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    SOJ42-P-400-1.27 PACKAGE OUTLINE Search Results

    SOJ42-P-400-1.27 PACKAGE OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOJ42-P-400-1.27 PACKAGE OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd code marking wl5

    Abstract: Q67100-Q1188 BST60
    Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


    Original     		PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 smd code marking wl5 Q67100-Q1188 BST60

    Q67100-Q1192

    Abstract: WL3 MARKING BST60
    Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature


    Original     		PDF HYB3116165BSJ/BST HYB3118165BSJ/BST 16-Bit HYB3118165BSJ/BST-50) HYB3118165BSJ/BST-60) GPJ05853 HYB3116 165BSJ/BST P-SOJ-42 Q67100-Q1192 WL3 MARKING BST60

    faa11

    Abstract: 5118165 d lt 7210
    Text: SIEMENS 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 321005S/GS-50/-60 Advanced Inform ation • 1 048 576 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access tim e


    OCR Scan     		PDF 32-Bit 321005S/GS-50/-60 321005S/GS-50/-60 i-f1111111111111 faa11 5118165 d lt 7210

    Untitled

    Abstract: No abstract text available
    Text: SIE M EN S 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50


    OCR Scan     		PDF 16-Bit 5118160BSJ-50/-60 3118160BSJ-50/-60 HYB5118160 HYB3118160 3118160BSJ-50/-60 GPX05958

    SIEMENS BST

    Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


    OCR Scan     		PDF 16-Bit HYB5118165 HYB3118165 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 SIEMENS BST SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L