output G670L


    Original     		PDF G670/G671 G670/G671 G670L) G670H) G671L) OT-23 OT-23

    AAKW

    Abstract: AALN UTP025 UTP015
    Text: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.


    Original     		PDF MAX6505 MAX6508 MAX6505/MAX6506 MAX6506 MAX6508 AAKW AALN UTP025 UTP015

    AAKW

    Abstract: AAME MARK A5 SOT23-6 MAX6505 MAX6506 MAX6507 MAX6508 MAX6505UTP000 UTP01 5C SOT23-6
    Text: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches _Applications µP Temperature Monitoring in High-Speed Computers Temperature Control Features ♦ ±0.5°C typ Threshold Accuracy Over Full Temperature Range ♦ No External Components Required


    Original     		PDF MAX6505/MAX6507) MAX6506/MAX6508) MAX6507/MAX6508) MAX6505/MAX6506) OT23-6 MAX6505UT_ OT23-6 MAX6506UT_ MAX6505 MAX6508 AAKW AAME MARK A5 SOT23-6 MAX6506 MAX6507 MAX6508 MAX6505UTP000 UTP01 5C SOT23-6

    TRANSISTOR A64

    Abstract: FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64
    Text: S E M IC O N D U C T O R tm MPSA64 MMBTA64 TO-92 SOT-23 PZTA64 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Màximum Rdtinys


    OCR Scan     		PDF MPSA64 MMBTA64 PZTA64 OT-23 OT-223 TRANSISTOR A64 FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64

    BTA64

    Abstract: sot 23 mark 2v
    Text: S E M IC O N D U C T O R tm MPSA64 MMBTA64 SOT-23 Mark: 2V PZTA64 B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF MPSA64 MMBTA64 PZTA64 MPSA64 MMBTA64 OT-23 OT-223 BTA64 sot 23 mark 2v

    l5 transistor PNP

    Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
    Text: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high


    OCR Scan     		PDF MPSA64 MMBTA64 OT-23 PZTA64 OT-223 004G77S l5 transistor PNP PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64

    MMBF4119

    Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
    Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for


    OCR Scan     		PDF PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 OT-23 G1A/61C/61E S01130 MMBF4119 PN4119

    1GM sot-23 transistor

    Abstract: No abstract text available
    Text: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage


    OCR Scan     		PDF MMBTA06LT1 OT-23 950TPY 037TPY 550REF 022REF 1GM sot-23 transistor