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    SOD723 EQUIVALENT Search Results

    SOD723 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    SOD723 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTBHBT357H2CKS

    Abstract: SOT-723 LDTD123ELT1G LDTD123ELT3G sot723 INNER CARTON LABEL marking a sod723
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF LDTD123ELT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LTBHBT357H2CKS SOT-723 LDTD123ELT1G LDTD123ELT3G sot723 INNER CARTON LABEL marking a sod723

    SOT-723

    Abstract: LDTB114ELT3G sot723 LDTB114ELT1G 5M SOD-723 ON leshan INNER CARTON LABEL SOT 723
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF LDTB114ELT1G LDTB114ELT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner SOT-723 LDTB114ELT3G sot723 5M SOD-723 ON leshan INNER CARTON LABEL SOT 723

    transistor f52

    Abstract: LDTB123YLT1G 100MHZ LDTB123YLT3G
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors Pb-Free package is available FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the


    Original     		PDF LDTB123YLT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner transistor f52 LDTB123YLT1G 100MHZ LDTB123YLT3G

    LDTC143XLT1G

    Abstract: LDTC143XLT3G
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete


    Original     		PDF LDTC143XLT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LDTC143XLT1G LDTC143XLT3G

    Clamp3301D

    Abstract: VESD05-02V CDS3C30GTH GBLC05c cds3c05 CDS2C05GTA CDS4C12GTA cds1c05gth SRV05 gblc12c
    Text: CeraDiodes for ESD protection What are CeraDiodes? 1. 2. 3. CeraDiodes are ceramic semiconductor components optimized for ESD protection of data-, audio- and video lines e.g. USB, IEEE 1394, Ethernet, HDMI, and Composite , interfaces, ICs and I/O ports in electronic devices.


    Original     		PDF PSMS05 PSMS12 ESDA05C-4 ESDA05C-5 Clamp3301D VESD05-02V CDS3C30GTH GBLC05c cds3c05 CDS2C05GTA CDS4C12GTA cds1c05gth SRV05 gblc12c

    MARKING e SOD-723

    Abstract: N sod723
    Text: RB520G-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-723 • Low VF drop • Low Reverse Current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB520G-30 OD-723 OD-723 J-STD-020D 2002/95/EC Stor2009, KSHR41 RB520G-30 MARKING e SOD-723 N sod723

    Untitled

    Abstract: No abstract text available
    Text: RB751G-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.03 Ampere FEATURES SOD-723 • Extremely low VF drop • Low inductance SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB751G-40 OD-723 OD-723 J-STD-020D 2002/95/EC May-2009, KSHR50 RB751G-40

    BAP63-01

    Abstract: BAP64-03 bap50-05 1SV308 replacement BAP64 BAP64-06W Diode RN731V BAP50-04 HSMP-3893 BAP70-02 equivalent
    Text: Philips Semiconductors PIN diodes designed for RF applications up to 3 GHz Philips Semiconductors’ PIN diodes are designed for RF applications up to 3 GHz. Supplied in highly compact packaging, they allow for significant board-size reduction and hence smaller, lighter mobile


    Original     		PDF

    sod-723 marking b

    Abstract: marking a sod723
    Text: 1SS400G SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere SOD-723 FEATURES • Fast switching speed • Low reverse leakage current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case material: “Green” molding compound, UL


    Original     		PDF 1SS400G OD-723 OD-723 J-STD-020D 2002/95/EC 100mA 1SS400G Jun-2009, KSYR15 sod-723 marking b marking a sod723

    J-STD-020D

    Abstract: RB521G-30
    Text: RB521G-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-723 • Low VF drop • Low Reverse Current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB521G-30 OD-723 OD-723 J-STD-020D 2002/95/EC J-STD-020D RB521G-30

    N sod723

    Abstract: No abstract text available
    Text: RB521G-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-723 • Low VF drop • Low Reverse Current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB521G-30 OD-723 OD-723 J-STD-020D 2002/95/EC May-2009, KSHR43 RB521G-30 N sod723

    SC-75

    Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
    Text: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit


    Original     		PDF L2SK3019LT1G 100mA) 3000/Tape L2SK3019LT3G 000/Tape 195mm 150mm 3000PCS/Reel SC-75 sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019

    smd marking CA

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE 24 ah smd smd diode fr TWD4148-400WU smd diode code CP smd diode sod723
    Text: Two Terminals SMD Switching Diode TWD4148-400WU Two Terminals SMD Switching Diode Features • • • • Extremely fast reverse recovery time to reduce switching losses Very low capacitance for reduced insertion losses Reverse voltage rating of 80V RoHS Compliant


    Original     		PDF TWD4148-400WU OD-723 OD-723, MIL-STD-750, smd marking CA marking CODE R SMD DIODE SMD MARKING CODE 24 ah smd smd diode fr TWD4148-400WU smd diode code CP smd diode sod723

    1SS400G

    Abstract: J-STD-020D
    Text: 1SS400G SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere SOD-723 FEATURES • Fast switching speed • Low reverse leakage current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case material: “Green” molding compound, UL


    Original     		PDF 1SS400G OD-723 OD-723 J-STD-020D 2002/95/EC 1SS400G J-STD-020D

    J-STD-020D

    Abstract: RB520G-30
    Text: RB520G-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-723 • Low VF drop • Low Reverse Current SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB520G-30 OD-723 OD-723 J-STD-020D 2002/95/EC J-STD-020D RB520G-30

    J-STD-020D

    Abstract: RB751G-40
    Text: RB751G-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.03 Ampere FEATURES SOD-723 • Extremely low VF drop • Low inductance SOD-723 MECHANICAL DATA • Case: SOD-723 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF RB751G-40 OD-723 OD-723 J-STD-020D 2002/95/EC J-STD-020D RB751G-40

    BAT34

    Abstract: sc70 marking JB CH551H-30 CH500H-40 CH501H-40 3m 76 -5002 sc CH511H-30 ch521G marking Z1 sot mg sot-143
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Maximum Peak Average Forward Peak Reverse Rectified Surge Current Voltage Current @ 1S PRV IO IFM Surge VPK mAAV APK Maximum Reverse Current @ 25°C TA IR uAdc VR V 2 0.1 2 0.2


    Original     		PDF SC-76 SC-70 SC-59 OT-23 BAT34 sc70 marking JB CH551H-30 CH500H-40 CH501H-40 3m 76 -5002 sc CH511H-30 ch521G marking Z1 sot mg sot-143

    Diode A3X

    Abstract: SOT-23 MARK A2.X lt1 switch LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G LMBD2836
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE z We declare that the material of product compliance with RoHS requirements. LMBD2835LT1G LMBD2836LT1G ORDERING INFORMATION Device Marking Shipping LMBD2835LT1G A3X 3000/Tape&Reel LMBD2835LT3G


    Original     		PDF LMBD2835LT1G LMBD2836LT1G 3000/Tape LMBD2835LT3G 10000/Tape LMBD2836LT3G Diode A3X SOT-23 MARK A2.X lt1 switch LMBD2835LT1 LMBD2835LT1G LMBD2835LT3G LMBD2836LT1 LMBD2836LT1G LMBD2836LT3G LMBD2836

    LBAS21HT1G

    Abstract: 47701
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 Ordering Information Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G


    Original     		PDF LBAS21HT1G LBAS21HT3G 3000/Tape 10000/Tape 195mm 150mm 3000PCS/Reel 8000PCS/Reel LBAS21HT1G 47701

    transistor 5BM

    Abstract: 5bm Marking
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Pb-Free package is available LMBD6100LT1G ANODE 1 3 CATHODE 2 ANODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value


    Original     		PDF LMBD6100LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner transistor 5BM 5bm Marking

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CWT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


    Original     		PDF LBAT54CWT1G OT-323 3000/Tape LBAT54CWT3G 10000/Tape 195mm 150mm 3000PCS/Reel

    mark a7 sot23 DIODE

    Abstract: LBAV99LT1G LBAV99LT3G mark a7 sot23
    Text: LESHAN RADIO COMPANY, LTD. LBAV99LT1G Dual Series Switching Diode 3 • We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7


    Original     		PDF LBAV99LT1G LBAV99LT3G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) mark a7 sot23 DIODE LBAV99LT1G LBAV99LT3G mark a7 sot23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS TA = 25°C 1 Rating Symbol Max Unit Reverse Voltage Forward Current


    Original     		PDF LBAV70LT1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner

    CDS2C05GTA

    Abstract: CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723
    Text: EPCOS Sample Kit 2007 fffll CeraDiode for ESD Protection w w w .e p c o s .c o m W hat is a CeraDiode? • A CeraDiode is a ceramic component for the ESD protection of data, audio and video lines, ICs and I/O ports in electronic devices. ■ A CeraDiode is a cost effective alternative to semiconductor protection devices


    OCR Scan     		PDF CDS2C15GTH OD-723 CDS2C16GTH CDS3C16GTH OD-523 CDS3C30GTH CDS4C16GTH OD-323 CDS2C05GTA CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723