Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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ESD Considerations for SOI Switch Design
Abstract: No abstract text available
Text: ESD Considerations for SOI Switch Design Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Email: yuhyue.chen@skyworksinc.com, Tel: 949 231-3083 This paper proposes a solution that employs transistor
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Untitled
Abstract: No abstract text available
Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of
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Optimized CMOS-SOI Process for High Performance RF Switches
Abstract: No abstract text available
Text: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in
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Abstract: No abstract text available
Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna
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BRO378-12B
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Choosing the Right RF Switches for Smart Mobile Device Applications
Abstract: No abstract text available
Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than
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900mhz-1800mhz rf frequency amplifier circuit
Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.
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AN9315
HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3046
HFA3046/3096/3127/3128
800MHz
2500MHz)
10MHz
900mhz-1800mhz rf frequency amplifier circuit
PNP UHF transistor
HFA3046
uhf transistor amplifier
complementary npn-pnp
PNP transistor 263
NPN transistor mhz s-parameter
silicon bipolar transistor rf power amplifier
UHF pnp transistor
HFA3096
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rf transistors amplifier design and matching network
Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design
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ISL73096RH,
ISL73127RH,
ISL73128RH
ISL73096RH
ISL73096RH/ISL73127RH/
800MHz
2500MHz)
10MHz
600MHz
rf transistors amplifier design and matching network
silicon bipolar transistor low noise amplifier
bipolar transistor ghz s-parameter
intersil AN1503
PNP transistor 263
AN1503
ISL73096RH
ISL73127RH
6 "transistor arrays" ic
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Untitled
Abstract: No abstract text available
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords
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HFA3046,
HFA3096,
HFA3127,
HFA3128
AN9315
HFA30
HFA31
HFA3046/3096/3127/3128
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900mhz-1800mhz rf frequency amplifier circuit
Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.
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HFA3046,
HFA3096,
HFA3127,
HFA3128
AN9315
HFA3046
HFA3046/3096/3127/3128
800MHz
2500MHz)
10MHz
900mhz-1800mhz rf frequency amplifier circuit
uhf amplifier design Transistor
PNP Transistor Arrays Intersil
PNP transistor 263
HFA3046
HFA3096
HFA3127
SOI series shunt
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Q545
Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.
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HFA3046,
HFA3096,
HFA3127,
HFA3128
AN9315
HFA3046
HFA3046/3096/3127/3128
800MHz
2500MHz)
10MHz
Q545
SOI series shunt
rf transistors amplifier design and matching network
HFA3046
HFA3096
HFA3127
high gain PNP RF TRANSISTOR
TRANSISTOR noise figure measurements
amplifier TRANSISTOR 12 GHZ
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stacked transistor shunt switch
Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor
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rf mems switch spst
Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.
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AN-952,
com/090917cs
rf mems switch spst
SKY13317-373
Hittite RF Switch SOI
military switch
EDN handbook
rf3024
SKY13317-373LF
RF3023
RF3025
2SMES-01
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Untitled
Abstract: No abstract text available
Text: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices the MK3727D and MK3727C offer a wider
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MK3727
MK3727
MK3727S,
MK3727C
MK3727D.
MK3727D
MK3727S
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Untitled
Abstract: No abstract text available
Text: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider
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MK3727
MK3727
MK3727S,
MK3727C
MK3727D.
MK3727D
MK3727S
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sta 512
Abstract: No abstract text available
Text: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider
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MK3727
MK3727
MK3727S,
MK3727C
MK3727D.
MK3727D
MK3727S
sta 512
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Untitled
Abstract: No abstract text available
Text: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider
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MK3727
MK3727
MK3727S,
MK3727C
MK3727D.
MK3727D
MK3727S
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MAN05
Abstract: MK3727 MK3727C MK3727D MK3727DTR MK3727S MK3727SLFTR
Text: MK3727 LOW COST 24 TO 36 MHZ 3.3 VOLT VCXO Description The MK3727 series of devices include the original MK3727S, and the new MK3727C and MK3727D. The MK3727D and MK3727C are drop-in replacements for the MK3727S device. Compared to these earlier devices, the MK3727D and MK3727C offer a wider
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MK3727
MK3727
MK3727S,
MK3727C
MK3727D.
MK3727D
MK3727S
MAN05
MK3727DTR
MK3727SLFTR
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PE42480
Abstract: No abstract text available
Text: 2014-2015 High-Performance Analog Product Catalog Welcome to Peregrine Semiconductor Peregrine Semiconductor NASDAQ: PSMI , founder of RF SOI (silicon on insulator), is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding
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DOC-35227-4
PE42480
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D44C5
Abstract: No abstract text available
Text: , Una. J. Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 D45C5 Silicon PNP Power Transistors DESCRIPTION • • • • Low Saturation Voltage Good Linearity of hFE Fast Switching Speeds Complement to Type D44C5
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D45C5
D44C5
-50mA
-100mA
-20mA
D44C5
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Untitled
Abstract: No abstract text available
Text: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.
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CXA4420GC
CXA4420GC
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Untitled
Abstract: No abstract text available
Text: MOLDED NYLON INSULATING 11 T X T RoHS COMPLIANT BUSHING TERMINAL - GOLD PLATED SPRINGS WITH GOLD A L L O Y C ONTACTS ON R I N G S P R I N G S AN D S H U N T S P R I N G S WHEN SHUNTS - ARE BLANK PC USED - - SOLDER 0.078 PCS MOLDED INSULATING NYLON BUSHING
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3-25-1I
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mau aui
Abstract: No abstract text available
Text: NCR92C122 SYSTEM DESCRIPTION The NCR92C122 is divided into six primary interfaces: Control Interface, FIFO Interface, Network Statistics Interface, Media Interface, Clock Interface, and LED Interface. Figure 3 provides an overview of the signals associated with the
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NCR92C122
NCR92C122
mau aui
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Untitled
Abstract: No abstract text available
Text: NCR92C120 FUNCTIONAL DESCRIPTION The NCR92C120 functions as an Ethernet LAN controller M AC integrated with a M anchester Encoder/D ecoder (PLS), an A ttachm ent U nit Interface (A U I), and a 10B A SE-T transceiver (PM A). A n o n -ch ip crystal oscillator is also p ro
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NCR92C120
NCR92C120
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