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    smd transistor A1 HB

    Abstract: LM5113 WSON 10 DPR0010A Texas Instruments GaN
    Text: LM5113 www.ti.com SNVS725E – JUNE 2011 – REVISED JANUARY 2012 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 • 2 • • • • • • Independent high-side and low-side TTL logic inputs 1.2A/5A peak source/sink current


    Original     		PDF LM5113 SNVS725E LM5113 100VDC smd transistor A1 HB WSON 10 DPR0010A Texas Instruments GaN

    smd transistor A1 HB

    Abstract: omap hs smd driver fets
    Text: LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side


    Original     		PDF LM5113 smd transistor A1 HB omap hs smd driver fets