NEC A39A
Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Text: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES
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C10943XJ6V0IF00
IEI-635,
IEI-1213)
ED-7411
NEC A39A
NEC A39A 240
SOP28 330 mil land pattern
NEC A39A 8 PIN
mjh 106
120-PIN 282 185 01
smd TRANSISTOR code b6
ED-7500
transistor a39a
SIP 400B
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00011-7v0-E
MB85R256F
MB85R256F
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Untitled
Abstract: No abstract text available
Text: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL061/063 APPLICATIONS RELATED LITERATURE Codec function on telephone switch linecards FEATURES Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs
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Le58QL061/063
Le58QL02/021/031
Am79Q061/
SE-16970
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MB85R256FPF
Abstract: 8A10 MB85R256F Marking code M19
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00011-3v0-E
MB85R256F
MB85R256F
MB85R256FPF
8A10
Marking code M19
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00011-6v0-E
MB85R256F
MB85R256F
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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Original
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DS501-00011-6v0-E
MB85R256F
MB85R256F
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PDF
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Untitled
Abstract: No abstract text available
Text: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL061/063 APPLICATIONS RELATED LITERATURE Codec function on telephone switch linecards FEATURES Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs
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Le58QL061/063
Am79Q061/
SE-16970
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c9013
Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.
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R-118
c9013
84 pin PBGA
oscilloscope MTBF
TSMC retention memory
dc 8069
IS61C1024
IC Data-book
Q-16
car radio 14x20
TSOP 8638
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70241k
Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054
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R-118
70241k
d5611
61c256
ic 9022
61c64
RELIABILITY REPORT ISSI
vacuum tubes
CMS 2015
S/TRANSISTOR J 5804 EQUIVALENT
28F010P
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LE58QL063HVC
Abstract: Z-658
Text: Le58QL061/063 Quad Low Voltage Subscriber Line Audio-Processing Circuit VE580 Series APPLICATIONS RELATED LITERATURE Codec function on telephone switch line cards FEATURES 080753 Le58QL02/021/031 QLSLAC™ Data Sheet 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58QL061/063
VE580
Le58QL02/021/031
Le58QL061/063
LE58QL063HVC
Z-658
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le58ql063hvc
Abstract: CDBC C28 LE58QL063HV
Text: Le58QL061/063 Quad Low Voltage Subcriber Line Audio-Processing Circuit - Ve580 Series Data Sheet Features • Document ID#: 080754 Low-power, 3.3 V CMOS technology with 5 V tolerant digital inputs Version 8 June 2011 Ordering Information Package 1 Green
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Le58QL061/063
Ve580
Le79Q061/063
le58ql063hvc
CDBC C28
LE58QL063HV
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Untitled
Abstract: No abstract text available
Text: Le58QL061/063 Quad Low Voltage Subscriber Line Audio-Processing Circuit VE580 Series APPLICATIONS RELATED LITERATURE Codec function on telephone switch line cards FEATURES 080753 Le58QL02/021/031 QLSLAC™ Data Sheet 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58QL061/063
VE580
Le58QL02/021/031
Le58QL061/063
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LE58QL063HVC
Abstract: R1Z regulator LE792 7804 regulator EE transformer modem v.90 HX 711 CD11 CD21 CD23 CD24
Text: Le58QL061/063 Quad Low Voltage Subscriber Line Audio-Processing Circuit VE580 Series Voice Solution A APPLICATIONS RELATED LITERATURE Codec function on telephone switch line cards FEATURES 080753 Le58QL02/021/031 QLSLAC™ Data Sheet 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58QL061/063
VE580
Le79Q061/
LE58QL063HVC
R1Z regulator
LE792
7804 regulator
EE transformer modem v.90
HX 711
CD11
CD21
CD23
CD24
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LE58QL063HVC
Abstract: chn7 CD21 CD23 CD24 CD11 Le58QL061BVC LE58QL063HV Z2 018 9ah cbpd1
Text: Le58QL061/063 Quad Low Voltage Subscriber Line Audio-Processing Circuit VE580 Series APPLICATIONS RELATED LITERATURE Codec function on telephone switch line cards FEATURES 080753 Le58QL02/021/031 QLSLAC™ Data Sheet 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58QL061/063
VE580
Le79Q061/
LE58QL063HVC
chn7
CD21
CD23
CD24
CD11
Le58QL061BVC
LE58QL063HV
Z2 018 9ah
cbpd1
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chn7
Abstract: RF2A CD11 CD12 CD21 CD22 CD23 CD24 le57d11 cd242
Text: A D V A N C E D C O P Y Le58083 Low Voltage Subscriber Line Audio-Processing Circuit Octal SLAC Le58000 SLAC™ Family APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ 080753 Le58QL02/021/031 QLSLAC™ Data Sheet ■ 080754 Le58QL061/063 QLSLAC™ Data Sheet
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Le58083
Le58000
Le58QL02/021/031
Le58QL061/063
chn7
RF2A
CD11
CD12
CD21
CD22
CD23
CD24
le57d11
cd242
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Le58QL061VC
Abstract: Le58QL063VC c53 Optocouplers C110 C310 CD11 CD21 CD23 CD24 CD21CD
Text: Le58QL061/063 Quad Low Voltage Subscriber Line Audio-Processing Circuit QLSLAC Le58000 SLAC™Family APPLICATIONS RELATED LITERATURE n Codec function on telephone switch line cards n 080753 Le58QL02/021/031 QLSLAC™ Data Sheet n 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58QL061/063
Le58000
Le58QL02/021/031
Le79Q061/
Le58QL061VC
Le58QL063VC
c53 Optocouplers
C110
C310
CD11
CD21
CD23
CD24
CD21CD
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c612 mx
Abstract: M33 fuse CD11 CD12 CD21 CD22 CD23 CD24 mx c511 CDBC C28
Text: A D V A N C E D C O P Y Le58083 Low Voltage Subscriber Line Audio-processing Circuit VE580 Series APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ 080753 Le58QL02/021/031 QLSLAC™ Data Sheet ■ 080754 Le58QL061/063 QLSLAC™ Data Sheet
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Le58083
VE580
Le58QL02/021/031
Le58QL061/063
VE580
Le58083
c612 mx
M33 fuse
CD11
CD12
CD21
CD22
CD23
CD24
mx c511
CDBC C28
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Untitled
Abstract: No abstract text available
Text: A D V A N C E D C O P Y Le58083 Low Voltage Subscriber Line Audio-Processing Circuit Octal SLAC Le58000 SLAC™ Family APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ 080753 Le58QL02/021/031 QLSLAC™ Data Sheet ■ 080754 Le79Q061/063 QLSLAC™ Data Sheet
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Le58083
Le58000
Le58QL02/021/031
Le79Q061/063
Le58000
Le58083
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ATI Lead Free reflow soldering profile BGA
Abstract: CD11 CD12 CD21 CD22 CD23 CD24 cd212 isolation transformer v.90 M4B4
Text: Le58083 Low Voltage Subscriber Line Audio-processing Circuit VE580 Series APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ 080753 Le58QL02/021/031 QLSLAC™ Data Sheet ■ 080754 Le58QL061/063 QLSLAC™ Data Sheet ■ 080761 QSLAC™ to QLSLAC™ Design Conversion
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Le58083
VE580
Le58QL02/021/031
Le58QL061/063
VE580
ATI Lead Free reflow soldering profile BGA
CD11
CD12
CD21
CD22
CD23
CD24
cd212
isolation transformer v.90
M4B4
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PDF
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Le58QL063VC
Abstract: No abstract text available
Text: P R E L I M I N A R Y QLSLAC Quad Low Voltage Subscriber Line Audio-Processing Circuit Le58QL061/063 APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ ■ ■ ■ FEATURES ■ Low-power, 3.3 V CMOS technology with 5 V tolerant
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Le58QL061/063
Le58QL02/021/031
Am79Q02/021/031
Am79Q061/063
Am79Q061/
Le58QL063VC
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PDF
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ATI Lead Free reflow soldering profile BGA
Abstract: CD11 CD12 CD21 CD22 CD23 CD24
Text: Le58083 Low Voltage Subscriber Line Audio-processing Circuit VE580 Series A Voice Solution APPLICATIONS RELATED LITERATURE • Codec function on telephone switch line cards ■ 080753 Le58QL02/021/031 QLSLAC™ Data Sheet ■ 080754 Le58QL061/063 QLSLAC™ Data Sheet
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Le58083
VE580
Le58QL02/021/031
Le58QL061/063
VE580
ATI Lead Free reflow soldering profile BGA
CD11
CD12
CD21
CD22
CD23
CD24
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PDF
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PMC-1991635
Abstract: saturn ups OC192 hdlc framing
Text: POS-PHY LEVEL 4 INTERFACE SPECIFICATION PMC-1991635 ISSUE 6 SATURN 10 GIGABIT PACKET/CELL PHY INTERFACE POS-PHYTM LEVEL 4 A SATURN PACKET AND CELL INTERFACE SPECIFICATION FOR OC192 SONET/SDH AND 10 GIGABIT ETHERNET ISSUE 6: FEBRUARY 2001 PMC-Sierra, Inc. Page 1
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PMC-1991635
OC192
PMC-1991635
saturn ups
hdlc framing
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micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
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V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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