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    SOI 1998 SWITCH Search Results

    SOI 1998 SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    SOI 1998 SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair

    northrop

    Abstract: NGC3575 NGC3573 NGC3574 SOI 1998 Switch MIL-STD-883A Northrop Grumman 357498 soi switches
    Text: 3UHOLPLQDU\ NGC3573 / NGC3574 / NGC3575 Radiation Hardened CMOS Analog Switches Northrop Grumman Corporation April 1998 Features      NGC3573 D3 NC • CMOS analog switching allows rail to rail operation and low switch impedance NC • 40 V maximum operating voltage Nominal: ±15V


    Original     		PDF NGC3573 NGC3574 NGC3575 NGC3573 northrop NGC3575 SOI 1998 Switch MIL-STD-883A Northrop Grumman 357498 soi switches

    Untitled

    Abstract: No abstract text available
    Text: HIGH PERFORMANCE SOI/Cu SRAMs AND MEMORIES IN MICROPROCESSORS INVITED R. V. Joshi, S. Kang*, C. T. Chuang, G. Shahidi IBM Research Division, T. J. Watson Research Center, Yorktown Heights,NY 10598 * Aavid Thermalloy LLC, Concord, NH 03301 (rvjoshi@us.ibm.com, 914-945-1118)


    Original     		PDF

    Modeling of SOI FET for RF Switch Applications

    Abstract: No abstract text available
    Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is


    Original     		PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications

    E3081

    Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
    Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 jay.goetz@corp.honeywell.com Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be


    Original     		PDF Report-1997, E3081 HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS

    Choosing the Right RF Switches for Smart Mobile Device Applications

    Abstract: No abstract text available
    Text: November 2011 Choosing the Right RF Switches for Smart Mobile Device Applications By Skyworks Solutions, Inc. Abstract: Modern smart phones and tablet computers typically incorporate multiple wireless services at different frequency bands ranging from FM radio to LTE. At the same time, an increasing number of designs utilize more than


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RMO2D-2 Novel Silicon-on-Insulator SP5T Switch-LNA Front-end IC Enabling Concurrent Dual-band 256-QAM 802.11ac WLAN Radio Operations Chun-Wen Paul Huang, Joe Soricelli, Lui Lam, Mark Doherty, Phil Antognetti, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA


    Original     		PDF 256-QAM

    SiS 6215

    Abstract: 8025g sis7016 pci 6254 44PIN SiS7014
    Text: SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution SiS7014 Single Chip 100Base-TX/10Base-T Physical Layer Solution Preliminary Revision 1.0 January 18,1998 Silicon Integrated Systems Corp. This specification is subject to change without notice.


    Original     		PDF SiS7014 100Base-TX/10Base-T 100Base-TX/10Base-T 100Base-TX1 SiS 6215 8025g sis7016 pci 6254 44PIN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.


    OCR Scan     		PDF FL7KM-12A O-220FN 30ERATURE

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16KMA-4A HIGH-SPEED SWITCHING USE FS16KMA-4A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 1 • 10V DRIVE • V d s s . .200V • rDS ON (M AX). . 0.25Í2


    OCR Scan     		PDF FS16KMA-4A FS16KMA-4A O-22QFN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS12UMA-4A HIGH-SPEED SWITCHING USE FS12UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© © GATE © DRAIN ® SOURCE © DRAIN • 10V • V d s s .2 0 0 V


    OCR Scan     		PDF FS12UMA-4A O-220

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2045CTF, PBYR2045CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance


    OCR Scan     		PDF PBYR2045CTF, PBYR2045CTX PBYR2045CTF OT186 OT186A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20UMA-4A HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm X < Q ® © © ©G ATE © DRAIN ® SOURCE © DRAIN • 10V D R IV E • V d s s . . 2 0 0 V • rDS ON (M AX).


    OCR Scan     		PDF FS20UMA-4A O-220

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10KMA-4A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 TO-220FN APPLICATION Cs Sw itch for CRT D isplay m onitor, Sw itch mode power supply, etc. MAXIMUM RATINGS Symbol Tc = 2 5°C Ratings


    OCR Scan     		PDF FS10KMA-4A FS10KMA-4A O-22QFN

    SOT186A package

    Abstract: Tj-102
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR1545CTF, PBYR1545CTX series SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance


    OCR Scan     		PDF PBYR1545CTF, PBYR1545CTX PBYR1545CTF OT186 OT186A SOT186A package Tj-102

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • • • • • PBYR2545CTF, PBYR2545CTX SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance


    OCR Scan     		PDF PBYR2545CTF, PBYR2545CTX PBYR2545CTF OT186 PBYR2545CTX OT186A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F L 1 2 K M -1 2 A HIGH-SPEED SWITCHING USE FL12KM -12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 600V • V d s s • rD S O N ( M A X ) .


    OCR Scan     		PDF FL12KM O-220FN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16UMA-4A HIGH-SPEED SWITCHING USE FS16UMA-4A OUTLINE DRAWING Dimensions in mm X < ® Q ©© ©G ATE © D R A IN ® SOURCE © D R A IN • 10V • V d s s .2 0 0 V


    OCR Scan     		PDF FS16UMA-4A O-220

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F L 1 0 K M -1 2 A HIGH-SPEED SWITCHING USE FL10KM -12A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V


    OCR Scan     		PDF FL10KM O-220FN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20KMA-4A HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING D im e n s io n s in m m 10 ± 0 .3 • 10V • V d s s . 2 0 0 V •


    OCR Scan     		PDF FS20KMA-4A O-220FN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS12KMA-4A HIGH-SPEED SWITCHING USE FS12KMA-4A OUTLINE DRAWING D im ensions in mm 10 ±0.3 2.8 ±0.2 4 • 10V DRIVE • V . .200V • rDS ON (M A X ). .0.40Í2


    OCR Scan     		PDF FS12KMA-4A O-220FN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FL16KM-6A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 10V DRIVE . 300V • V • rDS ON ( M A X ) .


    OCR Scan     		PDF FL16KM-6A O-220FN

    TLP751

    Abstract: E67349 TLP750 VDE0884
    Text: TO SHIBA TLP751 TOSHIBA PHOTOCOUPLER G a A M s IRED +PHOTO IC TLP751 DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING PO W ER SUPPLY FEEDBACK CONTROL ANALOG SIGNAL ISOLATION The TOSHIBA TLP751 Consists of GaA£As high-output light


    OCR Scan     		PDF TLP751 TLP751 TLP750 E67349 VDE0884