MARKING 43W
Abstract: sod-123 marking L2 BAT42W BAT43W continental SOD123
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT42W / BAT43W SOD-123 PLASTIC PCAKAGE Marking Codes: BAT42W= L2 with cathode band BAT43W= L3 with cathode band These Diodes Feature Very Low Turn-on Voltage and Fast Switching
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BAT42W
BAT43W
OD-123
BAT42W=
BAT43W=
C-120
Rev020310E
MARKING 43W
sod-123 marking L2
BAT43W
continental SOD123
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT42W / BAT43W SOD-123 PLASTIC PCAKAGE Marking Codes: BAT42W= L2 with cathode band BAT43W= L3 with cathode band These Diodes Feature Very Low Turn-on Voltage and Fast Switching
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BAT42W
BAT43W
OD-123
BAT42W=
BAT43W=
C-120
Rev020310E
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3PHA 20
Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は，次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様
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TYPE/SOD-123
10DDA
EP05DA
EP05DA40
10JDA
10EDA
10EDB
EC10DS
3PHA 20
3PFB 60
3PHA
3PRA 20
CL6B030
3PRA 60
EP10QY04
EP10HY
marking code s4 SMc
3pra
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SOD-123LF
Abstract: MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
SOD-123LF
MBR120VLSFT1
MBR120VLSFT1G
MBR120VLSFT3
MBR120VLSFT3G
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MBR120
Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
r14525
MBR120LSFT1/D
MBR120
SOD123FL
MBR120LSFT1
MBR120LSFT3
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SOD-123LF
Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
SOD-123LF
MBR120LSFT1
MBR120LSFT1G
MBR120LSFT3
MBR120LSFT3G
SOD-123FL
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L2ED
Abstract: MBR120ESFT1 MBR120ESFT3
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
r14525
MBR120ESFT1/D
L2ED
MBR120ESFT1
MBR120ESFT3
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NRVB2H100SFT3G
Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR2H100SFT3G,
NRVB2H100SFT3G
OD-123FL
MBR2H100SF/D
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
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Untitled
Abstract: No abstract text available
Text: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR2H100SFT3G,
NRVB2H100SFT3G
123FL
MBR2H100SF/D
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Untitled
Abstract: No abstract text available
Text: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR2H100SFT3G,
NRVB2H100SFT3G
123FL
MBR2H100SF/D
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Untitled
Abstract: No abstract text available
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
OD-123
38x38
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Untitled
Abstract: No abstract text available
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
38x38
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Untitled
Abstract: No abstract text available
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
38x38
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Untitled
Abstract: No abstract text available
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
MBR120VLSFT1/D
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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Untitled
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
MBR120ESFT1/D
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MBR120LSFT1
Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
MBR120LSFT1/D
MBR120LSFT1
MBR120LSFT1G
MBR120LSFT3
MBR120LSFT3G
Diode SOd-123 marking cu
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Untitled
Abstract: No abstract text available
Text: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESF,
NRVB120ESF
OD-123
MBR120ESFT1/D
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MBR120
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
OD-123
MBR120ESFT1/D
MBR120
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sod marking L2E
Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
OD-123
MBR120ESFT1/D
sod marking L2E
MBR120ESFT1
MBR120ESFT1G
MBR120ESFT3
MBR120ESFT3G
MBR120
MBR120ESF
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Untitled
Abstract: No abstract text available
Text: MBR120LSF, NRVB120LSF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSF,
NRVB120LSF
MBR120LSFT1/D
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Untitled
Abstract: No abstract text available
Text: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120LSFT1G,
NRVB120LSFT1G,
MBR120LSFT3G
MBR120LSFT1/D
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MBR120
Abstract: L2L SOD-123FL
Text: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120LSFT1G,
NRVB120LSFT1G,
MBR120LSFT3G
OD-123
MBR120LSFT1/D
MBR120
L2L SOD-123FL
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C SOD-123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values
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BB619C
OD-123
Q62702-B683
fl235hOS
j2/Cj25
/CT28
023Sfc
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