CXA4403GC
Abstract: No abstract text available
Text: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features
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CXA4403GC
CXA4403GC
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Untitled
Abstract: No abstract text available
Text: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features
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CXA4403GC
CXA4403GC
CXA440
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Untitled
Abstract: No abstract text available
Text: SP3T SOI Antenna Switch for Diversity CXA2973GC Description CXA2973GC is a low power SP3T antenna switch for diversity switching applications. CXA2973GC has a 1.8V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.
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CXA2973GC
CXA2973GC
800MHz
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Untitled
Abstract: No abstract text available
Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.
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CXA4011GC
CXA4011GC
CXA4010
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"RF Switch"
Abstract: 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator
Text: 0275-000.qxp 5/15/07 12:29 PM Page 1 RF / Microwave Services HIGH PERFORMANCE SOI RF SWITCHES AND DIGITAL ATTENUATORS Short-Form Product Catalog 0275-000.qxp 5/15/07 12:29 PM Page 2 RF / Microwave Services Short-Form Product Catalog High Performance SOI CMOS RF Switches and Digital Attenuators
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HRF-SW1000
HRF-SW1001
HRF-SW1020
P61-0275-000-001
"RF Switch"
20 qfn 3x3
RF SWITCH
RF Switches
QFN 4X4
P6102
AT4510
Honeywell OR SenSym
rf 4*4 mm QFN
Digital Attenuator
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Untitled
Abstract: No abstract text available
Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.
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CXA2947GC
CXA2947
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RF3A
Abstract: No abstract text available
Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.
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CXA4410GC
CXA4410
RF3A
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CXA4
Abstract: No abstract text available
Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.
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CXA4410GC
CXA4410
CXA4
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Untitled
Abstract: No abstract text available
Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.
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CXA4011GC
CXA4011GC
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Untitled
Abstract: No abstract text available
Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.
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CXA2985GC
CXA2985GC
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Inselek
Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.
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Untitled
Abstract: No abstract text available
Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.
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CXA2947GC
CXA2947
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honeywell hx3000
Abstract: HX3000
Text: HIGH PERFORMANCE SOI-V GATE ARRAYS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened TM 0.30µm Leff RICMOS Silicon On Insulator (SOI-V) process Array Sizes to 1.0M Usable Gates 3.3V or 2.5V Core Operation
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HX3000
honeywell hx3000
HX3000
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Untitled
Abstract: No abstract text available
Text: Advanced Product Release Information HIP3 Variable Attenuator 0.80–1.00 GHz AV111-12 Features • +40 dBm IP3 Typical SOI ■ Low Loss 1 dB Typical C-8 SOI C-8 ■ Attenuation 30 dB Typical ■ Good VSWR <1.5:1 Typical ■ Low Phase Shift Description
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AV111-12
Control197
SK38531
AV10-12
2/00A
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CXA2985GC
Abstract: CXA2985 SOI RF switch CXA29
Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.
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CXA2985GC
CXA2985GC
CXA2985
SOI RF switch
CXA29
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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0.6 um cmos process
Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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Untitled
Abstract: No abstract text available
Text: HIP3 Variable Attenuator 1.7–2.0 GHz AV112-12 Features • Specified Attenuation: 17.5–25 dB SOI ■ Total Attenuation: 30 dB Typical C-8 SOI C-8 ■ Low Insertion Loss: < 1.5 dB ■ Low Distortion: +40 dBm Typical ■ Low Phase Shift and Delay Description
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AV112-12
AV112-12
3/02A
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honeywell hx3000
Abstract: 440K HX3000 HX306G
Text: HIGH PERFORMANCE SOI-V ASICS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened 0.30µm Leff RICMOSTM Silicon On Insulator (SOI-V) process ASICS to 2.0M Usable Gates 3.3V or 2.5V Core Operation Mixed Voltage I/O Power Supply (2.5V, 3.3V)
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HX3000
3x105
1x106
1x10-11
HX3000
honeywell hx3000
440K
HX306G
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Untitled
Abstract: No abstract text available
Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.
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CXA2984GC
CXA2984
CXA2984GC-T9
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Untitled
Abstract: No abstract text available
Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.
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CXA2984GC
CXA2984
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Untitled
Abstract: No abstract text available
Text: HTADC12 High Temperature 12-Bit A/D Converter over the full operating temperature range of -55°C to +225°C. The HTADC12 is fabricated on a high temperature SOI-IV Silicon On Insulator SOI process with very low power consumption. The input of the HTADC12 allows for easy interfacing to sensors
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HTADC12
12-Bit
N61-0979-000-000
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Untitled
Abstract: No abstract text available
Text: HIP3 Variable Attenuator 1.70–2.00 GHz AV102-12 Features • +50 dBm IP3 Typical SOI ■ Low Loss 1 dB Typical C-8 SOI C-8 ■ Attenuation 30 dB Typical ■ Good VSWR <1.5:1 Typical ■ Small SOIC-8 Package Description The AV102-12 is a current controlled variable attenuator
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AV102-12
6/99A
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