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    SOT 123F SCHOTTKY DIODES Search Results

    SOT 123F SCHOTTKY DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

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    IGBT 60A spice model

    Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
    Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		PDF September-2006 IGBT 60A spice model 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola