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    SOT 223 FOOTPRINT Search Results

    SOT 223 FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 223 FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT108

    Abstract: MMFT108T1
    Text: MOTOROLA SEMICONDUCTOR ~ w TECHNICAL Order this document byMMH108T1/D DATA Field Effect ~ansistor MMFTI08TI N-Channel Enhancement-Mode Logic Level SOT-223 TMOS- 2,4 DRAIN 1 GATE @ CASE 318E+4, STVLE 3 SOT-223 ~0-261AA MAXIMUM RATINGS I Rating I Drain-t&SourceVoltage


    Original     		PDF byMMH108T1/D MMFTI08TI OT-223 0-261AA) MT108 602-2H609 108T1/D MT108 MMFT108T1

    N3NF06

    Abstract: No abstract text available
    Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description


    Original     		PDF STN3NF06 OT-223 OT-223 STN3NF06 N3NF06

    N3NF06

    Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
    Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description


    Original     		PDF STN3NF06 OT-223 N3NF06 st MARKING E4 JESD97 STN3NF06 N-3-NF

    2n603l

    Abstract: marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode
    Text: BSP603S2L Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 33 mΩ ID 5.2 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP603S2L SOT-223 Q67060-S7213 2N603L VPS05163


    Original     		PDF BSP603S2L OT-223 Q67060-S7213 VPS05163 2N603L 2n603l marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode

    2N615L

    Abstract: BSP615S2L VPS05163 55B5
    Text: BSP615S2L Preliminary data OptiMOS =Small-Signal-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 90 mΩ ID 2.8 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP615S2L SOT-223 Q67060-S7211 2N615L


    Original     		PDF BSP615S2L OT-223 Q67060-S7211 VPS05163 2N615L 2N615L BSP615S2L VPS05163 55B5

    SPN04N60S5

    Abstract: transistor smd marking ds sot-223 04n60s5 VPS05163
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 transistor smd marking ds sot-223 04n60s5 VPS05163

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 SPN04N60S5 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223

    Untitled

    Abstract: No abstract text available
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 RDS on 90 m ID 2.8 A V SOT 223 • Green Product (RoHS Compliant) • AEC Qualified Type Package Ordering Code Marking BSP615S2L SOT 223 On Request


    Original     		PDF BSP615S2L 2N615L

    Q62702-S654

    Abstract: BSP125 E6327 IS-012A
    Text: Rev. 1.0 SIPMOS Power-Transistor BSP125 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP125 SOT-223 Q62702-S654


    Original     		PDF BSP125 OT-223 Q62702-S654 E6327: Q62702-S654 BSP125 E6327 IS-012A

    BSP324

    Abstract: E6327 Q67000-S215
    Text: Rev. 1.0 SIPMOS  Power-Transistor BSP324 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 400 V 25 Ω 0.17 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP324 SOT-223 Q67000-S215


    Original     		PDF BSP324 OT-223 Q67000-S215 E6327: BSP324 E6327 Q67000-S215

    JESD97

    Abstract: N4NF03L STN4NF03L
    Text: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STN4NF03L OT-223 N4NF03L JESD97 N4NF03L STN4NF03L

    BSP171P

    Abstract: Q67041-S4019 BSP171
    Text: BSP171P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated SOT-223 Type Package Ordering Code Marking BSP 171 P SOT-223


    Original     		PDF BSP171P OT-223 Q67041-S4019 -20ous BSP171P Q67041-S4019 BSP171

    SPN04N60S5

    Abstract: SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223
    Text: SPN04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 SPN04N60S5 SMD TRANSISTOR MARKING 2c 04N60S5 VPS05163 transistor smd marking ds sot-223 720 TRANSISTOR smd sot-223

    Untitled

    Abstract: No abstract text available
    Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223


    Original     		PDF STN1NK60Z, STQ1NK60ZR-AP OT-223 STN1NK60Z OT-223 AM01476v1 DocID9509

    04N60S5

    Abstract: SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163
    Text: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A SOT-223 • Ultra low gate charge • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 Q67040-S4211 VPS05163 04N60S5 04N60S5 SPN04N60S5 720 TRANSISTOR smd sot-223 VPS05163

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    D028

    Abstract: BSP129 E6327 Q67000-S073
    Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 240 V R DS on ,max 6 Ω I DSS,min 0.05 A • dv /dt rated SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP129 SOT-223 Q67000-S073


    Original     		PDF BSP129 OT-223 Q67000-S073 E6327: D028 BSP129 E6327 Q67000-S073

    BSP135

    Abstract: Q62702-S655 D001A E6327
    Text: BSP135 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 600 V R DS on ,max 60 Ω I DSS,min 0.02 A • dv /dt rated SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP135 SOT-223 Q62702-S655


    Original     		PDF BSP135 OT-223 Q62702-S655 E6327: BSP135 Q62702-S655 D001A E6327

    BSP149

    Abstract: Q67000-S071 E6327 GS27 smd diode gs3
    Text: BSP149 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 200 V R DS on ,max 3.5 Ω I DSS,min 0.14 A • dv /dt rated SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP149 SOT-223 Q67000-S071


    Original     		PDF BSP149 OT-223 Q67000-S071 E6327: BSP149 Q67000-S071 E6327 GS27 smd diode gs3

    720 TRANSISTOR smd sot-223

    Abstract: SPN04N60S5
    Text: SPN04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in SOT 223 VDS 600 V RDS(on) 0.95 Ω ID 0.8 A • Ultra low gate charge SOT-223 • Extreme dv/dt rated 4 • Ultra low effective capacitances


    Original     		PDF SPN04N60S5 OT-223 VPS05163 Q67040-S4211 04N60S5 720 TRANSISTOR smd sot-223 SPN04N60S5

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L

    n1nf10

    Abstract: JESD97 STN1NF10
    Text: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature


    Original     		PDF STN1NF10 OT-223 N1NF10 n1nf10 JESD97 STN1NF10

    4nf03l

    Abstract: 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST
    Text: STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET II Power MOSFET Features • Type VDSS RDS on ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of


    Original     		PDF STN4NF03L OT-223 4NF03L 4nf03l 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


    OCR Scan     		PDF MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F